FPAB30BH60 Smart Power Module(SPM®) for Front-End Rectifier General Description Features FPAB30BH60 is an advanced smart power module(SPM®) of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function. • Low thermal resistance due to Al2O3-DBC substrate • 600V-30A 1-phase IGBT PWM semi-converter including a drive IC for gate driving and protection • Typical switching frequency of 20kHz • Isolation rating of 2500Vrms/min. Applications • AC 85V ~ 264V single-phase front-end rectifier Top View Bottom View 44mm 26.8mm Fig. 1. ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) May 2007 • PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions • For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View V CC COM COM COM IN VFO CFOD CSC P P N.C. R TH V TH VG VG N N N N NR NR L PR R NR NR S Fig. 2. ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) Integrated Power Functions FPAB30BH60 Smart Power Module (SPM®) Pin Descriptions Pin Number 1 Pin Name VCC Pin Description Common Bias Voltage for IC and IGBTs Driving 2,3,4 COM Common Supply Ground 5 IN(R) Signal Input for Low-side R-phase IGBT 6 VFO Fault Output 7 CFOD Capacitor for Fault Output Duration Time Selection 8 CSC Capacitor (Low-pass Filter) for Over Current Detection 9 R(TH) NTC Thermistor terminal 10 V(TH) NTC Thermistor terminal 11,12 Vg IGBT gate dummy 13~16 N IGBT emitter 17~20 NR Negative DC-Link of Rectifier 21,22 P 23 N.C 24 L 25 PR Positive DC–Link of Rectifier 26 R AC input for R-phase 27 S AC input for S-phase Positive Rail of DC–Link No Connection Reactor connection pin Internal Equivalent Circuit and Input/Output Pins VTH RTH NTC Thermistor P VG CSC CSC CFOD VFO IN COM L CFOD PR VFO IN(S) OUT R COM S VCC VCC N NR Fig. 3. Package Marking & Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FPAB30BH60 FPAB30BH60 SPM27-IA - - 10 ©2007 Fairchild Semiconductor Corporation Unless Otherwise Specified) Converter Part Supply Voltage Item Symbol Vi Condition Applied between R-S Supply Voltage (Surge) Vi(Surge) VPN VPN(Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Rating 264 Unit VRMS Applied between R-S 500 V Applied between P- N 450 V Applied between P- N 500 V 600 V TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz 25 A TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive 30 A VCES Input Current (100% Load) Ii Input Current (125% Load) Ii(125%) Collector Dissipation PC TC = 25°C per One IGBT Operating Junction Temperature TJ (Note 1) 169 W -20 ~ 150 °C Note 1. The maximum junction temperature rating of the power chips integrated within the SPM® is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM®, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Item Control Supply Voltage Symbol Condition VCC Applied between VCC - COM Input Signal Voltage VIN Applied between IN - COM Fault Output Supply Voltage VFO Applied between VFO - COM Fault Output Current IFO Sink Current at VFO Pin Current Sensing Input Voltage VSC Applied between CSC - COM Rating 20 Unit V -0.3~5.5 V -0.3~VCC+0.3 V 5 mA -0.3~VCC+0.3 V Total System Item Module Case Operation Temperature Symbol TC Storage Temperature TSTG Isolation Voltage VISO Condition Rating -20 ~ 100 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC Unit °C -40 ~ 125 °C 2500 Vrms Thermal Resistance Item Junction to Case Thermal Resistance (Referenced to PKG center) Symbol Rθ(j-c)Q Rθ(j-c)F Rθ(j-c)R Condition IGBT Max. 0.74 Unit °C/W FRD - - 1.44 °C/W Rectifier - - 2.07 °C/W Note : 2. For the measurement point of case temperature(TC), please refer to Fig. 2. ©2007 Fairchild Semiconductor Corporation Min. Typ. - FPAB30BH60 Smart Power Module (SPM®) Absolute Maximum Ratings (TJ = 25°C, Converter Part Item