ONSEMI NTD6416ANLT4G

NTD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These are Pb−Free Devices
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
19
A
Continuous Drain
Current
Steady
State
Power Dissipation
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
18.2 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
RDS(on) MAX
ID MAX
100 V
74 mW @ 10 V
19 A
D
13
PD
71
W
IDM
70
A
TJ, Tstg
−55 to
+175
°C
IS
19
A
EAS
50
mJ
G
S
4
4
1 2
TL
260
°C
Symbol
Max
Unit
Junction−to−Case (Drain) − Steady State
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
47
THERMAL RESISTANCE RATINGS
Parameter
V(BR)DSS
1
3
2
3
IPAK
CASE 369D
STYLE 2
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
YWW
64
16ANLG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
2
Drain
6416ANL
Y
WW
G
YWW
64
16ANLG
•
•
•
•
3
Source
1
Gate
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
Publication Order Number:
NTD6416ANL/D
NTD6416ANL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
120
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
1.0
2.2
5.4
gFS
V
mV/°C
VGS = 4.5 V, ID = 10 A
70
80
VGS = 10 V, ID = 10 A
62
74
VGS = 10 V, ID = 19 A
68
74
VDS = 5 V, ID = 10 A
18
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
700
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
1000
pF
40
nC
110
CRSS
50
Total Gate Charge
QG(TOT)
25
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
9.6
Plateau Voltage
VGP
3.2
V
Gate Resistance
RG
2.4
W
td(on)
7.0
ns
VGS = 10 V, VDS = 80 V, ID = 19 A
2.4
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 80 V,
ID = 19 A, RG = 6.1 W
tf
16
35
40
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Reverse Recovery Charge
Tb
VGS = 0 V, IS = 19 A
TJ = 25°C
0.9
TJ = 125°C
0.72
50
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 19 A
QRR
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2
V
ns
38
14
112
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTD6416ANL
40
40
30
4.5 V
3.6 V
20
3.2 V
10
3.0 V
2.8 V
0
30
20
TJ = 125°C
10
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
5
0
1
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 19 A
TJ = 25°C
0.1
0.09
0.08
0.07
0.06
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.080
TJ = 25°C
0.075
0.065
VGS = 10 V
0.060
0.055
0.050
2
6
10
14
18
ID, DRAIN CURRENT (A)
Figure 4. On−Region versus Drain Current and
Gate−To−Source Voltage
10000
3
VGS = 0 V
VGS = 10 V
ID = 19 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VGS = 4.5 V
0.070
Figure 3. On−Region versus Gate−To−Source
Voltage
2.5
5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.11
TJ = 25°C
TJ = −55°C
VGS = 2.4 V
0
VDS w 10 V
10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C
2
1.5
TJ = 150°C
1000
TJ = 125°C
100
1
0.5
−50
−25
0
25
50
75
100
125
150
175
10
10
TJ, JUNCTION TEMPERTURE (°C)
20
30
40
50
60
70
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
90
Figure 6. Drian−to−Source Leakage Current
versus Voltage
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3
10
NTD6416ANL
1000
800
Ciss
600
400
0
Coss
Crss
0
1000
10
20
30
40
50
60
70
80
90
100
80
VGS
6
4 Qgs
VDS = 80 V
ID = 19 A
TJ = 25°C
0
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
20
0
25
20
VDS = 80 V
ID = 19 A
VGS = 10 V
td(off)
tf
10
td(on)
1
10
TJ = 25°C
VGS = 0 V
15
10
5
0
0.5
100
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
50
10 ms
10
100 ms
1 ms
1
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
100
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
ID, DRAIN CURRENT (A)
5
Figure 7. Capacitance Variation
tr
0.01
40
Qgd
2
0
60
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1200
100
QT
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
200
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
1400
1000
ID = 18.2 A
40
30
20
10
0
25
50
75
100
125
150
175
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
versus Gate Resistance
Figure 12. Resistive Switching Time Variation
versus Gate Resistance
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4
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTD6416ANL
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-04
1.0E-03
1.0E-02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD6416ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416ANL−1G
IPAK
(Pb−Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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5
NTD6416ANL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD6416ANL
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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7
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NTD6416ANL/D