FAIRCHILD FPDB20PH60

FPDB20PH60
Smart Power Module for Front-End Rectifier
General Description
Features
FPDB20PH60 is an advanced smart power module of
PFC(Power Factor Correction) that Fairchild has newly
developed and designed mainly targeting mid-power
application especially for an air conditioners. It combines
optimized circuit protection and drive IC matched to high
frequency switching IGBTs. System reliability is futher
enhanced by the integrated under-voltage lock-out and
over-current protection function.
• Low thermal resistance due to Al2O3-DBC substrate
• 600V-20A 2-phase IGBT PWM semi-converter including
a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.
Applications
• AC 180V ~ 264V single-phase front-end rectifier
Top View
Bottom View
44mm
26.8mm
Fig. 1.
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
January, 2006
• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(7) CFOD
(8) CSC
(21) VAC(22) NSENSE
(23) NC
N
(9) NC
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(15) NC
(24) N
Case Temperature (T C)
Detecting Point
(25) R
(16) NC
(17) NC
(18) NC
(26) S
DBC Substrate
(19) RTH
(27) PR
(20) VTH
Fig. 2.
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Integrated Power Functions
FPDB20PH60
Pin Descriptions
Pin Number
1
Pin Name
VCC
Pin Description
Common Bias Voltage for IC and IGBTs Driving
2
COM
Common Supply Ground
4
IN(R)
Signal Input for Low-side R-phase IGBT
5
IN(S)
Signal Input for Low-side S-phase IGBT
6
VFO
Fault Output
7
CFOD
Capacitor for Fault Output Duration Time Selection
8
CSC
Capacitor (Low-pass Filter) for Over Current Detection
19
R(TH)
NTC Thermistor terminal
20
V(TH)
NTC Thermistor terminal
21
VAC-
Current Sensing Terminal
22
NSENSE
24
N
Negative Rail of DC–Link
25
R
Output for R Phase
26
S
Output for S Phase
27
PR
Positive Rail of DC–Link
3, 9~18, 23
NC
No Connection
Current Sensing Reference Terminal
Internal Equivalent Circuit and Input/Output Pins
(20) V TH
(19) R TH
NTC
Therm istor
(27) P R
D1
D2
(8) C SC
CSC
(26) S
(7) C FOD
CFOD
(25) R
(6) V FO
VFO
(5) IN (S)
IN(S)
(4) IN (R)
IN(R)
(2) COM
COM
(1) VCC
VCC
OUT(S)
Q1
D3
Q2
D4
(24) N
(23) NC
OUT(R)
Shunt
Resistor
(22) N SENSE
(21) V AC-
Note :
1) Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions.
Fig. 3.
©2005 Fairchild Semiconductor Corporation
January, 2006
Unless Otherwise Specified)
Converter Part
Supply Voltage
Item
Symbol
Vi
Condition
Applied between R-S
Supply Voltage (Surge)
Vi(Surge)
Applied between R-S
500
V
VPN
Applied between P- N
450
V
VPN(Surge)
Applied between P- N
500
V
600
V
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz
12
A
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz, 1min Non-repetitive
15
A
Output Voltage
Output Voltage (Surge)
Collector-emitter Voltage
Rating
264
VCES
Input Current (100% Load)
Ii
Input Current (125% Load)
Ii(125%)
Collector Dissipation
PC
Power Rating of Shunt Resistor
PRSH
Operating Junction Temperature
TJ
Unit
VRMS
TC = 25°C per One IGBT
62.5
W
TC < 125°C
1.5
W
-20 ~ 125
°C
(Note 1)
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM,
the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)
Control Part
Item
Control Supply Voltage
Symbol
Condition
VCC
Applied between VCC - COM
Input Signal Voltage
VIN
Applied between IN - COM
Fault Output Supply Voltage
VFO
Applied between VFO - COM
Fault Output Current
IFO
Sink Current at VFO Pin
Current Sensing Input Voltage
VSC
Applied between CSC - COM
Rating
20
Unit
V
-0.3~5.5
V
-0.3~VCC+0.3
V
5
mA
-0.3~VCC+0.3
V
Total System
Item
Module Case Operation Temperature
Symbol
TC
Storage Temperature
TSTG
Isolation Voltage
VISO
Condition
Rating
-20 ~ 100
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
Unit
°C
-40 ~ 125
°C
2500
Vrms
Thermal Resistance
Item
Junction to Case Thermal
Resistance
(Referenced to chip center)
Symbol
Rθ(j-c)Q IGBT
Condition
Min. Typ.
-
Max.
