Motion-SPM FSBF10CH60BTL TM Smart Power Module Features General Description • UL Certified No.E209204(SPM27-JB package) It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and short-circuit protection. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. • 600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built in bootstrap diode • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Isolation rating of 2500Vrms/min. Applications • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives • Home appliances applications like air conditioner and washing machine Top View Bottom View 44mm 26.8mm Figure 1. ©2007 Fairchild Semiconductor Corporation FSBF10CH60BTL Rev. C 1 www.fairchildsemi.com FSBF10CH60BTL Smart Power Module December 2007 FSBF10CH60BTL Smart Power Module Integrated Power Functions • 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 12 and 13. • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to UV (Low-side supply) and SC faults • Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View Figure 2. 2 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-side U Phase 4 IN(VL) Signal Input for Low-side V Phase 5 IN(WL) Signal Input for Low-side W Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Time Selection 8 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input 9 IN(UH) Signal Input for High-side U Phase 10 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-side Bias Voltage for U Phase IGBT Driving 12 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving 13 IN(VH) Signal Input for High-side V Phase 14 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving 16 VS(V) 17 IN(WH) Signal Input for High-side W Phase 18 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-side Bias Voltage for W Phase IGBT Driving 20 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving 21 NU Negative DC–Link Input for U Phase 22 NV Negative DC–Link Input for V Phase 23 NW Negative DC–Link Input for W Phase 24 U Output for U Phase 25 V Output for V Phase 26 W Output for W Phase 27 P Positive DC–Link Input 3 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Internal Equivalent Circuit and Input/Output Pins (19) VB(W) (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (14) VCC(H) (13) IN(VH) (16) VS(V) (11) VB(U) (10) VCC(H) (9) IN(UH) (12) VS(U) (8) CSC (7) CFOD (6) VFO (5) IN(WL) (4) IN(VL) (3) IN(UL) P (27) VB VCC COM IN OUT VS W (26) VB VCC COM IN OUT VS V (25) VB VCC COM IN OUT VS U (24) C(SC) OUT(WL) C(FOD) NW (23) VFO IN(WL) OUT(VL) IN(VL) NV (22) IN(UL) (2) COM COM (1) VCC(L) VCC OUT(UL) VSL NU (21) Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT. Figure 3. 4 FSBF10CH60BTL Rev. C www.fairchildsemi.com Unless Otherwise Specified) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P- NU, NV, NW Supply Voltage (Surge) Applied between P- NU, NV, NW Rating Units 450 V Collector-emitter Voltage 500 V 600 V ± IC Each IGBT Collector Current TC = 25°C 10 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 20 A PC Collector Dissipation TJ(Power chips) Operating Junction Temperature TC = 25°C per One Chip (Note 1) 20 W -40 ~ 150 °C Rating Units Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 125°C). Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3~17 V VFO Fault Output Supply Voltage Applied between VFO - COM IFO Fault Output Current Sink Current at VFO Pin VSC Current Sensing Input Voltage Applied between CSC - COM TJ(Driver IC) Operating Junction Temperature -0.3~VCC+0.3 V 5 mA -0.3~VCC+0.3 V -40 ~ 150 °C Rating Units 600 V 0.5 A Bootstrap Diode Part Symbol VRRM Parameter Conditions Maximum Repetitive Reverse Voltage IF Forward Current TC = 25°C IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width TJ Operating Junction Temperature 2 A -40 ~ 150 °C Conditions Rating Units Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V, TJ = 150°C, Non-repetitive, less than 2μs 400 V Module Case Operation Temperature -40°C≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C -40 ~ 150 °C 2500 Vrms Total System Symbol VPN(PROT) TC Parameter TSTG Storage Temperature VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance Conditions Min. Typ. Max. Units Inverter IGBT part (per 1/6 module) - - 6.2 °C/W Inverter FWD part (per 1/6 module) - - 6.5 °C/W Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. 5 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol Parameter VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V FWD Forward Voltage VIN = 0V Switching Times VPN = 300V, VCC = VBS = 15V IC = 10A VIN = 0V ↔ 5V, Inductive Load (Note 3) VF HS tON tC(ON) tOFF Conditions Min. Typ. Max. Units IC = 10A, TJ = 25°C - - 2.2 V IF = 10A, TJ = 25°C - - 2.6 V - 0.75 - μs - 0.15 - μs - 0.50 - μs - 0.15 - μs tC(OFF) - 0.10 - μs - 0.50 - μs - 0.25 - μs - 0.50 - μs tC(OFF) - 0.15 - μs trr - 0.10 - μs - - 1 mA trr LS VPN = 300V, VCC = VBS = 15V IC = 10A VIN = 0V ↔ 5V, Inductive Load (Note 3) tON tC(ON) tOFF Collector-Emitter Leakage Current ICES VCE = VCES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol IQCCL Parameter Conditions Quiescent VCC Supply Current IQCCH Min. Typ. Max. Units VCC = 15V IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA VCC = 15V IN(UH, VH, WH) = 0V VCC(H) - COM - - 600 μA VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) - - 500 μA IQBS Quiescent VBS Supply Current VBS = 15V IN(UH, VH, WH) = 0V VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V VFOL 0.45 0.5 0.55 V TSD