MICROCHIP RE46C145E16F

RE46C145
CMOS Photoelectric Smoke Detector ASIC with Interconnect
and Timer Mode
Features:
General Description:
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The RE46C145 is a low-power, CMOS photoelectric-type smoke detector IC. With minimal external
components, this circuit will provide all the required features for a photoelectric-type smoke detector.
Internal Power On Reset
Low Quiescent Current Consumption
ESD Protection on all Pins
Interconnect up to 40 Detectors
10 Minute Timer for Sensitivity Control
Temporal Horn Pattern
Internal Low Battery and Chamber Test
Compatible with Allegro A5366
Alternate Diagnostic Mode
UL Recognized per File S24036
The design incorporates a gain-selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry for 100 µs every 10 seconds to keep
standby current to a minimum. If smoke is sensed, the
detection rate is increased to verify an Alarm condition.
A High Gain mode is available for push button chamber
testing.
In diagnostic mode, the photo amplifier output is available on pin 15 for production calibration of the photo
chamber.
When in Standby, a check for a low battery condition
and chamber integrity is performed every 43 seconds.
The temporal horn pattern supports the NFPA 72
emergency evacuation signal.
An interconnect pin allows multiple detectors to be connected such that when one units alarms, all units will
sound.
An internal 10 minute timer can be used for a reduced
sensitivity mode.
The RE46C145 is recognized by Underwriters
Laboratories for use in smoke detectors that comply
with specification UL217 and UL268.
Package Types
RE46C145
PDIP, SOIC, SOICN
 2009-2012 Microchip Technology Inc.
C1
1
16
TEST
C2
2
15
VSEN
DETECT
3
14
VSS
STROBE
4
13
ROSC
VDD
5
12
COSC
IRED
6
11
LED
IO
7
10
FEED
HORNB
8
9
HORNS
DS22181C-page 1
RE46C145
Functional Block Diagram
VDD (5)
Low Battery
IO (7)
+
-
FEED (10)
Horn Driver
HS (9)
+
VSEN (15)
Smoke Comparator
Logic and
Timing
HB (8)
LED (11)
V DD -3.5V
PHOTOAMP
DETECT (3)
Bias and
Power Reset
+
-
C1 (1)
IRED (6)
C2 (2)
ROSC (13)
Oscillator
COSC (12)
V DD -5V
STROBE (4)
TEST (16)
VSS (14)
Typical Application
C3
1 μF
9V
Battery
RADJ1
R3
8.2k
R2
5k
Push-to-Test
C1
.047 μF
C2
4700 pF
1
16
2
15
R12
10M
3
14
C5
1.5nF
4
13
R4
560
RADJ2
R1
4.7k
D6
R5
250k
R9
100k
Smoke Chamber
C4
100 μF
To Other Units
5
12
6
11
7
10
8
9
R7
22
R8
100
Note 1:
R13
330
Q3
D5
R6
1k
D3
C6
1.0nF
R11
220k
R10
1.5M
C3 should be located as close as possible to the device power pins.
2:
C3 is typical for an alkaline battery. This capacitance should be increased to 4.7 µF or greater for a carbon battery.
3:
R10, R11 and C6 are typical values and may be adjusted to maximize sound pressure.
DS22181C-page 2
 2009-2012 Microchip Technology Inc.
RE46C145
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings†
† Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operation listings of this specification is
not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
VDD....................................................................................15V
Input Voltage Range Except FEED, IO .......... VIN = -.3V to VDD +.3V
FEED Input Voltage Range ..................... VINFD =-10 to +22V
IO Input Voltage Range................................. VIO1= -.3 to 15V
Input Current except FEED ................................... IIN = 10 mA
Operating Temperature ................................TA = -25 to +75°C
Storage Temperature ............................TSTG = -55 to +125°C
Maximum Junction Temperature ......................... TJ = +150°C
DC ELECTRICAL CHARACTERISTICS
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25°C to +75°C, VDD = 9V
Symbol
Test
Pin
Supply Voltage
VDD
Supply Current
IDD1
Parameter
Input Voltage High
Input Voltage Low
Input Leakage Low
Note 1:
2:
3:
4:
Min
Typ
Max
Units
Conditions
5
6
—
12
V
Operating
5
—
4
6
µA
Configured as in Typical
Application, COSC = VSS,
LED off
IDD2
5
—
5.5
8
µA
Configured as in Typical
Application, VDD = 12V,
COSC = VSS
IDD3
5
—
—
2
mA
Configured as in Typical
Application, STROBE on,
IRED off, VDD=12V
IDD4
5
—
—
3
mA
Configured as in Typical
Application, STROBE on,
IRED on, VDD = 12V, Note 1
VIH1
10
6.2
—
—
V
FEED
VIH2
7
3.2
—
—
V
No Local Alarm, IO as Input
VIH3
15
1.6
—
—
V
VSEN
VIH4
16
8.5
—
—
V
TEST
VIL1
10
—
—
2.7
V
FEED
VIL2
7
—
—
1.5
V
No Local Alarm, IO as Input
VIL3
15
—
—
.5
V
VSEN
VIL4
16
—
—
7
V
TEST
IIL1
1,2,3
—
—
-100
nA
VDD = 12V, COSC = 12V,
STROBE active
IIL2
10,12
—
—
-100
nA
VDD = 12V, VIN = VSS
IIL3
15,16
—
—
-1
µA
VDD = 12V, VIN = VSS
ILFD
10
—
—
-50
µA
FEED = -10V
Does not include Q3 emitter current.
