TI BQ2014SN-D120

bq2014
Gas Gauge IC with External Charge Control
Features
General Description
➤ Conservative and repeatable
measurement of available charge
in rechargeable batteries
The bq2014 Gas Gauge IC is intended for battery-pack or in-system
installation to maintain an accurate
record of available battery charge.
The IC monitors the voltage drop
across a sense resistor connected in
series between the negative battery
terminal and ground to determine
charge and discharge activity of the
battery.
➤ Charge control output operates an
external charge controller such as
the bq2004 Fast Charge IC
➤ Designed for battery pack integration
-
120µA typical standby current
➤ Display capacity via single-wire
serial communication port or direct drive of LEDs
➤ Measurements compensated for
current and temperature
➤ Self-discharge compensation using
internal temperature sensor
➤ User-selectable end-of-discharge
threshold
➤ Battery voltage, nominal available charge, temperature, etc.
available over serial port
➤ 16-pin narrow SOIC
Pin Connections
Self-discharge of NiMH and NiCd
batteries is estimated based on an
internal timer and temperature sensor. Compensations for battery temperature and rate of charge or discharge are applied to the charge, discharge, and self-discharge calculations to provide available charge information across a wide range of operating conditions. Battery capacity
is automatically recalibrated, or
“learned,” in the course of a discharge cycle from full to empty.
Nominal Available Charge (NAC)
may be directly indicated using a
five-segment LED display.
The bq2014 supports a simple singleline bidirectional serial link to an external processor (with a common
ground). The bq2014 outputs battery
information in response to external
commands over the serial link.
Internal registers include available
charge, temperature, capacity, battery voltage, battery ID, battery
status, and programming pin settings. To support subassembly testing, the outputs may also be controlled. The external processor may
also overwrite some of the bq2014
gas gauge data registers.
The bq2014 may operate directly
from three or four cells. With the
REF output and an external transistor, a simple, inexpensive regulator
can be built to provide VCC across a
greater number of cells.
The bq2014 includes a charge control output that controls an external
Fast Charge IC such as the bq2004.
Pin Names
LCOM
LCOM
1
16
VCC
SEG1/PROG1
2
15
REF
SEG2/PROG2
3
14
CHG
SEG3/PROG3
4
13
DQ
SEG4/PROG4
5
12
EMPTY
SEG5/PROG5
6
11
SB
DONE
7
10
DISP
VSS
8
9
LED common output
SEG1/PROG1 LED segment 1/
program 1 input
SEG2/PROG2 LED segment 2/
program 2 input
SEG3/PROG3 LED segment 3/
program 3 input
SEG4/PROG4 LED segment 4/
program 4 input
REF
Voltage reference output
CHG
Charge control output
DQ
Serial communications
input/output
EMPTY
Empty battery indicator
output
SB
Battery sense input
DISP
Display control input
SR
Sense resistor input
VCC
3.0–6.5V
VSS
System ground
SR
16-Pin Narrow SOIC
PN201401.eps
SEG5/PROG5 LED segment 5/
program 5 input
DONE
Fast charge complete
12/95 C
1
bq2014
SR
Pin Descriptions
LCOM
The voltage drop (VSR) across the sense resistor RS is monitored and integrated over
time to interpret charge and discharge activity. The SR input is tied to the high side of
the sense resistor. VSR < VSS indicates discharge, and VSR > VSS indicates charge. The
effective voltage drop VSRO, as seen by the
bq2014, is VSR + VOS (see Table 5).
LED common output
Open-drain output switches VCC to source
current for the LEDs. The switch is off during initialization to allow reading of the soft
pull-up or pull-down programming resistors.
LCOM is also in a high impedance state
when the display is off.
SEG1–
SEG5
LED display segment outputs (dual function with PROG1—PROG5)
DISP
Programmed full count selection imputs
(dual function with SEG1—SEG5)
These three-level input pins define the programmed full count (PFC) thresholds described in Table 2.
PROG3–
PROG4
SB
Gas gauge rate selection inputs (dual
function with SEG3—SEG4)
Self-discharge rate selection (dual function with SEG5)
EMPTY
Charge control output
DQ
This open-drain output becomes active high
when charging is allowed.
DONE
Battery empty output
This open-drain output becomes highimpedance on detection of a valid final endof-discharge voltage (VEDVF) and is low following the next application of a valid charge.