IGBT saturation voltage Symbol VCE(sat) Condition VCC =15V, VIN = 5V; IC =30A Min. - Typ. 2.0 Max. 2.8 Unit V V FRD forward voltage VFF IF = 30A - 1.8 2.5 Rectifier forward voltage VFR IF = 30A - 1.2 1.5 V Switching Times tON VPN = 400V, VCC = 15V, IC =30A VIN = 0V ↔ 5V, Inductive Load - 650 - ns - 400 - ns (Note 3) - 620 - ns tC(OFF) - 200 - ns trr - 60 - ns Irr - 3.5 - A - - 250 μA tC(ON) tOFF Collector - emitter Leakage Current ICES VCE = VCES Note 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4 Control Part Item Symbol Condition Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM rent Fault Output Voltage Min. - Typ. - Max. 26 Unit mA VFOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V Over Current Trip Level VSC(ref) VCC = 15V 0.45 0.5 0.55 V Supply Circuit UnderVoltage Protection UVCCD Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.2 V Fault-out Pulse Width tFOD CFOD = 33nF (Note 4) 1.4 1.8 2.0 ms Applied between IN - COM 3.0 - - V - - 0.8 V @ TC = 25°C (Note Fig. 9) - 50 - kΩ @ TC = 100°C (Note Fig. 9) - 2.99 - kΩ ON Threshold Voltage VIN(ON) OFF Threshold Voltage VIN(OFF) Resistance of Thermistor RTH Note 4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) FPAB30BH60 Smart Power Module (SPM®) Electrical Characteristics Irr 120% of IC 100% of IC VCE IC 90% of IC 15% of VCE IC 10% of IC VCE 15% of VCE 10% of IC VIN VIN tON trr tC(OFF) tC(ON) tOFF (a) Turn-on (b) Turn-off Fig. 4. Switching Time Definition Mechanical Characteristics and Ratings Item Limits Condition Mounting Torque Mounting Screw: - M3 Device Flatness Note Fig. 5 Recommended 0.62N•m Weight Typ. 0.62 Max. 0.72 0 - +120 μm - 15.00 - g (+) (+) (+) Fig. 5. Flatness Measurement Position ©2007 Fairchild Semiconductor Corporation Units Min. 0.51 N•m In p u t S ig n a l In te rn a l IG B T G a te -E m itte r V o lta g e P3 C o n tro l S u p p ly V o lta g e P2 UV re s e t P5 UV d e te c t P6 P1 O u tp u t C u rr e n t P4 F a u lt O u tp u t S ig n a l P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current Fig. 6. Under-Voltage Protection P5 In p u t S ig n a l P6 In te r n a l IG B T G a t e - E m itt e r V o lt a g e O C D e te c t io n P1 P4 P7 O u tp u t C u r r e n t P2 O C R e fe re n c e V o lt a g e ( 0 . 5 V ) S e n s in g V o lta g e R C F ilt e r D e la y F a u lt O u t p u t S ig n a l P3 P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start Fig. 7. Over Current Protection ©2007 Fairchild Semiconductor Corporation P8 FPAB30BH60 Smart Power Module (SPM®) Time Charts of SPMs Protective Function VG VT H +5V CSC CF OD Controller VFO P NTC Thermistor RT H L CSC CFOD PR VFO OUT IN IN R S COM VCC +15V COM VCC N NR Fig. 8. Application Example R-T Graph 120 Resistance [kΩ] 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [°C] Fig. 9. R-T Curve of the Built-in Thermistor ©2007 Fairchild Semiconductor Corporation Vac FPAB30BH60 Smart Power Module (SPM®) +5V ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) Detailed Package Outline Drawings ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) Detailed Package Outline Drawings ©2007 Fairchild Semiconductor Corporation FPAB30BH60 Smart Power Module (SPM®) Detailed Package Outline Drawings TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® EcoSPARK FACT Quiet Series™ ® FACT ® FAST FastvCore™ FPS™ ® FRFET SM Global Power Resource Green FPS™ ® POWEREDGE Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ ® OPTOLOGIC ® OPTOPLANAR PDP-SPM™ ® Power220 ® Power247 SuperSOT™-8 SyncFET™ ® The Power Franchise ™ TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ ® UHC UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I29 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com