Not production tested.
Typical values are for design information and are not ensured.
Limits over the specified temperature range are not production tested and are based on characterization
data.
 2009-2012 Microchip Technology Inc.
DS22181C-page 3
RE46C145
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25°C to +75°C, VDD = 9V
Parameter
Input Leakage High
Input Pull Down Current
Symbol
Test
Pin
Min
Typ
Max
Units
IIH1
1,2
—
—
100
nA
VDD = 12V, VIN = VDD,
STROBE active
IIH2
3,10,12
—
—
100
nA
VDD = 12V, VIN = VDD
IHFD
10
—
—
50
µA
FEED = 22V
IPD1
16
.25
—
10
µA
VIN = VDD
IPD2
15
.1
.25
.5
µA
VIN = VDD
IPDIO1
7
20
—
80
µA
VIN = VDD
Conditions
IPDIO2
7
—
—
140
µA
VIN = 15V, VDD = 12
Output Leakage
Current Low
IOZL1
11,13
—
—
-1
µA
Output Off, Output = VSS
Output Leakage
Current High
IOZH1
11,13
—
—
1
µA
Output Off, Output = VDD
Output Voltage Low
VOL1
8,9
—
—
1
V
Iol = 16 mA, VDD = 6.5V
VOL2
13
—
.5
—
V
Iol = 5 mA, VDD = 6.5V
.6
VOL3
11
—
—
Output Voltage High
VOH1
8,9
5.5
—
V
Iol = 10 mA, VDD = 6.5V
V
Iol = -16 mA, VDD = 6.5V
Output Current
IIOH1
7
-4
—
-16
mA
Alarm, VIO = VDD–2V or
VIO = 0V
IIODMP
7
5
—
—
mA
At Conclusion of Local Alarm
or Test, VVIO = 1V
Low Battery
Alarm Voltage
VLB
5
6.9
7.2
7.5
V
Output Voltage
VSTOF
4
VDD–.1
—
—
V
STROBE off, VDD = 12V,
IOUT = -1 µA
VSTON
4
VDD–
5.25
V
STROBE on, VDD = 9V
IOUT = 100 µA to 500 µA
VIREDOF
6
—
—
.1
V
IRED off, VDD = 12V,
IOUT = 1 µA
VIREDON
6
2.85
3.1
3.35
V
IRED on, VDD = 9V
IOUT = 0 to -6 mA, TA = +25°C
Common Mode Voltage
VCM1
1,2,3
.5
—
VDD–2
V
Local smoke,
Push to Test or Chamber Test,
Note 2
Smoke Comparator
Reference
VREF
-
VDD–3.7
—
VDD–3.3
V
Internal Reference
Temperature Coefficient
TCST
4
—
.01
—
%/ºC VDD = 6V to 12V,
STROBE Output Voltage
TCIRED
6
—
.3
—
%/ºC VDD = 6V to 12V,
IRED Output Voltage
VSTON
4,5
—
-50
—
dB
Active, VDD =6V to 12V
VIREDON
6,5
—
-30
—
dB
Active, VDD = 6V to 12V
Line Regulation
Note 1:
2:
3:
4:
VDD–5 VDD–4.75
Does not include Q3 emitter current.
Not production tested.
Typical values are for design information and are not ensured.
Limits over the specified temperature range are not production tested and are based on characterization
data.