This three-level input pin defines the selfdischarge compensation rate shown in Table 1.
CHG
Secondary battery input
This input monitors the single-cell voltage
potential through a high-impedance resistive divider network for the end-of-discharge
voltage (EDV) thresholds,maximum charge
voltage (MCV), and battery removed.
These three-level input pins define the programmed full count (PFC) thresholds described in Table 2.
PROG5
Display control input
DISP high disables the LED display. DISP
tied to VCC allows PROGX to connect directly to VCC or V SS instead of through a
pull-up or pull-down reistor. DISP floating
allows the LED display to be active during
a valid charge or during discharge if the
NAC register is updated at a rate equivalent to V SRO ≤ -4mV. DISP low activates
the display. See Table 1.
Each output may activate an LED to sink
the current sourced from LCOM.
PROG1–
PROG5
Sense resistor input
Serial I/O pin
This is an open-drain bidirectional pin.
REF
Fast charge complete
Voltage reference output for regulator
REF provides a voltage reference output for
an optional micro-regulator.
This input is used to communicate the
status of an external charge controller such
as the bq2004 Fast Charge IC. Note: This
pin must be pulled down to VSS using a
200KΩ resistor.
2
VCC
Supply voltage input
VSS
Ground
bq2014
Figure 1 shows a typical battery pack application of the
bq2014 using the LED display capability as a chargestate indicator. The bq2014 is configured to display capacity in a relative display mode. The relative display
mode uses the last measured discharge capacity of the
battery as the battery “full” reference. The LED segments output a percentage of the available charge based
on NAC and LMD. A push-button display feature is
available for momentarily enabling the LED display.
Functional Description
General Operation
The bq2014 determines battery capacity by monitoring
the amount of charge input to or removed from a rechargeable battery. The bq2014 measures discharge and
charge currents, estimates self-discharge, monitors the
battery for low-battery voltage thresholds, and compensates for temperature and charge/discharge rates. The
charge measurement is made by monitoring the voltage
across a small-value series sense resistor between the
battery’s negative terminal and ground. The available
battery charge is determined by monitoring this voltage
over time and correcting the measurement for the environmental and operating conditions.
The bq2014 monitors the charge and discharge currents
as a voltage across a sense resistor (see RS in Figure 1).
A filter between the negative battery terminal and the
SR pin is required.
Figure 1. Battery Pack Application Diagram—LED Display,
3
bq2014
compensations, self-discharge counting, and available
charge display translation. The temperature range is
available over the serial port in 10°C increments as
shown below:
Voltage Thresholds
In conjunction with monitoring VSR for charge/discharge
currents, the bq2014 monitors the single-cell battery potential through the SB pin. The single-cell voltage potential is determined through a resistor/divider network
per the following equation:
R2
= N −1
R3
where N is the number of cells, R2 is connected to the
positive battery terminal, and R3 is connected to the
negative battery terminal. The single-cell battery voltage is monitored for the end-of-discharge voltage (EDV)
and for maximum cell voltage (MCV). EDV threshold
levels are used to determine when the battery has
reached an “empty” state, and the MCV threshold is used
for fault detection during charging.
Two EDV thresholds for the bq2014 are programmable
with the default values fixed at:
EDV1 (early warning) = 1.05V
EDVF (empty) = 0.95V
If VSB is below either of the two EDV thresholds, the associated flag is latched and remains latched, independent of VSB, until the next valid charge (as defined in the
section entitled “Gas Gauge Operation”). The VSB value
is also available over the serial port.
During discharge and charge, the bq2014 monitors VSR
for various thresholds. These thresholds are used to
compensate the charge and discharge rates. Refer to the
count compensation section for details. EDV monitoring
is disabled if VSR ≤ -250mV typical and resumes ½ second after VSR > -250mV.
TMPGG (hex)
Temperature Range
0x
< -30°C
1x
-30°C to -20°C
2x
-20°C to -10°C
3x
-10°C to 0°C
4x
0°C to 10°C
5x
10°C to 20°C
6x
20°C to 30°C
7x
30°C to 40°C
8x
40°C to 50°C
9x
50°C to 60°C
Ax
60°C to 70°C
Bx
70°C to 80°C
Cx
> 80°C
Layout Considerations
The bq2014 measures the voltage differential between
the SR and VSS pins. VOS (the offset voltage at the SR
pin) is greatly affected by PC board layout. For optimal
results, the PC board layout should follow the strict rule
of a single-point ground return. Sharing high-current
ground with small signal ground causes undesirable
noise on the small signal nodes. Additionally:
EMPTY Output
The EMPTY output switches to high impedance when
VSB < VEDF and remains latched until a valid charge occurs.
