EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. (3) (2) (1) Features • Lead−Free Solder Plating • Low VCE(SAT), t0.5 V • These are Pb−Free Devices Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Collector Current − Continuous Symbol Total Device Dissipation TA = 25°C Max Unit PD mW 357 (Note 1) 2.9 (Note 1) Derate above 25°C MARKING DIAGRAM mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C PD mW/°C Thermal Resistance, Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1 3T = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. © Semiconductor Components Industries, LLC, 2005 3T M G G mW 500 (Note 1) 4.0 (Note 1) Derate above 25°C November, 2005 − Rev. 1 1 SOT−563 CASE 463A STYLE 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) 6 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: EMT1DXV6T1/D EMT1DXV6T1, EMT1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) IEBO − − −0.5 mA − − −0.5 120 − 560 − 140 − − 3.5 − Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Vdc hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) COB MHz pF 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Package Shipping † EMT1DXV6T1 SOT−563* 4000 Units / Tape & Reel EMT1DXV6T1G SOT−563* 4000 Units / Tape & Reel EMT1DXV6T5 SOT−563* 8000 Units / Tape & Reel EMT1DXV6T5G SOT−563* 8000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 EMT1DXV6T1, EMT1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS TA = 25°C 120 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 mA 250 200 60 150 IB = 50 mA 0 3 6 9 12 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE Figure 2. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) C ob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) 1000 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMT1DXV6T1, EMT1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 3 E −Y− HE b 65 PL 0.08 (0.003) DIM A b C D E e L HE C M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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