1.6
Unit
°C/W
Rθ(j-c)HD High-side diode
-
-
2.4
°C/W
Rθ(j-c)LD Low-side diode
-
-
1.9
°C/W
Note :
2. For the measurement point of case temperature(TC), please refer to Fig. 2.
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Absolute Maximum Ratings (TJ = 25°C,
Converter Part
Item
IGBT saturation voltage
Symbol
VCE(sat)
High-side diode voltage
VFH
Low-side diode voltage
VFL
Switching Times
tON
Min.
-
Typ.
2.4
Max.
3.0
Unit
V
IF = 20A
-
1.9
2.7
V
IF = 20A
-
1.1
1.5
V
VPN = 400V, VCC = 15V, IC =20A
VIN = 0V ↔ 5V, Inductive Load
-
690
-
ns
-
510
-
ns
(Note 3)
-
450
-
ns
tC(OFF)
-
120
-
ns
trr
-
50
-
ns
Irr
-
2
-
A
RSENSE
3.6
4.0
4.4
mΩ
-
-
250
µA
tC(ON)
tOFF
Current sensing resistor
Collector - emitter
Leakage Current
ICES
Condition
VCC =15V, VIN = 5V; IC =20A
VCE = VCES
Note
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4
Control Part
Item
Symbol
Condition
Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM
rent
Fault Output Voltage
Min.
-
Typ.
-
Max.
26
Unit
mA
V
VFOH
VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up
4.5
-
-
VFOL
VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up
-
-
0.8
V
0.5
0.55
V
V
Over Current Trip Level
VSC(ref)
VCC = 15V
0.45
Supply Circuit UnderVoltage Protection
UVCCD
Detection Level
10.7
11.9
13.0
UVCCR
Reset Level
11.2
12.4
13.2
V
Fault-out Pulse Width
tFOD
CFOD = 33nF (Note 4)
1.4
1.8
2.0
ms
Applied between IN - COM
3.0
-
-
V
-
-
0.8
V
@ TC = 25°C (Note Fig. 9)
-
50
-
kΩ
@ TC = 80°C (Note Fig. 9)
-
5.76
-
kΩ
ON Threshold Voltage
VIN(ON)
OFF Threshold Voltage
VIN(OFF)
Resistance of Thermistor
RTH
Note
4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
FPDB20PH60
Electrical Characteristics
Irr
120% of IC
100% of IC
VCE
IC
90% of IC
15% of VCE
IC
10% of IC
VCE 15% of VCE
10% of IC
VIN
VIN
tON
trr
tC(OFF)
tC(ON)
tOFF
(a) Turn-on
(b) Turn-off
Fig. 4. Switching Time Definition
Mechanical Characteristics and Ratings
Item
Limits
Condition
Mounting Torque
Mounting Screw: - M3
Device Flatness
Note Fig. 5
Recommended 0.62N•m
Weight
Units
Min.
0.51
Typ.
0.62
Max.
0.72
0
-
+120
µm
-
15.00
-
g
N•m
(+)
(+)
(+)
Fig. 5. Flatness Measurement Position
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Time Charts of SPMs Protective Function
In p u t S ig n a l
In te rn a l IG B T
G a te -E m itte r V o lta g e
P3
C o n tro l S u p p ly V o lta g e
P2
UV
re s e t
P5
UV
d e te c t
P6
P1
O u tp u t C u rr e n t
P4
F a u lt O u tp u t S ig n a l
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P5
In p u t S ig n a l
P6
In te r n a l IG B T
G a t e - E m it te r V o lta g e
O C D e t e c tio n
P1
P4
P7
O u tp u t C u r r e n t
P2
O C R e fe r e n c e
V o lt a g e ( 0 .5 V )
S e n s in g V o lta g e
R C F ilt e r D e la y
F a u lt O u tp u t S ig n a l
P3
P8
P1 : Normal operation - IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / Fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation
P7 : IGBT OFF state
P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Vac
+5V
PFCM
VTH
RTH
CSC
CFOD
Microcontroller
VFO
or
IN(S)
IN(R)
DSP
NTC
Thermistor
PR
S
CSC
R
CFOD
Inverter
VFO
IN(S)
OUT(S)
IN(R)
COM
COM
N
OUT(R)
Shunt
Resistor
VCC
NSENSE
VAC-
VCC
Fig. 8. Application Example
R-T Graph
120
Resistance [kΩ]
100
80
60
40
20
0
20
30
40
50
60
70
80
90 100 110 120 130
Temperature [°C]
Fig. 9. R-T Curve of the Built-in Thermistor
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Detailed Package Outline Drawings
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Detailed Package Outline Drawings
©2005 Fairchild Semiconductor Corporation
January, 2006
FPDB20PH60
Detailed Package Outline Drawings
©2005 Fairchild Semiconductor Corporation
January, 2006
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18