BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 3 BASE 1 EMITTER TO−92 CASE 29 STYLE 14 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAMS BC 640 AYWW G G BC64 0−16 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 0 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC640/D BC640, BC640−16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −80 − − −80 − − −5.0 − − Vdc − − − − −100 −10 nAdc mAdc 25 40 100 25 − − − − − 160 250 − − − −0.25 −0.5 −0.5 − − − −1.0 − 150 − − 9.0 − − 110 − OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0, TA = 125°C) Vdc Vdc ICBO ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −5.0 mAdc, VCE = −2.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) hFE BC640 BC640−16 (IC = −500 mA, VCE = −2.0 V) Collector − Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base − Emitter On Voltage (IC = −500 mAdc, VCE = −2.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cib MHz pF pF 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping BC640G Device TO−92 (Pb−Free) 5000 Units / Bulk BC640ZL1G TO−92 (Pb−Free) 2000 Units / Ammo Box TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk BC640−16 BC640−16G http://onsemi.com 2 BC640, BC640−16 500 −1000 −200 −100 −50 VCE = −2 V SOA = 1S −B PD TA 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) −500 PD TC 25°C −20 −10 −5 −2 −1 −1 BC636 BC638 BC640 PD TA 25°C PD TC 25°C 200 −A 50 20 −2 −3 −4 −5 −7 −10 −20 −30−40 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −L 100 −1 −3 −5 −300 −500 −1000 Figure 2. DC Current Gain 500 −1 300 V, VOLTAGE (VOLTS) −0.8 VCE = −2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = −2 V −0.6 −0.4 −0.2 VCE(sat) @ IC/IB = 10 20 −1 −10 −100 IC, COLLECTOR CURRENT (mA) 0 −1000 −1 Figure 3. Current Gain Bandwidth Product −10 −100 IC, COLLECTOR CURRENT (mA) Figure 4. “Saturation” and “On” Voltages −0.2 θV, TEMPERATURE COEFFICIENTS (mV/°C) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area −10 −30 −50 −100 IC, COLLECTOR CURRENT (mA) −1.0 VCE = −2 VOLTS DT = 0°C to +100°C −1.6 −2.2 qV for VBE −1 −3 −5 −10 −30 −50 −100 IC, COLLECTOR CURRENT (mA) −300 −500 −1000 Figure 5. Temperature Coefficients http://onsemi.com 3 −1000 BC640, BC640−16 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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