DS22181C-page 4
 2009-2012 Microchip Technology Inc.
RE46C145
AC ELECTRICAL CHARACTERISTICS
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25°C to +75°C, VDD = 9V,
VSS = 0V, Component Values from Typical Application; R9 = 100 K, R12 = 10 M, C5 = 1.5 nF
Parameter
Oscillator Period
LED and STROBE
On Time
LED Period
STROBE
and IRED Pulse
Period
Test
Pin
Min
Typ
TPOSC
12
9.4
10.5
11.5
ms
No alarm condition
TON1
11,4
9.4
10.5
11.5
ms
Operating
TPLED1
11
39
43
47
s
TPLED2
11
.45
.5
.55
s
Local alarm condition
TPLED3
11
9.6
10.75
11.8
s
Timer mode, no local alarm
TPLED4
11
s
Remote alarm only
Symbol
Max
LED IS NOT ON
Units
Test Conditions
Standby, no alarm
TPER1
4,6
9.6
10.75
11.8
s
Standby, no alarm
TPER1A
4,6
1.8
2
2.2
s
Standby, after one valid smoke
sample
TPER1B
4,6
.9
1
1.1
s
Standby, after two consecutive
valid smoke samples
TPER2
4,6
.9
1
1.1
s
In Local Alarm (three consecutive valid smoke samples)
TPER3
4,6
7.2
8
8.9
s
In Remote Alarm
TPER4
4,6
300
336
370
ms
Push-button test
TPER5
4,6
39
47
s
Chamber Test or Low Battery
Test, no alarms
IRED On Time
TON2
6
94
104
115
µs
Operating
Horn On Time
THON1
8,9
450
500
550
ms
Operating, alarm condition,
Note 1
THON2
8,9
9.5
10.5
11.5
ms
Low Battery or Failed Chamber
test , no alarm
THOF1
8,9
450
500
550
ms
Operating, alarm condition,
Note 1
THOF2
8,9
1.35
1.5
1.65
s
Operating, alarm condition,
Note 1
THOF3
8,9
39
43
47
s
Low Battery or Failed Chamber
test, no alarm
IO Charge
Dump Duration
TIODMP
7
.9
1.46
s
At the conclusion of the Local
Alarm or Test
IO Delay
TIODLY1
7
s
From start of Local Alarm to
IO Active
IO Filter
TIOFILT
7
600
mSs
IO pulse-width ensured to be
filtered. IO as input, no local
alarm
Remote
Alarm Delay
TIODLY2
7
2.0
s
Timer Period
TTPER
10
Min
Horn Off Time
Note 1:
2:
3:
4:
0
1.05
7
8.5
No local alarm, from IO Active
to Horn Active
No alarm condition, Note 2
See timing diagram for Horn Temporal Pattern
During the Timer mode, the LED period is 10.5 seconds. The LED period will return to 43 seconds at the
conclusion of the Timer mode.
TPOSC and TON2 are 100% production tested. All other timing is ensured by functional testing.
Typical values are for design information and are not ensured.
 2009-2012 Microchip Technology Inc.
DS22181C-page 5
RE46C145
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = 9V, VSS = 0V
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
TA
-25
—
+75
°C
TSTG
-55
—
+125
°C
Thermal Resistance, 16L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 16L-SOIC (150 mil.)
θJA
—
86.1
—
°C/W
Thermal Resistance, 16L-SOIC (300 mil.)
θJA
—
80
—
°C/W
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
DS22181C-page 6
 2009-2012 Microchip Technology Inc.
RE46C145
2.0
PIN DESCRIPTION
The descriptions of the pins are listed in .
TABLE 2-1:
PIN FUNCTION TABLE
RE46C145
PDIP, SOIC, SOICN
Symbol
1
C1
High Gain Capacitor Pin
2
C2
Normal Gain Capacitor Pin
3
DETECT
4
STROBE
5
VDD
Positive Power Supply
6
IRED
Infrared Emitting Diode Pin
7
IO
8
HB
Horn Brass, Inverted Output
9
HS
Horn Silver Output
10
FEED
11
LED
12
COSC
Oscillator Capacitor Input
13
ROSC
Oscillator Resistor Drive Low
2.1
Function
Photo Diode Input
Strobed Detection Negative Supply
Interconnect Pin
Horn Feedback Pin
LED Driver Pin
Negative Power Supply
14
VSS
15
VSEN
HushTimer Sensitivity Pin
16
TEST
Test Pin
High/Normal Gain Capacitor Pins
(C1, C2)
The capacitor connected to C1 pin sets the photo
amplifier gain (high) for the push-to-test and chamber
sensitivity test. The size of this capacitor will depend on
the chamber background reflections. A = 1+(C1/10),
where C1 is expressed in pF. The gain should be
<10000.
