TC4421M/TC4422M 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load - 180 ns with 47,000 pF Load • Short Propagation Delays: 30 ns (typ) • Low Supply Current: - With Logic ‘1’ Input – 200 µA (typ) - With Logic ‘0’ Input – 55 µA (typ) • Low Output Impedance: 1.4 (typ) • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current • Input: Will Withstand Negative Inputs Up To 5V • Pin-Compatible with the TC4420M/TC4429M 6A MOSFET Driver • Wide Operating Temperature Range: - -55°C to +125°C • See TC4421/TC4422 Data Sheet (DS21420) for additional temperature range and package offerings The TC4421M/TC4422M are high-current buffer/ drivers capable of driving large MOSFETs and IGBTs. • • • • • Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver 2005-2013 Microchip Technology Inc. The TC4421M/TC4422M inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Package Types 8-Pin CERDIP VDD INPUT NC GND Note: 1 2 3 4 TC4421M TC4422M Applications They are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched, under any conditions, within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. TC4421M TC4422M 8 7 6 5 VDD VDD OUTPUT OUTPUT GND OUTPUT OUTPUT GND Duplicate pins must both be connected for proper operation. DS21934B-page 1 TC4421M/TC4422M Functional Block Diagram VDD TC4421M Inverting 300 mV Output TC4422M Non-Inverting Input 4.7V GND Effective Input C = 25 pF DS21934B-page 2 2005-2013 Microchip Technology Inc. TC4421M/TC4422M 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Input Current (VIN > VDD)................................... 50 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL — 1.3 0.8 V Input Current IIN -10 — +10 µA 0VVINVDD High Output Voltage VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance, High ROH — 1.4 — IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 0.9 1.7 IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 9.0 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — >1.5 — A Duty cycle2%, t 300 µsec Rise Time tR — 60 75 ns Figure 4-1, CL = 10,000 pF Fall Time tF — 60 75 ns Figure 4-1, CL = 10,000 pF Delay Time tD1 — 30 60 ns Figure 4-1 Delay Time tD2 — 33 60 ns Figure 4-1 IS — — 0.2 55 1.5 150 mA µA VIN = 3V VIN = 0V VDD 4.5 — 18 V Output Switching Time (Note 1) Power Supply Power Supply Current Operating Input Voltage Note 1: Switching times ensured by design. 2005-2013 Microchip Technology Inc. DS21934B-page 3 TC4421M/TC4422M DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Logic ‘1’, High Input Voltage VIH 2.4 Logic ‘0’, Low Input Voltage VIL — Input Current IIN Conditions — — V — 0.8 V -10 — +10 µA 0VVINVDD VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance, High ROH — 2.4 3.6 IOUT = 10 mA, VDD = 18V ROL — 1.8 2.7 IOUT = 10 mA, VDD = 18V Rise Time tR — 60 120 ns Figure 4-1, CL = 10,000 pF Fall Time tF — 60 120 ns Figure 4-1, CL = 10,000 pF Delay Time tD1 — 50 80 ns Figure 4-1 Delay Time tD2 — 65 80 ns Figure 4-1 IS — — — — 3 0.2 mA VIN = 3V VIN = 0V VDD 4.5 — 18 V Input Output High Output Voltage Output Resistance, Low Switching Time (Note 1) Power Supply Power Supply Current Operating Input Voltage Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym Min Typ Max Units TA -55 — +125 °C Conditions Temperature Ranges Specified Temperature Range (M) Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C JA — 150 — °C/W Package Thermal Resistances Thermal Resistance, 8L-CERDIP DS21934B-page 4 2005-2013 Microchip Technology Inc. TC4421M/TC4422M 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 220 180 200 160 180 22,000 pF 140 22,000 pF 140 120 10,000 pF 100 80 4700 pF 60 120 100 80 10,000 pF 60 4700 pF 40 40 1000 pF 20 0 tFALL (nsec) tRISE (nsec) 160 20 1000 pF 4 6 FIGURE 2-1: Voltage. 