MSB92WT1, MSB92AWT1 Preferred Device PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO −300 Vdc Collector-Emitter Voltage V(BR)CEO −300 Vdc Emitter-Base Voltage V(BR)EBO −5.0 Vdc IC 500 mAdc ESD MBMu16,000, MMu2,000 V Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Collector Current − Continuous Electrostatic Discharge 1 BASE 3 SC−70 (SOT−323) CASE 419 STYLE 3 1 2 THERMAL CHARACTERISTICS Rating 2 EMITTER MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. xx M G G 1 xx = Device Code x= 2D or D2 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping † MSB92WT1 SC−70/ SOT−323 3000/Tape & Reel MSB92WT1G SC−70/ SOT−323 (Pb−Free) 3000/Tape & Reel MSB92AWT1 SC−70/ SOT−323 3000/Tape & Reel MSB92AWT1G SC−70/ SOT−323 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 6 1 Publication Order Number: MSB92WT1/D MSB92WT1, MSB92AWT1 ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Characteristic V(BR)CEO −300 − Vdc Collector-Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −300 − Vdc Emitter-Base Breakdown Voltage (IE = −100 mAdc, IE = 0) V(BR)EBO −5.0 − Vdc Collector-Base Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO − −0.25 mA Emitter−Base Cutoff Current (VEB = −3.0 Vdc, IB = 0) IEBO − −0.1 mA hFE1 hFE1 hFE2 hFE3 25 120 40 25 − 200 − − Collector-Emitter Saturation Voltage (Note 2) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc fT 50 − MHz Ccb − 6.0 pF DC Current Gain (Note 2) MSB92WT1: (VCE = −10 Vdc, IC = −1.0 mAdc) MSB92AWT1: (VCE = −10 Vdc, IC = −1.0 mAdc) (VCE = −10 Vdc, IC = −10 mAdc) (VCE = −10 Vdc, IC = −30 mAdc) − SMALL SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 MSB92WT1, MSB92AWT1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. “ON” Voltages http://onsemi.com 3 MSB92WT1, MSB92AWT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 3 DIM A A1 A2 b c D E e e1 L HE E HE 1 2 b e A 0.05 (0.002) c A2 L A1 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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