The capacitor connected to C2 pin sets the photo
amplifier gain (normal) during standby. The value of this
capacitor will depend on the smoke sensitivity required.
A = 1+(C2/10), where C2 is expressed in pF.
2.2
Positive Power Supply (VDD)
The VDD pin is the device’s positive power supply input.
2.5
Infrared Emitting Diode Pin (IRED)
Provides a regulated pulsed output voltage pre-driver
for the infrared emitter. This output usually drives the
base of an NPN transistor.
2.6
Interconnect Pin (IO)
This bidirectional pin provides the capability to
interconnect many detectors in a single system. This
pin has an internal pull-down device.
Photo Diode Input (DETECT)
This input is normally connected to the cathode of an
external photo diode operated at zero bias.
2.3
2.4
Strobed Detection
Negative Supply (STROBE)
Regulated output voltage of VDD-5 which is active
during a test for smoke. This output is the negative side
of the photo amplifier reference circuitry.
 2009-2012 Microchip Technology Inc.
2.7
Horn Brass, Inverted Output (HB)
HB pin is connected to the metal electrode of a
piezoelectric transducer.
2.8
Horn Silver Output Pin (HS)
HS pin is a complementary output to HB and connects
to the ceramic electrode of the piezoelectric transducer.
DS22181C-page 7
RE46C145
2.9
Horn Feedback Pin (FEED)
Usually this pin is connected to the feedback electrode
through a current limiting resistor. If not used, this pin
must be connected to VDD or VSS.
2.10
LED Driver Pin (LED)
This pin is an open drain NMOS output used to drive a
visible LED.
2.11
Oscillator Capacitor Input (COSC)
A capacitor connected to this pin, with a parallel
resistor, sets the internal clock low time, which is
approximately the clock period.
2.12
Oscillator Resistor Drive Low
(ROSC)
A resistor between this pin and COSC pin sets the
internal clock high time. This also sets the IRED pulse
width (100 - 200 µs).
2.13
Hush Timer Sensitivity Pin (VSEN)
In Timer mode, this input pin can be used to set an
external smoke comparator reference.
2.14
TEST Pin
This input is used to invoke two test modes and the
Timer mode. This input has an internal pull-down.
DS22181C-page 8
 2009-2012 Microchip Technology Inc.
RE46C145
3.0
Note:
3.1
DEVICE DESCRIPTION
All timing references are nominal. See
Electrical Characteristics for limits.
Standby Internal Timing
With the external components specified in the Typical
Application for R12 and C5, the internal oscillator has a
nominal period of 10 ms. Normally the analog circuitry
is powered down to minimize standby current (typically
4 µA at 9V). Once every 10 seconds the detection
circuitry (normal gain) is powered up for 10 ms. Prior to
completion of the 10 ms period, the IRED pulse is
active for 100 µs. At the conclusion of the 10 ms period,
the photo amplifier is compared to an internal reference
to determine the chamber status and latched. If a
smoke condition is present, the period to the next
detection decreases and additional checks are made.
Three consecutive smoke detections will cause the
device to go into alarm, and the horn circuit and
interconnect will be active.
Once every 43 seconds the status of the battery voltage is checked. This status is checked and latched at
the conclusion of the LED pulse. In addition, once
every 43 seconds the chamber is activated and, using
the high gain mode (capacitor C1), a check of the
chamber is made by amplifying background reflections.
If either the low battery or the photo chamber test fails,
the horn will chirp for 10 ms every 43 seconds.
The oscillator period is determined by the values of R9,
R12 and C5 (see Typical Application). The oscillator
period is as follows:
EQUATION 3-1:
T = TR + TF
Where:
TR = .6931 x R12 x C5
TF = .6931 x R9 x C5
3.2
Smoke Detection Circuitry
A comparator compares the photo amp output to an
internal reference voltage. If the required number of
consecutive smoke conditions is met, the device will go
into local alarm and the horn will be active. In local
alarm, the C2 gain is internally increased by
approximately 10% to provide alarm hysteresis.
 2009-2012 Microchip Technology Inc.
