FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode. • 38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (40nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • D D G G D G S TO-220 TO-263AB FDP Series S Absolute Maximum Ratings Symbol FDB Series S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS ID Gate-Source Voltage Drain Current – Continuous ±16 V A – Pulsed (Note 1) 76 (Note 1) 150 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Derate above 25°C TL 70 W 0.56 W/°C –55 to +150 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient 55 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6676S FDB6676S 13’’ 24mm 800 FDP6676S FDP6676S Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP6676S/FDB6676S Rev. C (W) FDP6676S/FDB6676S October 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 25 V, ID=12A 310 mJ 12 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 1 mA IGSSF Gate–Body Leakage, Forward VGS = 16 V, IGSSR Gate–Body Leakage, Reverse VGS = –16 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 30 25 ID = 1 mA, Referenced to 25°C VDS = 24 V, V VGS = 0 V mV/°C 500 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 3 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA 1 1.3 ID = 1 mA, Referenced to 25°C –8.4 VGS = 10 V, ID = 38 A ID = 35 A VGS = 4.5 V, VGS=10 V, ID =38A, TJ=125°C 4.7 5.2 7.3 mV/°C 6.5 8.0 11 60 mΩ ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 38 A 145 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 4853 pF 850 pF 316 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 14 25 ns 11 20 ns Turn–Off Delay Time 89 142 ns tf Turn–Off Fall Time 31 50 ns Qg Total Gate Charge 40 56 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 38 A, 10 nC 11 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) (Note 2) 0.4 0.5 28.5 57 0.7 V nS nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Electrical Characteristics FDP6676S/FDB6676S Typical Characteristics 150 1.8 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 125 4.5V 3.0V 100 2.5V 75 50 25 VGS = 2.5V 1.6 1.4 3.0V 3.5V 1.2 4.5V 10V 1 0.8 0 0 1 2 3 0 4 25 50 Figure 1. On-Region Characteristics. 100 125 150 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.6 ID = 38A VGS =10V ID = 19A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 75 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.014 0.012 0.01 TA = 125oC 0.008 0.006 TA = 25oC 0.6 0.004 -55 -35 -15 5 25 45 65 85 105 120 2 4 o TJ, JUNCTION TEMPERATURE ( C) 8 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 100 10 VGS = 0V VDS = 5V IS, REVERSE DRAIN CURRENT (A) 75 ID, DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) 60 45 TA = 125oC 30 25oC 15 -55oC 10 TA = 125oC 1 25oC 0.1 -55oC 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6676S/FDB6676S Rev C (W) 6400 VDS = 10V ID = 38A CISS 20V 6 4 4800 4000 3200 2400 COSS 1600 2 800 CRSS 0 0 0 20 40 60 0 80 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 1000 10ms 100m 1s R DS(ON) LIMIT 100 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 5600 15V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 10s DC 10 V GS = 10V SINGLE PULSE o R θJC = 1.8 C/W o T A = 25 C 1 SINGLE PULSE R θJC = 1.8°C/W T A = 25°C 800 600 400 200 0 0.1 1 10 V DS , DRAIN-SOURCE VOLTAGE (V) 100 1 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 1.8 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 t1 t2 0.01 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Current :0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6676S. 0.1 o TA = 100 C 0.01 0.001 o TA = 25 C 0.0001 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Time : 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6676S SyncFET body diode reverse recovery characteristic. Current : 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6676). Time : 12.5ns/div Figure 13. Non-SyncFET (FDP6676) body diode reverse recovery characteristic. FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Typical Characteristics (continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4