TC4426 TC4427 TC4428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION ■ ■ ■ The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. Other compatible drivers are the TC4426A/27A/28A. These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nsec range. They are pin compatible with the TC4426/27/28. ■ ■ ■ ■ ■ ■ ■ ■ High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability .......................... 1000pF in 25nsec Short Delay Time .............................. < 40nsec Typ. Consistent Delay Times With Changes in Supply Voltage Low Supply Current — With Logic “1” Input .................................... 4mA — With Logic “0” Input ................................. 400µA Low Output Impedance ....................................... 7Ω Latch-Up Protected ............. Will Withstand >0.5A Reverse Current ................................. Down to – 5V Input Will Withstand Negative Inputs ESD Protected .....................................................4kV Pinout Same as TC426/TC427/TC428 ORDERING INFORMATION Temperature Range Part No. Package TC4426COA TC4426CPA TC4426EOA TC4426EPA TC4426MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4427COA TC4427CPA TC4427EOA TC4427EPA TC4427MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4428COA TC4428CPA TC4428EOA TC4428EPA TC4428MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C © 2001 Microchip Technology Inc. DS21422A FUNCTIONAL BLOCK DIAGRAM VDD INVERTING OUTPUTS 300 mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC4426/TC4427/TC4428 GND EFFECTIVE INPUT C = 12 pF NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers. 2. TC4428 has one inverting and one noninverting driver. 3. Ground any unused driver input. TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ABSOLUTE MAXIMUM RATINGS* Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN CONFIGURATIONS NC 1 8 NC IN A 2 TC4426 GND 3 IN B 4 2,4 NC 1 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 7,5 INVERTING 8 NC TC4427 2,4 8 NC NC 1 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 7 OUT A TC4428 6 VDD 5 OUT B 2 7 4 5 7,5 NONINVERTING DIFFERENTIAL NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IREV High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current Test Conditions Min Typ Max 0V ≤ VIN ≤ VDD 2.4 — –1 — — — — 0.8 1 V V µA VDD – 0.025 — — — > 0.5 — — 7 1.5 — — 0.025 10 — — V V Ω A A Figure 1 Figure 1 Figure 1 Figure 1 — — — — 19 19 20 40 30 30 30 50 nsec nsec nsec nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 4.5 0.4 mA mA VDD = 18V, IO = 10mA Duty Cycle ≤ 2%, t ≤ 30µsec Duty Cycle ≤ 2% t ≤ 30 µsec Unit NOTE: 1. Switching times are guaranteed by design. TC4426/7/8-8 10/21/96 2 © 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IREV High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Min Typ Max 0V ≤ VIN ≤ VDD 2.4 — – 10 — — — — 0.8 10 V V µA VDD – 0.025 — — — > 0.5 — — 9 1.5 — — 0.025 12 — — V V Ω A A Figure 1 Figure 1 Figure 1 Figure 1 — — — — — — — — 40 40 40 60 nsec nsec nsec nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 8 0.6 mA mA VDD = 18V, IO = 10mA Duty Cycle ≤ 2%, t ≤ 300µsec Duty Cycle≤ 2% t ≤ 300µsec Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Test Conditions Power Supply Current Unit NOTE: 1. Switching times are guaranteed by design. Crossover Energy Loss –8 10 9 8 7 6 +5V 5 A • sec 90% INPUT 0V 10% tD1 VDD= 18V 4 4.7 µF 3 0.1 µF VDD tD2 tF tR 90% 90% OUTPUT 6 INPUT 2 5,7 2,4 10% 10% 0V OUTPUT Inverting Driver CL = 1000 pF +5V –9 10 4 6 8 10 12 VDD 14 16 18 3 0V VDD Thermal Derating Curves INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10ns 1600 MAX. POWER (mW) 1400 90% INPUT 8 Pin DIP tD1 90% tR OUTPUT 0V 1200 10% 10% 90% tD2 tF 10% Noninverting Driver 8 Pin CerDIP 1000 800 Figure 1. Switching Time Test Circuit 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. AMBIENT TEMPERATURE (°C) © 2001 Microchip Technology Inc. DS21422A 3 TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage 100 100 2200 pF TA = 25°C 80 1500 pF tFALL (nsec) tRISE (nsec) 80 2200 pF TA = 25°C 60 1000 pF 40 1500 pF 60 1000 pF 40 470 pF 470 pF 20 20 100 pF 100 pF 0 0 4 6 8 10 14 12 16 18 4 6 8 10 VDD 5V 18 5V TA = 25°C 80 tFALL (nsec) 80 tRISE (nsec) 16 100 TA = 25°C 10V 60 15V 40 60 10V 15V 40 20 20 0 100 1000 0 100 10,000 1000 CLOAD (pF) CLOAD (pF) Rise and