3.3
Push-to-Test Operation
If the TEST input pin is activated (VIH), after one
internal clock cycle, the smoke detection rate increases
to once every 330 ms. In this mode, the high-gain
capacitor C1 is selected, and background reflections
are used to simulate a smoke condition. After the
required consecutive detections, the device will go into
a local alarm condition. When the TEST input is
deactivated (VIL) and after one clock cycle, the normal
gain capacitor C1 is selected. The detection rate
continues at once every 330 ms until three consecutive
no smoke conditions are detected. At this point, the
device returns to standby timing.
3.4
LED Operation
In standby, the LED is pulsed on for 10 ms every
43 seconds. In a local alarm condition or the push-totest alarm, the LED pulse frequency is increased to
once every .5 seconds. In the case of a remote alarm,
the LED is not active. In the Timer mode of operation,
the LED is pulsed on for 10 ms every 10 seconds.
3.5
Interconnect Operation
The bidirectional I/O pin allows for interconnection of
multiple detectors. In a local alarm condition, this pin is
driven high immediately through a constant current
source. Shorting this output to ground will not cause
excessive current. The I/O is ignored as an input during
a local alarm.
The I/O pin also has an NMOS discharge device that is
active for 1 second after the conclusion of any type of
local alarm. This device helps to quickly discharge any
capacitance associated with the interconnect line.
If a remote active-high signal is detected, the device
goes into remote alarm and the horn will be active.
Internal protection circuitry allows for the signaling unit
to have a higher supply voltage than the signaled unit,
without excessive current draw.
The interconnect input has a 670 ms nominal digital
filter. This allows for interconnection to other types of
alarms (carbon monoxide, for example) that may have
a pulsed interconnect signal.
DS22181C-page 9
RE46C145
3.6
Low Battery Detection
In standby, an internal reference is compared to the
voltage divided VDD supply. A low battery status is
latched at the conclusion of the LED pulse. The horn
will chirp for 10 ms every 43 seconds, until the low
battery condition no longer exists. The low battery test
is not performed in a local or remote alarm condition.
3.8
Timer Mode
The low battery notification does not sound in a local or
remote alarm condition.
If resistors RADJ1 and RADJ2 are in place and a high-tolow transition occurs on the TEST input, the device
enters a 10 minute timer mode. In this mode, the
smoke comparator reference is switched from the
internal VDD - 3.5V reference to the voltage that
appears on VSEN (pin 15). This allows the sensitivity to
be modified for the duration of the 9 minute timer
period. The chamber test is performed in Timer mode.
3.7
If VSEN is left unconnected or tied to VSS, the Timer
mode of operation is inhibited.
Chamber Fail Detection
In standby, a chamber test is also performed every
43 seconds, by switching to the high gain capacitor C1
and sensing the photo chamber background
reflections. Two consecutive chamber test failures will
also cause the horn to chirp for 10 ms every
43 seconds. The low battery chirp occurs just before
the LED pulse (see Figure 3-1). The chamber test and
chamber test failure chirp occurs approximately
21 seconds after the LED pulse. The chamber tests are
not performed in a local or remote alarm condition.
The chamber fail notification does not sound in a local
or remote alarm condition.
TABLE 3-1:
3.9
Diagnostic Mode
In addition to the normal function of the TEST input, a
special diagnostic mode is available to calibrate and
test of the smoke detector. Taking the TEST pin below
VSS and sourcing ~200 µA out of the pin for 1 clock
cycle will enable the diagnostic mode. In the diagnostic
mode, some of the pin functions are redefined. Refer to
Table 3-1 for redefined pin functions in the diagnostic
mode. In addition, in this mode STROBE is always
enabled, and the IRED is pulsed at the clock rate of
10 ms nominal.
DIAGNOSTIC MODE PIN FUNCTION
Pin Name
Pin
Number
IO
7
The IO pin (7) controls the gain capacitor used for the photo amplifier. If IO is low, then
normal gain is selected. If IO is high, then high gain is selected.
VSEN
15
In Diagnostic mode, the output of the photo amplifier is gated to this pin and the pulldown device is disabled. .
FEED
10
If the IO pin (7) is low, then taking this input high will enable hysteresis, which is a
nominal 10% gain increase in Normal Gain mode.
COSC
12
If desired, this pin can be driven by an external clock.
HORNB
8
This pin becomes the smoke integrator output. A high level indicates that an alarm
condition has been detected.