8 14 10 12 VDD (V) 16 0 18 Rise Time vs. Supply 4 6 8 FIGURE 2-4: Voltage. 10 12 VDD (V) 14 Fall Time vs. Supply 5V 5V 250 250 10V 200 150 15V 100 tFALL (nsec) 10V tRISE (nsec) 18 300 300 200 150 15V 100 50 50 0 100 1000 FIGURE 2-2: Load. 10,000 CLOAD (pF) 0 100 100,000 Rise Time vs. Capacitive 1000 FIGURE 2-5: Load. 10,000 CLOAD (pF) 100,000 Fall Time vs. Capacitive 50 90 CLOAD = 10,000 pF VDD = 15V 80 CLOAD = 1000 pF 45 70 TIME (nsec) TIME (nsec) 16 60 tRISE 50 40 tD2 35 tD1 tFALL 40 30 30 -40 0 40 80 120 25 4 6 TA (°C) FIGURE 2-3: Temperature. Rise and Fall Times vs. 2005-2013 Microchip Technology Inc. 8 10 12 14 16 18 VDD (V) FIGURE 2-6: Supply Voltage. Propagation Delay vs. DS21934B-page 5 TC4421M/TC4422M Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 220 180 VDD = 18V 200 160 2 MHz 180 VDD = 18V 47,000 pF 140 10,000 pF 120 63.2 kHz 1.125 MHz 100 80 ISUPPLY (mA) ISUPPLY (mA) 160 140 632 kHz 60 40 1000 10,000 CLOAD (pF) 120 2 MHz 63.2 kHz 80 1.125 MHz 40 632 kHz 20 200 kHz ISUPPLY (mA) ISUPPLY (mA) 140 22,000 pF 10,000 pF 47,000 pF 100 80 60 4700 pF 0.1 μF 20 kHz 20 470 pF 0 100 1000 10,000 CLOAD (pF) 10 100,000 FIGURE 2-8: Supply Current vs. Capacitive Load (VDD = 12V). 100 FREQUENCY (kHz) 1000 FIGURE 2-11: Supply Current vs. Frequency (VDD = 12V). 100 120 200 kHz VDD = 6V VDD = 6V 47,000 pF 100 80 22,000 pF 60 50 63.2 kHz 40 2 MHz ISUPPLY (mA) 70 30 1000 40 0 90 470 pF 100 FREQUENCY (kHz) VDD = 12V 160 120 60 4700 pF 180 VDD = 12V 140 100 0.1 μF 60 FIGURE 2-10: Supply Current vs. Frequency (VDD = 18V). 180 ISUPPLY (mA) 80 0 10 100,000 FIGURE 2-7: Supply Current vs. Capacitive Load (VDD = 18V). 160 100 20 20 0 100 120 40 20 kHz 200 kHz 22,000 pF 80 10,000 pF 4700 pF 60 40 632 kHz 0.1 μF 20 20 kHz 10 20 470 pF 0 100 1000 10,000 CLOAD (pF) 100,000 FIGURE 2-9: Supply Current vs. Capactive Load (VDD = 6V). DS21934B-page 6 0 10 100 FREQUENCY (kHz) 1000 FIGURE 2-12: Supply Current vs. Frequency (VDD = 6V). 2005-2013 Microchip Technology Inc. TC4421M/TC4422M Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 50 120 VDD = 10V CLOAD = 10,000 pF 110 100 VDD = 18V CLOAD = 10,000 pF VIN = 5V 45 80 TIME (nsec) TIME (nsec) 90 70 60 tD2 50 40 35 tD2 tD1 30 40 tD1 30 25 20 10 20 -60 -40 0 1 2 3 4 5 6 7 8 INPUT AMPLITUDE (V) FIGURE 2-13: Amplitude. 9 10 Propagation Delay vs. Input -20 0 FIGURE 2-16: Temperature. 20 40 TA (°C) 60 80 100 120 Propagation Delay vs. 103 10-6 IQUIESCENT (μA) A•sec VDD = 18V 10-7 INPUT = 1 102 INPUT = 0 10-8 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-17: vs. Temperature. 20 40 60 80 100 120 Quiescent Supply Current Crossover Energy vs. 6 6 5.5 5.5 5 5 4.5 4.5 TJ = 150°C 4 RDS(ON) (Ω) RDS(ON) (Ω) 0 TJ (°C) NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. FIGURE 2-14: Supply Voltage. -60 -40 -20 3.5 3 2.5 2 TJ = 150°C 3 2.5 2 TJ = 25°C 1.5 4 3.5 1.5 1 1 0.5 0.5 4 6 8 10 12 VDD (V) 14 16 FIGURE 2-15: High-State Output Resistance vs. Supply Voltage. 