Reset
The bq2014 recognizes a valid battery whenever VSB is
greater than 0.1V typical. VSB rising from below 0.25V
or falling from above 2.25V (VMCV) resets the device. Reset can also be accomplished with a command over the
serial port as described in the Reset Register section.
Temperature
The bq2014 internally determines the temperature in
10°C steps centered from -35°C to +85°C. The temperature steps are used to adapt charge and discharge rate
4
n
The capacitors (C2 and C3) should be placed as close as
possible to the SB and VCC pins, respectively, and their
paths to VSS should be as short as possible. A
high-quality ceramic capacitor of 0.1µf is recommended
for VCC.
n
The sense resistor (R1, C1) should be placed as close
as possible to the SR pin.
n
The sense resistor (R16) should be as close as
possible to the bq2014.
bq2014
charge lasts long enough to cause an increment in
NACH. Small increments of charging are not considered “valid” if they result in counts in NACL but do not
generate a roll-over (carry) that increments NACH.
NACL is reset anytime the counter direction changes
from down to up, so the number of counts required to
cause a roll-over and a valid charge is always 256. The
counter may be incrementing by 2, 4, 8, or more counts
per increment, however, depending on the scaling factors selected. Therefore, a valid charge may be constituted by a smaller number of counter increments.
Gas Gauge Operation
The operational overview diagram in Figure 2 illustrates
the operation of the bq2014. The bq2014 accumulates a
measure of charge and discharge currents, as well as an
estimation of self-discharge. Charge and discharge currents are temperature and rate compensated, whereas
self-discharge is only temperature compensated.
The main counter, Nominal Available Charge (NAC),
represents the available battery capacity at any given
time. Battery charging increments the NAC register,
while battery discharging and self-discharge decrement
the NAC register and increment the DCR (Discharge
Count Register).
1.
LMD is the last measured discharge capacity of the
battery. On initialization (application of VCC or battery replacement), LMD = PFC. During subsequent
discharges, the LMD is updated with the latest
measured capacity in the Discharge Count Register
(DCR) representing a discharge from full to below
EDV1. A qualified discharge is necessary for a capacity transfer from the DCR to the LMD register.
The LMD also serves as the 100% reference threshold used by the relative display mode.
The Discharge Count Register (DCR) is used to update
the Last Measured Discharge (LMD) register only if a
complete battery discharge from full to empty occurs
without any partial battery charges. Therefore, the
bq2014 adapts its capacity determination based on the
actual conditions of discharge.
The battery's initial capacity is equal to the Programmed Full Count (PFC) shown in Table 2. Until
LMD is updated, NAC counts up to but not beyond this
threshold during subsequent charges. This approach allows the gas gauge to be charger-independent and compatible with any type of charge regime.
2.
Charge
Current
Discharge
Current
Self-Discharge
Timer
Rate and
Temperature
Compensation
Rate and
Temperature
Compensation
Temperature
Compensation
+
Main Counters
and Capacity
Reference (LMD)
+
-
Nominal
Available
Charge
(NAC)
<
Last
Measured
Discharged
(LMD)
Chip-Controlled
Available Charge
LED Display
+
Discharge
Count
Qualified Register
(DCR)
Transfer
Temperature Step,
Other Data
Temperature
Translation
Outputs
Programmed Full Count (PFC) or initial
battery capacity:
The initial LMD and gas gauge rate values are programmed by using PROG1—PROG4. The bq2014 is
configured for a given application by selecting a
PFC value from Table 2. The correct PFC may be
Many actions in the bq2014 are triggered by detection of
a “valid charge.” NAC is stored in an asynchronous, 2byte counter; the lower byte is NACL and the upper byte
is NACH. A valid charge has occurred anytime the
Inputs
Last Measured Discharge (LMD) or
learned battery capacity:
Serial
Port
FG201002.eps
Figure 2. Operational Overview
5
bq2014
Relative display mode
Serial port only
Self-discharge = C 64
Voltage drop over sense resistor = 5mV to 400mV
determined by multiplying the rated battery capacity in mAh by the sense resistor value:
Battery capacity (mAh) * sense resistor (Ω) =
Therefore:
PFC (mVh)
2200mAh ∗ 0.1Ω = 220mVh
Selecting a PFC slightly less than the rated capacity for absolute mode provides capacity above the
full reference for much of the battery's life.
