MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Collector −Emitter Voltage MMBTA42, SMMBTA42 MMBTA43 VCEO Collector −Base Voltage MMBTA42, SMMBTA42 MMBTA43 VCBO Emitter−Base Voltage MMBTA42, SMMBTA42 MMBTA43 VEBO Collector Current − Continuous Value Unit 3 Vdc 300 200 1 2 Vdc 300 200 SOT−23 (TO−236) CASE 318 STYLE 6 Vdc 6.0 6.0 IC 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 12 1 1D M G G 1 M1E M G G 1 1D = MMBTA42LT, SMMBTA42L M1E = MMBTA43LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MMBTA42LT1/D MMBTA42L, SMMBTA42L, MMBTA43L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 25 40 − − 40 40 − − − − 0.5 0.5 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) MMBTA42, SMMBTA42 MMBTA43 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBTA42, SMMBTA42 MMBTA43 Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MMBTA42, SMMBTA42 MMBTA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MMBTA42, SMMBTA42 MMBTA43 ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Both Types Both Types (IC = 30 mAdc, VCE = 10 Vdc) MMBTA42, SMMBTA42 MMBTA43 Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42, SMMBTA42 MMBTA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE VCE(sat) − Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42, SMMBTA42 MMBTA43 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 Ccb pF MMBTA42L, SMMBTA42L, MMBTA43L TYPICAL CHARACTERISTICS 1000 1.2 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V TJ = 150°C 25°C 100 −55°C 10 0.1 1 10 100 −55°C 1 10 100 Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current −55°C 25°C 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 1 10 100 1.0 0.9 0.8 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current Figure 4. Base−Emitter On Voltage vs. Collector Current 0 −0.4 100 VCE = 10 V −0.8 −1.2 −1.6 −2.0 qVB, for VBE 10 Cobo 1 −55°C to 150°C −2.4 −2.8 0.1 TJ = 25°C f = 1 MHz Cibo C, CAPACITANCE (pF) qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.2 Figure 1. DC Current Gain 0.5 0.4 25°C 0.4 IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.6 0.6 IC, COLLECTOR CURRENT (mA) 0.9 0.7 150°C 0.8 0.0 0.1 1.0 0.8 IC/IB = 10 1.0 1 10 100 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Capacitance http://onsemi.com 3 1000 MMBTA42L, SMMBTA42L, MMBTA43L 100 1 VCE = 20 V TJ = 25°C 10 1 10 IC, COLLECTOR CURRENT (A) fTau, CURRENT−GAIN BANDWIDTH (MHz) TYPICAL CHARACTERISTICS 1.0 s 0.01 0.001 100 10 ms 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Current−Gain — Bandwidth Product Figure 8. Safe Operating Area http://onsemi.com 4 1000 MMBTA42L, SMMBTA42L, MMBTA43L ORDERING INFORMATION Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA42LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBTA42LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA43LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MMBTA42L, SMMBTA42L, MMBTA43L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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