Over-temperature tion protec- Temperature at LVIC - 160 - °C ΔTSD Over-temperature tion hysterisis protec- Temperature at LVIC - 5 - °C UVCCD Supply Circuit UnderVoltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.4 V 10 11 12 V VSC(ref) UVCCR Short Circuit Trip Level VCC = 15V (Note 4) Detection Level UVBSD Reset Level 10.5 11.5 12.5 V tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage - - V OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM 2.8 VIN(OFF) - - 0.8 V UVBSR Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] 6 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) FSBF10CH60BTL Smart Power Module 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition Switching Loss (Typical) SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT SWITCHING LOSS(ON) VS. COLLECTOR CURRENT 600 350 SWITCHING LOSS, ESW(ON) [uJ] 500 450 400 SWITCHING LOSS, ESW(OFF) [uJ] VCE=300V VCC=15V VIN=5V TJ=25℃ TJ=150℃ 550 350 300 250 200 150 100 VCE=300V VCC=15V VIN=5V TJ=25℃ TJ=150℃ 300 250 200 150 100 50 50 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 COLLECTOR CURRENT, Ic [AMPERES] 1 2 3 4 5 6 7 8 9 10 11 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics 7 FSBF10CH60BTL Rev. C www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max. Units VF Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns Built in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 TC=25℃ 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Note: 6. Built in bootstrap diode includes around 15Ω resistance characteristic. Figure 6. Built in Bootstrap Diode Characteristics Recommended Operating Conditions Symbol Parameter Conditions Value Min. Typ. Max. Units VPN Supply Voltage Applied between P - NU, NV, NW - 300 400 V VCC Control Supply Voltage Applied between VCC(H), VCC(L)- COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15 18.5 V dVCC/dt, dVBS/dt Control supply variation -1 - 1 V/μs tdead Blanking Time for Preventing For Each Input Signal Arm-short 1.5 - - μs fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including surge voltage) -4 4 V 8 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Bootstrap Diode Part Parameter Mounting Torque Limits Conditions Mounting Screw: - M3 Device Flatness Recommended 0.62N•m Units Min. Typ. Max. 0.51 0.62 1.00 N•m 0 - +120 μm - 15.4 - g Note Figure 7 Weight (+) (+) Figure 7. Flatness Measurement Position Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FSBF10CH60BTL FSBF10CH60BTL SPM27-JB - - 10 9 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Mechanical Characteristics and Ratings FSBF10CH60BTL Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 8. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Figure 9. Under-Voltage Protection (High-side) 10 FSBF10CH60BTL Rev. C www.fairchildsemi.com c6 Protection circuit state SET Internal IGBT Gate-Emitter Voltage FSBF10CH60BTL Smart Power Module Lower arms control input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 10. Short-Circuit Current Protection (Low-side Operation only) 11 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module 5V-Line SPM RPF=4.7㏀ 100Ω IN(UH) , IN(VH) , IN(WH) 100Ω CPU IN (UL) , IN (VL) , IN(WL) 100Ω 1nF VFO 1nF CPF= 1nF 1nF COM Note: 1) RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS or LSTTL outputs. Figure 11. Recommended CPU I/O Interface Circuit These Values depend on PWM Control Algorithm One-Leg Diagram of SPM P 15V-Line 22uF 0.1uF Vcc VB IN HO COM VS Inverter Output Vcc 1000uF 1uF IN OUT COM VSL N Note: 1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible. Figure 12. Recommended Bootstrap Operation Circuit and Parameters 12 FSBF10CH60BTL Rev. C www.fairchildsemi.com (19) V B(W ) (18) V CC(H) RS C BS Gating W H C BSC (17) IN (W H) (20) V S(W ) C PS (15) V B(V) (14) V CC(H) RS C BS Gating VH C BSC VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) (16) V S(V) C PS C P U (13) IN (VH) P (27) VB (11) V B(U) RS C BS Gating UH C BSC C PS VB (10) V CC(H) VCC (9) IN (UH) COM IN (12) V S(U) M C DCS OUT VS Vdc U (24) RF R PF (8) C SC C SC (7) C FOD RS C FOD Fault RS (5) IN (W L) RS (4) IN (VL) RS (3) IN (UL) Gating W L Gating VL Gating UL (6) V FO C(SC) OUT(W L) C(FOD) N W (23) R SW VFO IN(W L) OUT(VL) IN(VL) N V (22) R SV IN(UL) (2) COM C BPF C PS C C PS PS COM C PF (1) V CC(L) C SP15 OUT(UL) VCC V SL N U (21) R SU C SPC15 Input Signal for Short-Circuit Protection R FW W-Phase Current V-Phase Current U-Phase Current R FV R FU C FW C FV C FU Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure11. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6) Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100Ω , CPS=1nF) 7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2μs. 9) Each capacitor should be mounted as close to the pins of the SPM as possible. 10) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22μF between the P&GND pins is recommended. 11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible. Figure 13. Typical Application Circuit 13 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module 5V line 15V line FSBF10CH60BTL Smart Power Module Detailed Package Outline Drawings 14 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Detailed Package Outline Drawings (Continued) 15 FSBF10CH60BTL Rev. C www.fairchildsemi.com FSBF10CH60BTL Smart Power Module Detailed Package Outline Drawings (Continued) 16 FSBF10CH60BTL Rev. C www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com