TC4426A TC4427A TC4428A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC4426A/4427A/4428A can easily switch 1000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. ■ ■ ■ ■ ■ ■ ■ ■ High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ................. 1000 pF in 25 nsec Typ Short Delay Time ................................. 30 nsec Typ Matched Rise, Fall and Delay Times Low Supply Current — With Logic “1” Input ............................ 1 mA Typ — With Logic “0” Input ......................... 100 µA Typ Low Output Impedance ................................ 7Ω Typ Latch-Up Protected: Will Withstand 0.5A Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .................................................... 4 kV Pinout Same as TC426/TC427/TC428 Part No. NC 1 8 NC IN A 2 TC4426A GND 3 IN B 4 2,4 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 7,5 8 NC TC4427A 2,4 INVERTING 8 NC NC 1 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 7 OUT A TC4428A 6 VDD 5 OUT B 2 7 4 5 7,5 NONINVERTING DIFFERENTIAL NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. FUNCTIONAL BLOCK DIAGRAM INVERTING OUTPUTS VDD 2 mA 300 mV OUTPUT Package 4 Temp. Range TC4426ACOA TC4426ACPA TC4426AEOA TC4426AEPA TC4426AMJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4427ACOA TC4427ACPA TC4427AEOA TC4427AEPA TC4427AMJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4428ACOA TC4428ACPA TC4428AEOA TC4428AEPA TC4428AMJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C NONINVERTING OUTPUTS INPUT 3 ORDERING INFORMATION PIN CONFIGURATIONS NC 1 1 5 6 7 4.7V TC4426A/TC4427A/TC4428A GND EFFECTIVE INPUT C = 12 pF NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers. 2. TC4428A has one inverting and one noninverting driver. 3. Ground any unused driver input. 8 TC4426A/7A/8A-9 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-251 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W ELECTRICAL CHARACTERISTICS: Symbol Parameter Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Test Conditions Min Typ Max Unit TA = 25°C – 40°C ≤ TA ≤ 85°C 2.4 — –1 – 10 — — — — — 0.8 1 10 V V µA VDD – 0.025 — — — — — 0.5 — — 7 7 8 1.5 — — 0.025 9 10 11 — — V V Ω TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — — — — — — — — — — — — 25 27 29 25 27 29 30 33 35 30 33 35 35 40 40 35 40 40 35 40 45 35 40 45 nsec VDD = 18V — — 1.0 0.1 2.0 0.2 mA Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current – 0V ≤ VIN ≤ VDD VOH VOL RO High Output Voltage Low Output Voltage Output Resistance DC Test DC Test VDD = 18V, IO = 10mA IPK IREV Peak Output Current VDD = 18V Latch-Up Protection Duty Cycle ≤ 2% Withstand Reverse Current t ≤ 300µsec Output TA = 25°C 0°C ≤ TA ≤ 70°C – 40° ≤ TA ≤ 85°C VDD = 18V A A Switching Time (Note 1) tR Rise Time Figure 1 tF Fall Time Figure 1 tD1 Delay Time Figure 1 tD2 Delay Time Figure 1 nsec nsec nsec Power Supply IS Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) NOTE: 1. Switching times are guaranteed by design. 