Select:
PFC = 33792 counts or 211mVh
PROG1 = float
PROG2 = float
PROG3 = float
PROG4 = low
PROG5 = float
DONE = low
Example: Selecting a PFC Value
Given:
Sense resistor = 0.1Ω
Number of cells = 6
Capacity = 2200mAh, NiCd battery
Current range = 50mA to 2A
Table 1. bq2014 Programming
Pin Connection
PROG5 Self-Discharge Rate
DISP Display State
H
Disabled
LED disabled
Z
NAC
L
NAC
LED enabled on discharge when
VSRO < -4mV or during a valid charge
64
LED on
47
Table 2. bq2014 Programmed Full Count mVh Selections
PROGx
1
2
Programmed
PROG4 = L
Full
PROG4 = Z
Count
(PFC)
PROG3 = H PROG3 = Z PROG3 = L PROG3 = H PROG3 = Z PROG3 = L
Units
-
-
-
Scale =
1/80
Scale =
1/160
Scale =
1/320
Scale =
1/640
Scale =
1/1280
Scale =
1/2560
mVh/
count
H
H
49152
614
307
154
76.8
38.4
19.2
mVh
H
Z
45056
563
282
141
70.4
35.2
17.6
mVh
H
L
40960
512
256
128
64.0
32.0
16.0
mVh
Z
H
36864
461
230
115
57.6
28.8
14.4
mVh
Z
Z
33792
422
211
106
53.0
26.4
13.2
mVh
Z
L
30720
384
192
96.0
48.0
24.0
12.0
mVh
L
H
27648
346
173
86.4
43.2
21.6
10.8
mVh
L
Z
25600
320
160
80.0
40.0
20.0
10.0
mVh
L
L
22528
282
141
70.4
35.2
17.6
8.8
mVh
90
45
22.5
11.25
5.6
2.8
mV
VSR equivalent to 2
counts/s (nom.)
6
bq2014
The initial full battery capacity is 211mVh
(2110mAh) until the bq2014 “learns” a new capacity
with a qualified discharge from full to EDV1.
3.
Charge Control
Charge control is provided by the CHG output. This output is asserted continuously when NAC > 0.94 ∗ LMD.
CHG is also asserted when a valid charge is detected
(CHGS in the FLGS1 register is also set). CHG is low
when NAC < 0.94 ∗ LMD and there is no valid charge activity.
Nominal Available Charge (NAC):
NAC counts up during charge to a maximum value
of LMD and down during discharge and selfdischarge to 0. NAC is reset to 0 on initialization
and on the first valid charge after EDV = 1. To prevent overstatement of charge during periods of overcharge, NAC stops incrementing when NAC = LMD.
4.
DONE Input
When the bq2014 detects a valid charge complete with
an active-high signal on the DONE input, NAC is set to
LMD for NAC 64 (NiCd) self-discharge setting. NAC is set
to 94% of LMD (if NAC is below 94%) for NAC 47 (NiMH)
self-discharge setting. VDQ is set along with DONE.
Discharge Count Register (DCR):
The DCR counts up during discharge independent
of NAC and could continue increasing after NAC
has decremented to 0 until VSB < EDV1. Prior to
NAC = 0 (empty battery), both discharge and selfdischarge increment the DCR. After NAC = 0, only
discharge increments the DCR. The DCR resets to
0 when NAC = LMD. The DCR does not roll over
but stops counting when it reaches FFFFh.
Discharge Counting
All discharge counts where VSRO < VSRD cause the NAC
register to decrement and the DCR to increment if
EDV1 = 0. Exceeding the fast discharge threshold
(FDQ) if the rate is equivalent to VSRO < -4mV activates
the display, if enabled. The display becomes inactive after VSRO rises above -4mV. V SRD is a programmable
threshold as described in the Digital Magnitude Filter section. The default value for VSRD is -300µV.
