ONSEMI NTD20P06L

NTD20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching
• Pb−Free Packages are Available
Applications
• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion
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V(BR)DSS
RDS(on) TYP
ID MAX
(Note 1)
−60 V
130 m @ −5.0 V
−15.5 A
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Gate−to−Source
Voltage
Continuous
Unit
VDSS
−60
V
VGS
20
V
Non−Repetitive
tp 10 ms
VGSM
30
Continuous
Drain Current
(Note 1)
Steady State
TA = 25°C
ID
−15.5
Power Dissipation (Note 1)
Steady State
G
S
A
MARKING DIAGRAMS
4
TA = 25°C
tp = 10 s
Pulsed Drain
Current
PD
65
W
IDM
50
A
3
DPAK
CASE 369C
Style 2
1 2
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 )
EAS
304
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
°C
260
1
Symbol
Max
Unit
Junction−to−Case (Drain)
RJC
2.3
°C/W
Junction−to−Ambient – Steady State (Note 1)
RJA
80
Junction−to−Ambient – Steady State (Note 2)
RJA
110
August, 2004 − Rev. 3
1
2
3
DPAK
CASE 369D
Style 2
20P06L
Y
WW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
 Semiconductor Components Industries, LLC, 2004
2
1
3
Drain
Gate
Source
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
4
4
Drain
Device Code
= Year
= Work Week
YWW
T
20P06L
Drain−to−Source Voltage
Value
YWW
T
20P06L
Symbol
Parameter
1 2 3
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD20P06L/D
NTD20P06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 A
−60
−74
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−64
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −60 V
TJ = 25°C
−1.0
TJ = 150°C
−10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = −250 A
Gate−to−Source Leakage Current
±100
A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
( )
Forward Transconductance
gFS
Drain−to−Source On−Voltage
VDS(on)
( )
−1.0
−1.5
−2.0
3.1
VGS = −5.0 V, ID = −7.5 A
0.130
VGS = −5.0 V, ID = −15 A
0.143
VDS = −10 V, ID = −7.5 A
11
VGS = −5.0 V,
ID = −7.5 A
V
mV/°C
0.150
S
TJ = 25°C
−1.2
TJ = 150°C
−1.9
V
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V,, f = 1 MHz,, VDS = −25 V
QG(TOT)
VGS = −5.0 V, VDS = −48 V,
ID = −18 A
pF
740
1190
207
300
66
120
15
26
nC
ns
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.0
7.0
td(ON)
11
20
90
180
28
50
70
135
TJ = 25°C
1.5
2.5
TJ = 150°C
1.3
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −5.0 V, VDD = −30 V,
ID = −15 A, RG = 9.1 tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V
V, IS = −15
15 A
60
VGS = 0 V, dIS/dt = 100 A/s,
IS = −12 A
QRR
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2
ns
39
21
0.13
3. Pulse Test: pulse width 300 s, duty cycle 2%
4. Switching characteristics are independent of operating junction temperatures
V
nC
NTD20P06L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
40
VGS = −6 V
VGS = −10 V
30
VGS = −5 V
VGS = −8 V
25
VGS = −7 V
VGS = −4.5 V
20
VGS = −4 V
15
VGS = −3.5 V
10
VGS = −3 V
5
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
10
VDS 10 V
0
1
2
3
4
5
6
7
−VDS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = −5 V
0.35
0.3
TJ = 125°C
0.25
0.2
0.15
TJ = 25°C
0.1
TJ = −55°C
0.05
0
0
5
10
15
20
25
8
9
21
24
0.25
TJ = 25°C
0.225
0.2
0.175
0.15
VGS = −5 V
0.125
VGS = −10 V
0.1
0.075
0.05
0.025
0
0
30
3
6
9
12
15
18
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
2
1.6
TJ = 125°C
20
10
0.4
1.8
TJ = 25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.5
0.45
30
0
VGS = 0 V
ID = −7.5 A
VGS = −5 V
−ID, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
()
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
VGS = −5.5 V
VGS = −9 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (A)
35
−ID, DRAIN CURRENT (A)
40
1.4
1.2
1
0.8
0.6
0.4
TJ = 150°C
1000
TJ = 125°C
100
10
0.2
0
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
NTD20P06L
C, CAPACITANCE (pF)
2400
2200
2000
VDS = 0 V
1800
1600
1400
Ciss
1200
Crss
TJ = 25°C
VGS = 0 V
1000
800
Ciss
600
Coss
400
200
0
Crss
−10
−5
0
−VGS
5
10
15
20
25
−VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
60
ID = −15 A
TJ = 25°C
50
12.5
10
40
QG
VDS
7.5
Qgs
VGS
QGD
30
5
20
2.5
10
0
0
0
4
8
12
VDS, DRAIN−TO−SOURCE VOLTAGE
(V)
−VGS, GATE−TO−SOURCE VOLTAGE
(V)
15
16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
1000
20
−IS, SOURCE CURRENT (A)
t, TIME (nS)
VDD = −30 V
ID = −15 A
VGS = −5 V
tR
100
tF
td(off)
10
td(on)
VGS = 0 V
TJ = 25°C
15
10
5
0
1
1
10
Rg, GATE RESISTANCE ()
100
0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.25
0.5
0.75
1
1.25
1.5
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.75
Figure 10. Diode Forward Voltage versus
Current
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4
−ID, DRAIN CURRENT (A)
1000
VGS = −15 V
Single Pulse
TC = 25°C
100
100
10
1
10 ms
1
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
NTD20P06L
350
250
200
150
100
50
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
ID = −15 A
300
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
Normalized to RJA at Steady State (1 in Pad)
0.1
Chip
0.0175
0.0154 F
0.0710
0.2706
0.5776
0.0854 F 0.3074 F 1.7891 F
0.7086
Ambient
107.55 F
Single Pulse
0.01
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 13. Thermal Response
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5
1E+01
1E+02
1E+03
NTD20P06L
ORDERING INFORMATION
Device
Shipping†
Package
NTD20P06L−1
NTD20P06L
75 Units / Rail
75 Units / Rail
DPAK
NTD20P06LT4
2500 /Tape & Reel
NTD20P06L−1G
NTD20P06LG
75 Units / Rail
DPAK
(Pb−Free)
75 Units / Rail
NTD20P06LT4G
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD20P06L
PACKAGE DIMENSIONS
DPAK−3
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD20P06L
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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8
For additional information, please contact your
local Sales Representative.
NTD20P06L/D