NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. •Reduces Board Space •High hFE, 210-460 (Typical) •Low VCE(sat), < 0.5 V •ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V •Available in 4 mm, 8000 Unit Tape & Reel •This is a Pb-Free Device http://onsemi.com PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO -60 Vdc Collector-Emitter Voltage V(BR)CEO -50 Vdc Emitter-Base Voltage V(BR)EBO -6.0 Vdc IC -100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 265 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg -55 ~ +150 °C Rating Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. MARKING DIAGRAM 3 SOT-723 CASE 631AA 9F M 2 1 9F = Specific Device Code M = Date Code ORDERING INFORMATION Device NS2029M3T5G Package Shipping† SOT-723 (Pb-Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 0 1 Publication Order Number: NS2029M3/D NS2029M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = -50 mAdc, IE = 0) V(BR)CBO -60 - - Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -50 - - Vdc Emitter-Base Breakdown Voltage (IE = -50 mAdc, IE = 0) V(BR)EBO -6.0 - - Vdc ICBO - - -0.5 nA IEBO - - -0.1 Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -7.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 2) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = -6.0 Vdc, IC = -1.0 mAdc) - - -0.5 120 - 560 - 140 - - 3.5 - hFE Transition Frequency (VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz) - fT Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1.0 MHz) COB 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 mA Vdc MHz pF NS2029M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = 10 V 90 300 mA 250 200 60 150 IB = 50 mA 0 3 6 9 12 10 0.1 15 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. IC - VCE Figure 2. DC Current Gain 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR‐EMITTER VOLTAGE (V) 1 VCE, COLLECTOR VOLTAGE (V) 2 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) C ob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = - 25°C 100 100 30 0 TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 25°C 120 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 NS2029M3T5G PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -XD A b1 -Y3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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