The DCR value becomes the new LMD value on the
first charge after a valid discharge to VEDV1 if:
n
n
n
No valid charges have occurred during the period between NAC = LMD and EDV1 detected.
The self-discharge count is not more than 4096
counts (8% to 18% of PFC, specific percentage
threshold determined by PFC).
Self-Discharge Estimation
The bq2014 continuously decrements NAC and increments DCR for self-discharge based on time and temperature. The self-discharge count rate is programmed to be a
nominal 1 64 * NAC or 1 47 ∗ NAC per day or disabled as selected by PROG5. This is the rate for a battery whose
temperature is between 20°C–30°C. The NAC register
cannot be decremented below 0.
The temperature is ≥ 0°C when the EDV1 level
is reached during discharge.
The valid discharge flag (VDQ) indicates whether
the present discharge is valid for LMD update.
Charge Counting
Count Compensations
Charge activity is detected based on a positive voltage
on the VSR input. The bq2014 determines charge activity sustained at a continuous rate equivalent to VSRO
(VSR + VOS) > VSRQ. Once a valid charge is detected,
charge counting continues until VSRO falls below VSRQ.
VSRQ is a programmable threshold (as described in the
Digital Magnitude Filter section) and has a default
value of 375µV. If charge activity is detected, the bq2014
increments the NAC at a rate proportional to VSRO. If
enabled, the bq2014 then activates an LED display.
Charge actions increment the NAC after compensation
for charge rate and temperature.
The bq2014 determines fast charge when the NAC updates at a rate of ≥ 2 counts/sec. Charge and discharge
activity is compensated for temperature and charge/discharge rate before updating the NAC and/or DCR. Selfdischarge estimation is compensated for temperature
before updating the NAC or DCR.
Charge Compensation
Two charge efficiency compensation factors are used for
trickle charge and fast charge. Fast charge is defined as
a rate of charge resulting in ≥ 2 NAC counts/sec (≥ 0.15C
to 0.32C depending on PFC selections; see Table 2). The
compensation defaults to the fast charge factor until the
actual charge rate is determined.
7
bq2014
Temperature adapts the charge rate compensation factors over three ranges between nominal, warm, and hot
temperatures. The compensation factors are shown below.
Charge
Temperature
Trickle Charge
Compensation
Table 3. Self-Discharge Compensation
Temperature
Step
Fast Charge
Compensation
Typical Rate
PROG5 = Z
< 10°C
NAC
< 40°C
0.80
0.95
10–20°C
NAC
> 40°C
0.75
0.90
20–30°C
NAC
30–40°C
NAC
40–50°C
NAC
50–60°C
NAC
60–70°C
NAC
> 70°C
NAC
Discharge Compensation
Corrections for the rate of discharge are made by adjusting an internal discharge compensation factor. The discharge factor is based on the dynamically measured VSR.
The compensation factors during discharge are:
PROG5 = L
NAC
256
188
NAC
128
NAC
64
NAC
32
NAC
16
NAC
8
NAC
4
NAC
2
94
47
23 .5
11 .8
5 .88
2 .94
1 .47
Digital Magnitude Filter
Approximate
VSR Threshold
Discharge
Compensation Factor
Efficiency
VSR > -150 mV
1.00
100%
VSR < -150 mV
1.05
95%
The bq2014 has a programmable digital filter to eliminate charge and discharge counting below a set threshold. The default setting is -0.30mV for V SRD and
+0.38mV for VSRQ. The proper digital filter setting can
be calculated using the following equation. Table 4
shows typical digital filter settings.
VSRD (mV) =
Temperature compensation during discharge also takes place.
At lower temperatures, the compensation factor increases by
0.05 for each 10°C temperature range below 10°C.
−45
DMF
VSRQ (MV) = -125 ∗ VSRD
Comp. factor = 1.00 + (0.05 * N)
Table 4. Typical Digital Filter Settings
Where N = number of 10°C steps below 10°C and
-150mV < V SR < 0.
DMF
75
100
150 (default)
175
200
For example:
T > 10°C: Nominal compensation, N = 0
0°C < T < 10°C: N = 1 (i.e., 1.00 becomes 1.05)
-10°C < T < 0°C: N = 2 (i.e., 1.00 becomes 1.10)
-20°C < T < -10°C: N = 3 (i.e., 1.00 becomes 1.15)
DMF
Hex.