2005-2013 Microchip Technology Inc. 18 TJ = 25°C 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-18: Low-State Output Resistance vs. Supply Voltage. DS21934B-page 7 TC4421M/TC4422M 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 8-Pin CERDIP 3.1 PIN FUNCTION TABLE Symbol 1 VDD 2 INPUT Description Supply input, 4.5V to 18V Control input, TTL/CMOS-compatible input 3 NC 4 GND No connection Ground 5 GND Ground 6 OUTPUT 7 OUTPUT 8 VDD CMOS push-pull output CMOS push-pull output Supply input, 4.5V to 18V Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. 3.3 The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. DS21934B-page 8 CMOS Push-Pull Output Ground The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 2005-2013 Microchip Technology Inc. TC4421M/TC4422M 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 4.7 µF 1 0.1 µF 2 tD1 tD2 tF tR 90% 90% Output 8 0.1 µF Input +18V 10% 6 10% 10% 0V Inverting Driver TC4421M Output 7 CL = 10,000 pF +5V 90% Input 4 5 0V +18V Input: 100 kHz, square wave, tRISE = tFALL 10 nsec 10% tD1 90% tR Output 0V 10% tD2 90% tF 10% Non-Inverting Driver TC4422M FIGURE 4-1: Switching Time Test Circuits. 2005-2013 Microchip Technology Inc. DS21934B-page 9 TC4421M/TC4422M 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead CERDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Legend: XX...X Y YY WW NNN e3 * Note: DS21934B-page 10 Example: TC4421 e3 MJA^^256 0542 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2005-2013 Microchip Technology Inc. TC4421M/TC4422M 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 2 1 n D E A2 A c L B1 eB B A1 Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Standoff § Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030 A A1 E E1 D L c B1 B eB p MIN .160 .020 .290 .230 .370 .125 .008 .045 .016 .320 INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360 MAX .200 .040 .320 .300 .400 .200 .015 .065 .020 .400 MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15 MIN MAX 5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16 Drawing No. C04-010 2005-2013 Microchip Technology Inc. DS21934B-page 11 TC4421M/TC4422M NOTES: DS21934B-page 12 2005-2013 Microchip Technology Inc. TC4421M/TC4422M APPENDIX A: REVISION HISTORY Revision A (February 2005) • Original Release of this Document. Revision B (January 2013) Added a note to each package outline drawing. 2005-2013 Microchip Technology Inc. DS21934B-page 13 TC4421M/TC4422M NOTES: DS21934B-page 14 2005-2013 Microchip Technology Inc. TC4421M/TC4422M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XX Device and Temperature Range Package Examples: a) TC4421M: 9A High-Speed MOSFET Driver, Inverting, -55°C to +125°C TC4422M: 9A High-Speed MOSFET Driver, Non-Inverting, -55°C to +125°C Package: JA = Ceramic Dual In-Line (300 mil Body), 8-lead 2005-2013 Microchip Technology Inc. 9A High-Speed MOSFET Driver, Inverting, 8LD CERDIP package. a) Device and Temperature Range: TC4421MJA: TC4422MJA: 9A High-Speed MOSFET Driver, Non-Inverting, 8LD CERDIP package. DS21934B-page 15 TC4421M/TC4422M NOTES: DS21934B-page 16 2005-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769171 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2005-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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