H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description ■ H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. ■ ■ ■ ■ lead spacing H11AV1AM and H11AV2AM feature 0.4" input-output lead spacing UL recognized (File #E90700, Vol. 2) VDE recognized (File #102497) Add option V (e.g., H11AV1AVM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Schematic ANODE 1 CATHODE 2 Package Outlines 6 BASE 5 COLLECTOR H11AV1SM, H11AV2SM N/C 3 4 EMITTER H11AV1M, H11AV2M H11AV1AM, H11AV2AM ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers September 2009 Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL PD Wave Solder Temperature (see page 8 for reflow solder profiles) Total Device Power Dissipation @ TA = 25°C Derate above 25°C 260 for 10 sec °C 250 mW 2.94 mW/°C EMITTER IF DC / Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V PD LED Power Dissipation @ TA = 25°C 120 mW 1.41 mW/°C Derate above 25°C DETECTOR VCEO Collector-Emitter Voltage 70 V VCBO Collector-Base Voltage 70 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C Derate above 25°C ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 150 mW 1.76 mW/°C www.fairchildsemi.com 2 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Unit 0.8 1.18 1.5 V EMITTER VF Input Forward Voltage (IF = 10mA) Reverse Leakage Current IR TA = 25°C TA = -55°C 0.9 1.28 1.7 TA = 100°C 0.7 1.05 1.4 VR = 6.0V 10 µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 70 100 V BVCBO Collector-Base Breakdown Voltage IC = 100µA, IF = 0 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100µA, IF = 0 7 10 V ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 ICBO Collector-Base Dark Current VCB = 10V CCE Capacitance VCE = 0V, f = 1MHz 1 50 nA 0.5 nA 8 pF Transfer Characteristics Symbol Parameter Test Conditions Device Min. H11AV1M H11AV1AM 100 H11AV2M H11AV2AM 50 Typ.* Max. Unit 300 % DC CHARACTERISTIC CTR Current Transfer Ratio, Collector to Emitter VCE (SAT) Collector-Emitter Saturation Voltage IF = 10mA, VCE = 10V IC = 2mA, IF = 20mA All 0.4 V AC CHARACTERISTIC TON Non-Saturated Turn-on Time IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) All 15 µs TON Non Saturated Turn-off Time IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) All 15 µs Isolation Characteristics Symbol Parameters Test Conditions VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. CISO Isolation Capacitance VI-O = 0V, f = 1MHz RISO Isolation Resistance VI-O = 500 VDC Min. Typ.* Max. 7500 VAC(pk) 0.2 1011 Units 2 pF Ω *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 3 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 4 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Safety and Insulation Ratings Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized CTR vs. Forward Current 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF – FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0V TA = 25°C Normalized to IF = 10mA 1.0 0.8 0.6 0.4 1.2 TA = 100°C 1.1 0.2 1.0 0.0 1 10 100 0 2 4 IF – LED FORWARD CURRENT (mA) 8 10 12 14 16 18 20 Fig. 4 CTR vs. RBE (Unsaturated) Fig. 3 Normalized CTR vs. Ambient Temperature 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.4 1.2 IF = 5mA NORMALIZED CTR 6 IF – FORWARD CURRENT (mA) 1.0 IF = 10mA 0.8 0.6 IF = 20mA 0.4 Normalized to IF = 10mA TA = 25°C 0.2 -60 -40 -20 0 20 40 60 80 0.9 IF = 20mA 0.8 IF = 10mA 0.7 IF = 5mA 0.6 0.5 0.4 0.3 0.2 VCE = 5.0V 0.1 0.0 10 100 100 1000 RBE – BASE RESISTANCE (kΩ) TA – AMBIENT TEMPERATURE (°C) Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 5 CTR vs. RBE (Saturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 0.9 IF = 20mA VCE = 0.3 V 0.8 IF = 5mA 0.7 0.6 0.5 IF = 10mA 0.4 0.3 0.2 0.1 0.0 10 100 1000 RBE- BASE RESISTANCE (kΩ) 100 TA = 25˚C 10 1 IF = 2.5mA 0.1 IF = 20mA 0.01 IF = 5mA 0.001 0.01 IF = 10mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 5 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Typical Performance Curves Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (µs) IF = 10 mA VCC = 10 V TA = 25°C 100 Toff 10 Tf Ton Tr 1 0.1 0.1 1 10 R – LOAD RESISTOR (kΩ) VCC = 10V IC = 2mA RL = 100Ω 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 100 100 1000 10000 100000 RBE – BASE RESISTANCE (k Ω) Fig. 10 Dark Current vs. Ambient Temperature 10000 Fig. 9 Normalized toff vs. RBE ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10V IC = 2mA RL = 100Ω 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100 10 1 0.1 0.01 0.001 100000 VCE = 10 V TA = 25°C 1000 0 20 RBE – BASE RESISTANCE (k Ω) 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) WAVE FORMS TEST CIRCUIT VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 11. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 6 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Typical Performance Curves (Continued) Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 7 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11AV1M S H11AV1SM SR2 H11AV1SR2M T H11AV1TM 0.4" Lead Spacing V H11AV1VM VDE 0884 TV H11AV1TVM VDE 0884, 0.4" Lead Spacing SV H11AV1SVM VDE 0884, Surface Mount SR2V H11AV1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11AV1 2 X YY Q 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘3’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 8 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Note: All dimensions are in millimeters. Reflow Soldering Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 9 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers Tape Dimensions Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com 10 H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.