Fall Times vs. Temperature 60 C LOAD = 1000 pF 50 40 30 tFALL 20 10 –55 –35 –15 10/21/96 CLOAD = 1000 pF t D2 VDD = 17.5V DELAY TIME (nsec) 50 10,000 Propagation Delay vs. Supply Voltage 60 TIME (nsec) 14 Fall TIme vs. Capacitive Load Rise TIme vs. Capacitive Load 100 TC4426/7/8-8 12 VDD TA = 25°C 40 tD1 30 20 tRISE 10 5 25 45 65 85 TEMPERATURE (°C) 105 125 4 4 6 8 10 12 VDD 14 16 © 2001 Microchip Technology Inc. 18 DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 TYPICAL CHARACTERISTICS (Cont.) Effect of Input Amplitude on Delay Time Propagation Delay Time vs. Temperature 60 60 VDD = 18V VLOAD= 1000 pF C LOAD = 1000 pF VDD = 10V 50 DELAY TIME (nsec) DELAY TIME (nsec) 50 40 t D2 30 t D1 20 2 40 t D1 30 20 10 0 t D2 4 6 VDRIVE (V) 8 10 –55 –35 –15 10 Quiescent Supply Current vs. Voltage 5 25 45 TA (°C) 65 85 105 125 Quiescent Supply Current vs. Temperature 4.0 V DD = 18V IQUIESCENT (mA) IQUIESCENT (mA) TA = +25°C BOTH INPUTS = 1 1 3.5 3.0 BOTH INPUTS = 1 2.5 BOTH INPUTS = 0 0.1 4 6 8 10 12 VDD 14 16 2.0 –55 –35 –15 18 High-State Output Resistance 25 45 TA (°C) 65 85 105 125 Low-State Output Resistance 25 25 20 20 WORST CASE @ TJ = +150°C RDS(ON) (Ω) RDS(ON) (Ω) 5 15 TYP @ TA = +25°C 10 WORST CASE @ TJ = +150°C 15 TYP @ TA = +25°C 10 8 8 5 5 4 6 8 10 12 14 16 18 4 VDD © 2001 Microchip Technology Inc. DS21422A 5 6 8 10 12 VDD 14 16 18 TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only) Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 60 VDD = 18V 2 MHz VDD = 18V 2200 pF 50 50 1000 pF ISUPPLY (mA) ISUPPLY (mA) 900 kHz 40 600 kHz 30 20 200 kHz 10 40 100 pF 30 20 10 20 kHz 0 0 100 1000 CLOAD (pF) 10 10,000 Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 60 2 MHz VDD = 12V 50 50 40 40 ISUPPLY (mA) ISUPPLY (mA) VDD = 12V 30 900 kHz 20 600 kHz 200 kHz 20 kHz 0 100 1000 CLOAD (pF) 1000 pF 30 20 100 pF 0 10 10,000 100 1000 FREQUENCY (kHz) Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 60 VDD = 6V VDD = 6V 50 ISUPPLY (mA) 50 ISUPPLY (mA) 2200 pF 10 10 40 30 2 MHz 20 900 kHz 600 kHz 200 kHz 20 kHz 10 0 100 TC4426/7/8-8 100 1000 FREQUENCY (kHz) 10/21/96 1000 CLOAD (pF) 40 2200 pF 30 1000 pF 20 10 100 pF 0 10 10,000 6 100 1000 FREQUENCY (kHz) © 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 PACKAGE DIMENSIONS 8-Pin CerDIP .110 (2.79) .090 (2.29) PIN 1 .300 (7.62) .230 (5.84) .020 (0.51) MIN. .055 (1.40) MAX. .320 (8.13) .290 (7.37) .400 (10.16) .370 (9.40) .040 (1.02) .020 (0.51) .200 (5.08) .160 (4.06) .150 (3.81) MIN. .200 (5.08) .125 (3.18) .015 (0.38) .008 (0.20) 3° MIN. .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41) 8-Pin Plastic DIP PIN 1 .260 (6.60) .240 (6.10) .045 (1.14) .030 (0.76) .070 (1.78) .040 (1.02) .310 (7.87) .290 (7.37) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .040 (1.02) .020 (0.51) .150 (3.81) .115 (2.92) .110 (2.79) .090 (2.29) .015 (0.38) .008 (0.20) 3° MIN. .400 (10.16) .310 (7.87) .022 (0.56) .015 (0.38) Dimensions: inches (mm) © 2001 Microchip Technology Inc. DS21422A 7 TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 PACKAGE DIMENSIONS Cont.) 8-Pin SOIC .157 (3.99) .150 (3.81) .244 (6.20) .228 (5.79) .050 (1.27) TYP. .197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .010 (0.25) .007 (0.18) 8° MAX. .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .050 (1.27) .016 (0.40) Dimensions: inches (mm) TC4426/7/8-8 10/21/96 8 © 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 WORLDWIDE SALES AND SERVICE AMERICAS New York Corporate Office 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 ASIA/PACIFIC (continued) San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-334-8870 Fax: 65-334-8850 Taiwan Atlanta 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 ASIA/PACIFIC Austin EUROPE China - Beijing Australia Analog Product Sales 8303 MoPac Expressway North Suite A-201 Austin, TX 78759 Tel: 512-345-2030 Fax: 512-345-6085 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Boston Analog Product Sales Unit A-8-1 Millbrook Tarry Condominium 97 Lowell Road Concord, MA 01742 Tel: 978-371-6400 Fax: 978-371-0050 Toronto Microchip Technology Beijing Office Unit 915 New China Hong Kong Manhattan Bldg. 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No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies. © 2001 Microchip Technology Inc. DS21422A 9 TC4426/7/8-8 10/21/96