4-252 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A +5V 1 2 90% INPUT 0V VDD= 18V 4.7 µF 0.1 µF 10% tD1 VDD tD2 tF tR 90% 90% 3 OUTPUT 6 INPUT 7 2 OUTPUT Inverting Driver CL = 1000 pF 4 10% 10% 0V 5 +5V 90% 4 INPUT 3 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10nsec 10% tD1 90% tR OUTPUT 0V 10% 90% tD2 tF 10% 5 Noninverting Driver Figure 1. Switching Time Test Circuit 6 7 8 TELCOM SEMICONDUCTOR, INC. 4-253 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A TYPICAL CHARACTERISTICS Fall Time vs. Supply Voltage Temperature = 25°C Rise Time vs. Supply Voltage Temperature = 25°C 100 100 CL= 2200pF CL= 2200pF 60 80 CL= 1500pF tF (nsec) tR (nsec) 80 CL= 1000pF 40 CL= 1500pF 60 CL= 1000pF 40 CL= 470pF CL= 470pF 20 20 CL= 100pF CL= 100pF 0 5.0 10.0 12.5 VDD (Volts) 15.0 17.5 Effect of Input Amplitude on Delay VDD = 10V CL = 1000pF 110 tD1 100 90 80 70 60 50 40 30 20 7.5 10.0 12.5 VDD (Volts) 55 tD2 tD1 50 45 tD2 40 35 30 2 3 4 5 6 7 8 20 9 5 0 VDD (Volts) 40 35 Delay Time (nsec) Time (nsec) 28 24 22 20 18 tR 14 -100 tF -50 0 15 20 Propagation Delay Time vs.Temperature VDD = 18V CL = 1000pF 26 16 10 VDD (Volts) Rise and Fall Times vs. Temperature VDD = 18V CL = 1000pF 100 50 30 25 tD2 20 tD1 15 -100 150 -50 0 50 TEMPERATURE (°C) TEMPERATURE (°C) High-State Output Resistance 100 150 Low State Output Resistance 30 30 TA = 125°C 20 25 Rds(on)ohms 25 Rds(on)ohms 17.5 25 1 TA = 125°C 15 10 5 TA = 125°C 20 15 10 TA = 125°C 5 0 0 0 4-254 15.0 Propagation Delay Time vs. Supply Voltage CL = 1000pF 60 Delay Time (nsec) Delay Time (nsec) 7.5 0 5.0 5 10 VDD (Volts) 15 20 0 5 10 15 20 VDD (Volts) TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A 1 TYPICAL CHARACTERISTICS (Cont.) Supply Current vs. Frequency VDD = 18v 60 CL= 2200pF CL= 1500pF I Supply (mA) 50 40 CL= 1000pF CL= 100pF 30 20 600MHz 30 20 0 0 1000 1500 2000 20MHz 0 2500 500 Supply Current vs. Frequency VDD = 12v 80 CL= 1500pF 50 40 CL= 1000pF 30 CL= 100pF 20 70 I Supply (mA) I Supply (mA) 60 1000 1500 2000 4 50 40 900MHz 30 600MHz 20 200MHz 20MHz 0 500 2500 2MHz 60 10 0 2500 0 500 1000 1500 2000 2500 5 CL (pF) FREQUENCY (KHz) Supply Current vs. Capacitance Load VDD = 6v Supply Current vs. Frequency VDD = 6v 40 40 35 35 CL= 2200pF 30 I Supply (mA) I Supply (mA) 2000 80 10 CL= 1500pF 25 20 CL= 1000pF 15 10 CL= 100pF 5 0 2MHz 30 25 15 900MHz 10 600MHz 5 1000 500 1500 2000 0 2500 500 Quiescent Supply Current vs. Voltage I Quiescent (µA) Both inputs = 1 500 400 Both inputs = 0 5 10 VDD (Volts) TELCOM SEMICONDUCTOR, INC. 1500 2000 2500 Quiescent Supply Current vs. Temperature VDD = 18v TEMPERATURE = 25°C 0 1000 CL (pF) FREQUENCY (KHz) 900 800 700 600 6 200MHz 20MHz 0 0 I Quiescent (µA) 1500 Supply Current vs.Capacitance Load VDD = 12v CL= 2200pF 70 300 200 100 0 1000 CL (pF) FREQUENCY (KHz) 0 3 200MHz 10 500 900MHz 40 10 0 2 2MHz 50 I Supply (mA) 60 Supply Current vs. Capacitance Load VDD = 18v 15 20 1100 1000 Both inputs = 0 900 800 700 600 500 400 300 200 Both inputs = 0 100 0 -50 -100 50 0 TEMPERATURE = (°C) 100 7 8 150 4-255