LED
11
The LED pin is used as a low battery indicator. For VDD above the low battery threshold, the open drain NMOS is off. If VDD falls below the threshold, the NMOS turns on.
DS22181C-page 10
Function
 2009-2012 Microchip Technology Inc.
RE46C145
Standby, No Alarm (not to scale)
Oscillator
TPOSC
TPWOSC
Internal Clock
TON1
TPER1
STROBE
TON2
IRED
TPLED1
LED
Low Supply or Chamber Test Failure
LED
THON3
Low BatteryTest
Low BatteryWarning Chirp
Low Battery Warning Chirp
Horn
THOF3
Chamber Test and Warning is Offset from Low Battery Test and Warning by 21.5 Seconds.
FIGURE 3-1:
RE46C145 Timing Diagram – Standby, Low Supply and Chamber Test Failure.
 2009-2012 Microchip Technology Inc.
DS22181C-page 11
RE46C145
Local Alarm Timing (not to scale)
TPER2
STROBE
IRED
TPLED2
LED
No Alarm
Local or Remote Alarm
No Alarm
Horn Temporal Pattern
THON1
THOF1
THOF2
Horn
Interconnect Timing
TIODLY1
IO as Output
TIOFILT
TIODLY2
IO as Input
Note 1: Smoke is not sampled when the horn is active. Horn cycle is self completing in local alarm, but not in
remote alarm.
2: Low battery warning chirp is suppressed in local or remote alarm.
3: IO Dump active only in local alarm, inactive if external alarm.
FIGURE 3-2:
DS22181C-page 12
RE46C145 Timing Diagram – Local Alarm, Horn and Interconnect Timings.
 2009-2012 Microchip Technology Inc.
RE46C145
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
16-Lead PDIP (300 mil)
Example
RE46C145-V/P^^
e3
1220256
16-Lead Narrow SOIC (3.90 mm)
Example
RE46C145
V/SL^^
e3
1220256
16-Lead Wide SOIC (7.50 mm)
Example
RE46C145
V/SO^^
e3
1220256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2009-2012 Microchip Technology Inc.
DS22181C-page 13
RE46C145
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DS22181C-page 14
 2009-2012 Microchip Technology Inc.
RE46C145
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2009-2012 Microchip Technology Inc.
DS22181C-page 15
RE46C145
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22181C-page 16
 2009-2012 Microchip Technology Inc.
RE46C145
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2009-2012 Microchip Technology Inc.
DS22181C-page 17
RE46C145
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22181C-page 18
 2009-2012 Microchip Technology Inc.
RE46C145
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2009-2012 Microchip Technology Inc.
DS22181C-page 19
RE46C145
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DS22181C-page 20
 2009-2012 Microchip Technology Inc.
RE46C145
APPENDIX A:
REVISION HISTORY
Revision C (August 2012)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Re-structured the entire document.
Moved Functional Block Diagram and Typical
Application figures to the front pages.
Added Temperature Characteristics table.
Reorganized Section 2.0, Pin Description. Simplified Table 2-1, added description sections.
Added Section 4.0, Packaging Information.
Added Product Identification System section.
Revision B (October 2009)
• Undocumented changes.
Revision A (May 2009)
• Original Release of this Document.
 2009-2012 Microchip Technology Inc.
DS22181C-page 21
RE46C145
NOTES:
DS22181C-page 22
 2009-2012 Microchip Technology Inc.
RE46C145
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
/X
Device Package Number
of Pins
Device
RE46C145:
RE46C145T:
Package
E
S
=
=
SW
=
CMOS Photoelectric Smoke Detector ASIC
CMOS Photoelectric Smoke Detector ASIC
(Tape and Reel, SOIC only)
Examples:
a)
b)
c)
RE46C145E16F:
RE46C145S16F:
RE46C145S16TF:
d)
e)
RE46C145SW16F:
RE46C145SW16TF:
16LD PDIP Package
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
Plastic Dual In-Line, 300 mil. Body, 16-Lead (PDIP)
Small Plastic Outline - Narrow, 3.90 mm Body,
16-Lead (SOIC)
Small Plastic Outline - Wide, 7.50 mm Body,
16-Lead (SOIC)
 2009-2012 Microchip Technology Inc.
DS22181C-page 23
RE46C145
NOTES:
DS22181C-page 24
 2009-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-468-8
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2009-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS22181C-page 25
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS22181C-page 26
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
11/29/11
 2011 Microchip Technology Inc.