MICROCHIP TC4424

TC4423/TC4424/TC4425
3A Dual High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 1800 pF in 25 ns
• Short Delay Times: <40 ns (typ)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 3.5 mA (Max)
- With Logic ‘0’ Input – 350 µA (Max)
• Low Output Impedance: 3.5 (typ)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Pin compatible with the TC1426/TC1427/TC1428,
TC4426/TC4427/TC4428 and TC4426A/
TC4427A/TC4428A devices.
• Space-saving 8-Pin 6x5 DFN Package
The TC4423/TC4424/TC4425 devices are a family of
3A, dual-output buffers/MOSFET drivers. Pin compatible with the TC1426/27/28, TC4426/27/28 and
TC4426A/27A/28A dual 1.5A driver families, the
TC4423/24/25 family has an increased latch-up current
rating of 1.5A, making them even more robust for
operation in harsh electrical environments.
As MOSFET drivers, the TC4423/TC4424/TC4425 can
easily charge 1800 pF gate capacitance in under
35 nsec, providing low enough impedances in both the
on and off states to ensure the MOSFET's intended
state will not be affected, even by large transients.
The TC4423/TC4424/TC4425 inputs may be driven
directly from either TTL or CMOS (2.4V to 18V). In
addition, the 300 mV of built-in hysteresis provides
noise immunity and allows the device to be driven from
slowly rising or falling waveforms.
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
Package Types(1)
8-Pin PDIP TC4423 TC4424 TC4425
NC
IN A
GND
IN B
1
8
2 TC4423 7
3 TC4424 6
4 TC4425 5
8-Pin DFN
NC
1
IN A 2
GND
3
IN B 4
TC4423
TC4424
TC4425
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
(2) TC4423 TC4424 TC4425
8
NC
NC
NC
7
OUT A
OUT A
OUT A
6
VDD
VDD
VDD
5
OUT B
OUT B
OUT B
16-Pin SOIC (Wide) TC4423 TC4424 TC4425
NC
IN A
NC
GND
GND
NC
IN B
NC
1
16
2
3
15
4
5
6
7
8
TC4423
TC4424
TC4425
14
13
12
11
10
9
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
 2002-2012 Microchip Technology Inc.
DS21421E-page 1
TC4423/TC4424/TC4425
Functional Block Diagram(1)
VDD
Inverting
750 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7V
TC4423 Dual Inverting
TC4424 Dual Non-inverting
TC4425 One Inverting, One Non-inverting
Note 1: Unused inputs should be grounded.
DS21421E-page 2
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................ (VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA 70°C)
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD18V.
Parameters
Sym
Min
Typ
Max
Units
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–1
—
1
µA
VOH
VDD – 0.025
—
—
V
Conditions
Input
0VVINVDD
Output
High Output Voltage
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance, High
ROH
—
2.8
5

IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
3.5
5

IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
3
—
A
Latch-Up Protection Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle2%, t 300 µsec.
Rise Time
tR
—
23
35
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
tF
—
25
35
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD1
—
33
75
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD2
—
38
75
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
IS
—
—
1.5
0.15
2.5
0.25
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Switching Time (Note 1)
Power Supply
Power Supply Current
Note 1:
2:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
 2002-2012 Microchip Technology Inc.
DS21421E-page 3
TC4423/TC4424/TC4425
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–10
—
+10
µA
High Output Voltage
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance, High
ROH
—
3.7
8

IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
4.3
8

IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
3.0
—
A
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle2%, t 300 µsec
Rise Time
tR
—
28
60
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
tF
—
32
60
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD1
—
32
100
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD2
—
38
100
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
IS
—
—
2.0
0.2
3.5
0.3
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Input
0VVINVDD
Output
Switching Time (Note 1)
Power Supply
Power Supply Current
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
TA
0
—
+70
°C
Specified Temperature Range (E)
TA
–40
—
+85
°C
Specified Temperature Range (V)
TA
–40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
Thermal Resistance, 8L-6x5 DFN
JA
—
33.2
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
125
—
°C/W
Thermal Resistance, 16L-SOIC
JA
—
155
—
°C/W
Package Thermal Resistances
DS21421E-page 4
Typical four-layer board with
vias to ground plane
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
100
4700 pF
4700 pF
80
tFALL (nsec)
tRISE (nsec)
80
3300 pF
60
2200 pF
40
1500 pF
1000 pF
20
470 pF
0
2200 pF
40
1500 pF
1000 pF
20
470 pF
0
4
6
8
FIGURE 2-1:
Voltage.
10
12
VDD (V)
14
16
18
Rise Time vs. Supply
4
6
8
10
12
VDD (V)
FIGURE 2-4:
Voltage.
5V
tFALL (nsec)
60
10V
15V
40
18
Fall Time vs. Supply
5V
60
10V
15V
40
20
20
0
100
1000
0
100
10,000
1000
CLOAD (pF)
CLOAD (pF)
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
32
10,000
Fall Time vs. Capacitive
100
CLOAD = 2200 pF
tRISE
Delay Time (nsec)
tRISE
26
24
CLOAD = 2200 pF
VDD = 10V
tFALL
28
Time (nsec)
16
80
80
30
14
100
100
tRISE (nsec)
3300 pF
60
tD1
80
60
40
22
tFALL
20
18
-55
-35
FIGURE 2-3:
Temperature.
-15
tD2
20
5
25 45
TA (°C)
65
85
105 125
Rise and Fall Times vs.
 2002-2012 Microchip Technology Inc.
0
FIGURE 2-6:
Amplitude.
1
2
3
4
5 6 7
Input (V)
8
9
10 11 12
Propagation Delay vs. Input
DS21421E-page 5
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
50
50
CLOAD = 2200 pF
CLOAD = 2200 pF
45
tD2
Delay Time (nsec)
Delay Time (nsec)
45
40
35
tD2
30
tD1
40
35
tD1
30
25
25
20
-55
20
4
6
8
FIGURE 2-7:
Supply Voltage.
10
12
VDD (V)
14
16
18
Propagation Delay Time vs.
-35
-15
FIGURE 2-10:
Temperature.
5
25 45
TA (°C)
65
85
105 125
Propagation Delay Time vs.
1.4
TA = 25°C
Both Inputs = 1
1.2
IQUIESCENT (mA)
IQUIESCENT (mA)
1
Both Inputs = 0
0.1
1.0
0.8
Both Inputs = 1
0.6
0.4
0.2
0.01
4
6
8
FIGURE 2-8:
Supply Voltage.
10
12
VDD (V)
14
16
18
Quiescent Current vs.
-35
FIGURE 2-11:
Temperature.
14
-15
5
25 45
TA (°C)
65
85
105 125
Quiescent Current vs.
14
12
12
Worst Case
@ TJ = +150°C
10
RDS(ON) (Ω)
RDS(ON) (Ω)
Both Inputs = 0
0.0
-55
8
6
Typical @
TA = +25°C
4
Worst Case
@ TJ = +150°C
10
8
6
Typical @
TA = +25°C
4
2
2
4
6
8
10
12
VDD (V)
14
16
FIGURE 2-9:
Output Resistance
(Output High) vs. Supply Voltage.
DS21421E-page 6
18
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-12:
Output Resistance
(Output Low) vs. Supply Voltage.
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
Note: Load on single output only
60
60
VDD = 18V
VDD = 18V
50
3300 pF
50
1000 pF
ISUPPLY (mA)
ISUPPLY (mA)
634 kHz
40
30
355 kHz
20
200 kHz
40
30
10,000 pF
20
100 pF
63.4 kHz
10 112.5 kHz
35.5 kHz
10
20 kHz
0
100
FIGURE 2-13:
Capacitive Load.
1000
CLOAD (pF)
0
10,000
Supply Current vs.
1.125 MHz
40
200 kHz
634 kHz
355 kHz
0
100
FIGURE 2-14:
Capacitive Load.
1000
CLOAD (pF)
60
50
40
30
10
0
10,000
Supply Current vs.
10
FIGURE 2-17:
Frequency.
120
100
Frequency (kHz)
1000
Supply Current vs.
120
VDD = 6V
4700 pF
VDD = 6V
100
100
80
1.125 MHz
60
3.55 MHz
634 kHz
40
2 MHz
FIGURE 2-15:
Capacitive Load.
10,000 pF
80
2200 pF
60
1000 pF
40
100 pF
355 kHz
20
0
100
ISUPPLY (mA)
ISUPPLY (mA)
100 pF
10,000 pF
20
112.5 kHz
63.4 kHz
20 kHz
10
3300 pF
1000 pF
70
50
20
Supply Current vs.
VDD = 12V
80
2 MHz
60
30
1000
90
VDD = 12V
ISUPPLY (mA)
ISUPPLY (mA)
70
100
Frequency (kHz)
FIGURE 2-16:
Frequency.
90
80
10
20
112.5 kHz
20 kHz
1000
CLOAD (pF)
10,000
Supply Current vs.
 2002-2012 Microchip Technology Inc.
0
10
FIGURE 2-18:
Frequency.
100
Frequency (kHz)
1000
Supply Current vs.
DS21421E-page 7
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
10-7
8
6
4
A • sec
2
10-8
8
6
4
2
10-9
0
2
4
6
8
10
12
14
16
18
VIN (V)
Note:
The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
FIGURE 2-19:
DS21421E-page 8
TC4423 Crossover Energy.
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE (1)
8-Pin PDIP
8-Pin
DFN
16-Pin
SOIC
(Wide)
1
1
1
NC
No connection
2
2
2
IN A
Input A
—
—
3
NC
3
3
4
GND
—
—
5
GND
—
—
6
NC
Description
No connection
Ground
Ground
No connection
4
4
7
IN B
Input B
—
—
8
NC
No connection
—
—
9
NC
5
5
10
OUT B
—
—
11
OUT B
6
6
12
VDD
—
—
13
VDD
7
7
14
OUT A
—
—
15
OUT A
8
8
16
NC
No connection
PAD
—
NC
Exposed Metal Pad
—
Note 1:
3.1
Symbol
No connection
Output B
Output B
Supply input
Supply input
Output A
Output A
Duplicate pins must be connected for proper operation.
Inputs A and B
3.4
Ground (GND)
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.2
3.5
Outputs A and B
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
3.3
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat
removal from the package.
Supply Input (VDD)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized lowimpedance path for the peak currents that are to be
provided to the load.
 2002-2012 Microchip Technology Inc.
DS21421E-page 9
TC4423/TC4424/TC4425
4.0
APPLICATIONS INFORMATION
VDD = 18V
VDD = 18V
1 µF
WIMA
MKS-2
Input
1 µF
WIMA
MKS-2
0.1 µF
Ceramic
Output
CL = 1800 pF
1
2
Input
TC4424
(1/2 TC4425)
Input: 100 kHz,
square wave,
tRISE = tFALL 10 ns
+5V
Input: 100 kHz,
square wave,
tRISE = tFALL 10 ns
+5V
90%
Input
0V
Output
CL = 1800 pF
1
2
TC4423
(1/2 TC4425)
0.1 µF
Ceramic
90%
Input
10%
18V
tD1
tF
tD2
0V
tR
90%
90%
Output
0V
FIGURE 4-1:
Time.
DS21421E-page 10
10%
18V
tD1 90%
Output
10%
10%
Inverting Driver Switching
0V
FIGURE 4-2:
Switching Time.
10%
tR
90%
tD2
tF
10%
Non-inverting Driver
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4423
EMF
0420
256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
TC4423
CPA256
0420
16-Lead SOIC (300 mil)
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
Example:
TC4423COE
0420256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2002-2012 Microchip Technology Inc.
DS21421E-page 11
TC4423/TC4424/TC4425
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
DS21421E-page 12
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1

