NUP4060AXV6 4−Line Transient Voltage Suppressor Array This 4−line voltage transient suppressor array is designed for application requiring transient voltage protection capability. It is intended for use in over−transient voltage and ESD sensitive equipment such as cell phones, portables, computers, printers and other applications. This device features a common cathode design which protects four independent lines in a single SOT−563 package. http://onsemi.com SOT−563 4−LINE TRANSIENT VOLTAGE SUPPRESSOR Features • Protects up to 4 Lines in a Single SOT−563 Package • ESD Rating: IEC61000−4−2: Level 4 • • • PIN ASSIGNMENT Contact (8 kV), Air (15 kV) VCC Pin = 16 V Protection D1, D2, and D3 Pins = 6.8 V Protection Low Capacitance (< 7 pF @ 3 V) for D1, D2, and D3 This is a Pb−Free Device D1 1 6 GND D2 2 5 D3 3 4 GND VCC Applications • • • • MARKING DIAGRAM Hand Held Portable Applications USB Interface Notebooks, Desktops, Servers SIM Card Protection SOT−563 CASE 463A STYLE 6 6 1 MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK 1 Rating Value Unit Peak Power Dissipation VCC Diode 8x20 msec double exponential waveform, (Note 1) D1, D2, and D3 200 W 20 W 1 MT MG G MT = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TJ Operating Junction Temperature Range −40 to 125 °C TSTG Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature – Maximum (10 seconds) 260 °C NUP4060AXV6T1G SOT−563 4000/Tape & Reel (Pb−Free) ESD IEC 61000−4−2 Air IEC 61000−4−2 Contact 15000 8000 V †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 1. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 1 1 Device Package Shipping† Publication Order Number: NUP4060/D NUP4060AXV6 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit VRWM − − 5.0 V IT = 1 mA, (Note 3) VBR 6.2 6.8 7.2 V Breakdown Voltage (VCC) IT = 5 mA, (Note 3) VBR2 15.3 16 17.1 V Reverse Leakage Current (D1, D2, and D3) VRWM = 3 V IR − 0.01 0.5 mA Reverse Leakage Current (VCC) VBR = 11 V IR − − 0.05 mA Capacitance (D1, D2, and D3) VR = 3 V, f = 1 MHz (Line to GND) CJ − 7 10 pF Reverse Working Voltage (D1, D2, and D3) (Note 2) Breakdown Voltage (D1, D2, and D3) 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. http://onsemi.com 2 NUP4060AXV6 TYPICAL ELECTRICAL CHARACTERISTICS (Diode D1, D2, and D3 only) 110 100 % OF RATED POWER OR IPP Ppk, PEAK SURGE POWER (W) 100 10 10 100 80 70 60 50 40 30 20 10 0 1 1 90 1000 50 75 100 Figure 2. Power Derating Curve 150 14 0.14 0.12 0.10 0.08 0.06 0.04 0.02 12 TA = 25°C 10 8 6 4 2 0 0 −60 −40 0 20 40 60 80 100 0 3 4 Figure 3. Reverse Leakage versus Temperature Figure 4. Capacitance 70 60 HALF VALUE IRSM/2 @ 20 ms 50 5 6 1 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 40 tP 20 2 BIAS VOLTAGE (V) 80 30 1 T, TEMPERATURE (°C) PEAK VALUE IRSM @ 8 ms tr 90 −20 IF, FORWARD CURRENT (A) 100 0.1 0.01 10 0 125 Figure 1. Pulse Width TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY IR, REVERSE LEAKAGE (mA) 25 TA, AMBIENT TEMPERATURE (°C) 0.16 % OF PEAK PULSE CURRENT 0 t, TIME (ms) TA = 25°C 0.001 0 20 40 60 0.6 80 0.8 1.0 1.2 1.4 t, TIME (ms) VF, FORWARD VOLTAGE (V) Figure 5. 8 × 20 ms Pulse Waveform Figure 6. Forward Voltage http://onsemi.com 3 1.6 1.8 NUP4060AXV6 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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