RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics (trr < 40ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <40ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. • Avalanche Energy Rated Formerly developmental type TA49063. • Power Switching Circuits Applications • Switching Power Supplies • General Purpose Ordering Information PART NUMBER • Planar Construction PACKAGE BRAND RHRP3040 TO-220AC RHRP3040 RHRP3060 TO-220AC RHRP3060 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP3040 RHRP3060 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400 600 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 400 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 400 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 120oC) 30 30 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 70 70 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 325 325 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 125 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 -65 to 175 oC ©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B RHRP3040, RHRP3060 Electrical Specifications TC = 25oC, Unless Otherwise Specified RHRP3040 SYMBOL MIN TYP MAX MIN TYP MAX UNITS IF = 30A - - 2.1 - - 2.1 V IF = 30A, TC = 150oC - - 1.7 - - 1.7 V VR = 400V - - 250 - - - µA VR = 600V - - - - - 250 µA VR = 400V, TC = 150oC - - 1.0 - - - mA VR = 600V, TC = 150oC - - - - - 1.0 mA IF = 1A, dIF/dt = 200A/µs - - 40 - - 40 ns IF = 30A, dIF/dt = 200A/µs - - 45 - - 45 ns ta IF = 30A, dIF/dt = 200A/µs - 22 - - 22 - ns tb IF = 30A, dIF/dt = 200A/µs - 18 - - 18 - ns QRR IF = 30A, dIF/dt = 200A/µs - 100 - - 100 - nC VR = 10V, IF = 0A - 85 - - 85 - pF 1.2 oC/W VF IR trr CJ TEST CONDITION RHRP3060 RθJC - - 1.2 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current . trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 2000 300 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 175oC 100 100oC 25oC 175oC 10 100 100oC 10 1 0.1 25oC 0.01 1 0 1 2 3 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 4 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP3040, RHRP3060 Rev. B RHRP3040, RHRP3060 Typical Performance Curves (Continued) 50 100 40 30 trr 20 ta 10 tb TC = 100oC, dIF/dt = 200A/µs 80 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 200A/µs trr 60 40 ta 20 0 tb 0 1 10 30 10 IF , FORWARD CURRENT (A) 1 IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 150 TC = 175oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 125 100 trr 75 ta 50 tb 25 0 10 1 30 30 25 DC 20 SQ. WAVE 15 10 5 0 100 75 30 125 150 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 150 125 100 75 50 25 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B RHRP3040, RHRP3060 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRP3040, RHRP3060 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4