BC560C Low Noise Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −100 mAdc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM BC56 0C AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 4 1 Package Shipping BC560CG TO−92 (Pb−Free) 5000 Units / Bulk BC560CZL1G TO−92 (Pb−Free) 2000 / Ammo Pack Publication Order Number: BC560C/D BC560C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −45 − − −50 − − −5.0 − − Vdc − − − − −15 −5.0 nAdc mAdc − − −15 100 380 270 500 − 800 − − − −0.075 −0.3 −0.25 −0.25 −0.6 − − −1.1 − − − −0.55 −0.52 −0.55 −0.62 − − −0.7 − 250 − − 2.5 − 450 600 900 − − 0.5 − 2.0 10 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0, TA = +125°C) ICBO Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) IEBO Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = (Note 1) (IC = −100 mAdc, IB = −5.0 mAdc, (Note 2) VCE(sat) Base −Emitter Saturation Voltage (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) Base−Emitter On Voltage (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) − Vdc Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccbo Small−Signal Current Gain (IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz) hfe Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz) 1. IB is value for which IC = −11 mA at VCE = −1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%. http://onsemi.com 2 NF1 NF2 MHz pF − dB BC560C -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 0 -0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = -10 V TA = 25°C 40 30 TA = 25°C Cib 5.0 3.0 Cob 2.0 20 -0.5 -0.7 -1.0 -2.0 -5.0 -7.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 -1.0 -2.0 -4.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current−Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 Figure 4. Capacitance 170 160 150 VCE = -10 V f = 1.0 kHz TA = 25°C 140 130 120 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 -10 -20 -40 BC560C PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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