mESD3.3ST5G SERIES ESD Protection Diodes In Ultra Small SOD-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. http://onsemi.com 1 Specification Features: •Small Body Outline Dimensions: PIN 1. CATHODE 2. ANODE 0.055″ x 0.024″ (1.40 mm x 0.60 mm) •Low Body Height: 0.020″ (0.5 mm) •Stand-off Voltage: 3.3 V - 12 V •Low Leakage •Response Time is Typically < 1 ns •ESD Rating of Class 3 (> 16 kV) per Human Body Model •IEC61000-4-2 Level 4 ESD Protection •IEC61000-4-4 Level 4 EFT Protection •These are Pb-Free Devices MARKING DIAGRAM XX = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any ORDERING INFORMATION Device QUALIFIED MAX REFLOW TEMPERATURE: 260°C mESDxxST5G Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Air Contact Value Unit ±30 ±30 kV IEC 61000-4-4 (EFT) 40 A ESD Voltage 16 400 kV V 150 mW TJ, Tstg -55 to +150 °C TL 260 °C Per Human Body Model Per Machine Model Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) XX MG G SOD-723 CASE 509AA Mechanical Characteristics: CASE: Void‐free, transfer‐molded, thermosetting plastic IEC 61000-4-2 (ESD) 2 ⎪ PD Package Shipping† SOD-723 (Pb-Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 3 1 Publication Order Number: UESD3.3ST5G/D mESD3.3ST5G SERIES ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR Working Peak Reverse Voltage Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation V IR VF IT Breakdown Voltage @ IT IT C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM IPP Max. Capacitance @VR = 0 and f = 1 MHz Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) Device* Device Marking VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT VC (V) @ Max IPP† IPP (A)† Ppk (W)† C (pF) Max Max Min mA Max Max Max Typ mESD3.3ST5G E0 3.3 2.5 5.0 1.0 10.9 10.4 113 80 mESD5.0ST5G E2 5.0 1.0 6.2 1.0 13.3 8.8 117 65 mESD12ST5G E3 12 1.0 13.5 1.0 23.7 5.4 128 30 *Other voltages available upon request. †Surge current waveform per Figure 1. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 60 t, TIME (ms) Figure 1. 8 x 20 ms Pulse Waveform http://onsemi.com 2 80 mESD3.3ST5G SERIES 7.4 20 7.3 18 7.2 16 7.1 7.0 14 mESDxxST5G IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) TYPICAL CHARACTERISTICS 6.9 6.8 12 10 8 6.7 6.6 6 6.5 4 6.4 2 6.3 -55 0 -55 +150 +25 TEMPERATURE (°C) Figure 2. Typical Breakdown Voltage versus Temperature mESDxxST5G +25 TEMPERATURE (°C) +150 Figure 3. Typical Leakage Current versus Temperature Figure 4. Positive 8 kV contact per IEC 6100-4-2 - mESD5.0ST5G Figure 5. Negative 8 kV contact per IEC 61000-4-2 - mESD5.0ST5G http://onsemi.com 3 mESD3.3ST5G SERIES PACKAGE DIMENSIONS SOD-723 CASE 509AA-01 ISSUE O -X- D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. -YE b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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