E
A2
A
L
c
A1

B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB


MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
 2002-2012 Microchip Technology Inc.
DS21421E-page 13
TC4423/TC4424/TC4425
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
p
E1
D
2
1
n
B
h

45
c
A2
A


L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L

c
B


MIN
.093
.088
.004
.394
.291
.398
.010
.016
0
.009
.014
0
0
A1
INCHES*
NOM
16
.050
.099
.091
.008
.407
.295
.406
.020
.033
4
.011
.017
12
12
MAX
.104
.094
.012
.420
.299
.413
.029
.050
8
.013
.020
15
15
MILLIMETERS
NOM
16
1.27
2.36
2.50
2.24
2.31
0.10
0.20
10.01
10.34
7.39
7.49
10.10
10.30
0.25
0.50
0.41
0.84
0
4
0.23
0.28
0.36
0.42
0
12
0
12
MIN
MAX
2.64
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
0.33
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
DS21421E-page 14
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
6.0
REVISION HISTORY
Revision E (December 2012)
Added a note to each package outline drawing.
 2002-2012 Microchip Technology Inc.
DS21421E-page 15
TC4423/TC4424/TC4425
DS21421E-page 16
 2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
X
Package
Tape & Reel
PB Free
Examples:
a)
TC4423COE:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
16LD SOIC package.
Device:
TC4423:
TC4424:
TC4425:
3A Dual MOSFET Driver, Inverting
3A Dual MOSFET Driver, Non-Inverting
3A Dual MOSFET Driver, Complementary
b)
C
E
V
0°C to +70°C (PDIP & SOIC Only)
-40°C to +85°C
-40°C to +125°C
c)
TC4423CPA:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
8LD PDIP package.
Temperature Range:
=
=
=
TC4423VMF:
3A Dual Inverting
MOSFET Driver,
-40°C to +125°C,
8LD DFN package.
Package:
MF
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
OE
= SOIC (Wide), 16-pin
OE713 = SOIC (Wide), 16-pin (Tape and Reel)
PA
= Plastic DIP, (300 mil body), 8-lead
a)
G
3A Dual Non-Inverting,
MOSFET Driver,
0°C to +70°C,
16LD SOIC package,
Tape and Reel.
b)
PB Free:
TC4424COE713:
TC4424EPA:
= Lead-Free device *
= Blank
3A Dual Non-Inverting,
MOSFET Driver,
-40°C to +85°C,
8LD PDIP package.
* Available on selected packages. Contact your local sales
representative for availability.
a)
TC4425EOE:
3A Dual Complementary,
MOSFET Driver,
-40°C to +85°C,
16LD SOIC package.
b)
TC4425CPA:
3A Dual Complementary,
MOSFET Driver,
0°C to +70°C,
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002-2012 Microchip Technology Inc.
DS21421E-page 17
TC4423/TC4424/TC4425
NOTES:
DS21421E-page 18
 2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767962
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2002-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21421E-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS21421E-page 20
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
11/27/12
 2002-2012 Microchip Technology Inc.