4B
64
96
AF
C8
VSRD
(mV)
-0.60
-0.45
-0.30
-0.26
-0.23
VSRQ
(mV)
0.75
0.56
0.38
0.32
0.28
Error Summary
-20°C < T < -30°C: N = 4 (i.e., 1.00 becomes 1.20)
Self-Discharge Compensation
Capacity Inaccurate
The self-discharge compensation is programmed for a
nominal rate of 1 64 * NAC per day, 1 47 ∗ NAC per day, or
disabled. This is the rate for a battery within the
20°C–30°C temperature range (TMPGG = 6x). This rate
varies across 8 ranges from <10°C to >70°C, doubling
with each higher temperature step (10°C). See Table 3
The LMD is susceptible to error on initialization or if no updates occur. On initialization, the LMD value includes the
error between the programmed full capacity and the actual
capacity. This error is present until a valid discharge occurs and LMD is updated (see the DCR description on page
7). The other cause of LMD error is battery wear-out. As
the battery ages, the measured capacity must be adjusted
to account for changes in actual battery capacity.
A Capacity Inaccurate counter (CPI) is maintained and
incremented each time a valid charge occurs (qualified
by NAC; see the CPI register description) and is reset
8
bq2014
Table 5. Current-Sensing Error as a Function of VSR
Symbol
Parameter
Typical
INL
Integrated non-linearity
error
±2
INR
Integrated nonrepeatability error
±1
Maximum
Units
Notes
±4
%
Add 0.1% per °C above or below 25°C
and 1% per volt above or below 4.25V.
±2
%
Measurement repeatability given
similar operating conditions.
either polled or interrupt processing. Data input from the
bq2014 may be sampled using the pulse-width capture
timers available on some microcontrollers.
whenever LMD is updated from the DCR. The counter
does not wrap around but stops counting at 255. The capacity inaccurate flag (CI) is set if LMD has not been updated following 64 valid charges.
Communication is normally initiated by the host processor sending a BREAK command to the bq2014. A
BREAK is detected when the DQ pin is driven to a
logic-low state for a time, tB or greater. The DQ pin
should then be returned to its normal ready-high logic
state for a time, tBR. The bq2014 is now ready to receive
a command from the host processor.
Current-Sensing Error
Table 5 illustrates the current-sensing error as a function of V SR . A digital filter eliminates charge and
discharge counts to the NAC register when VSRO (VSR +
VOS) is between VSRQ and VSRD.
The return-to-one data bit frame consists of three distinct
sections. The first section is used to start the transmission
by either the host or the bq2014 taking the DQ pin to a
logic-low state for a period, tSTRH,B. The next section is the
actual data transmission, where the data should be valid by
a period, tDSU, after the negative edge used to start communication. The data should be held for a period, tDV, to allow
the host or bq2014 to sample the data bit.
Communicating With the bq2014
The bq2014 includes a simple single-pin (DQ plus return) serial data interface. A host processor uses the interface to access various bq2014 registers. Battery characteristics may be easily monitored by adding a single
contact to the battery pack. The open-drain DQ pin on
the bq2014 should be pulled up by the host system, or may
be left floating if the serial interface is not used.
The interface uses a command-based protocol, where the
host processor sends a command byte to the bq2014.
The command directs the bq2014 to either store the next
eight bits of data received to a register specified by the
command byte or output the eight bits of data specified
by the command byte.
The final section is used to stop the transmission by returning the DQ pin to a logic-high state by at least a period,
tSSU, after the negative edge used to start communication.
The final logic-high state should be held until a period, tSV,
to allow time to ensure that the bit transmission was
stopped properly. The timings for data and break communication are given in the serial communication timing
specification and illustration sections.
The communication protocol is asynchronous return-toone. Command and data bytes consist of a stream of eight
bits that have a maximum transmission rate of 333
bits/sec. The least-significant bit of a command or data
byte is transmitted first. The protocol is simple enough
that it can be implemented by most host processors using
Communication with the bq2014 is always performed
with the least-significant bit being transmitted first.
Figure 3 shows an example of a communication sequence to read the bq2014 NAC register.
Written by Host to bq2014
CMDR = 03h
LSB
Received by Host to bq2014
NAC = 65h
MSB
Break 1 1 0 0 0 0 0 0
LSB
MSB
1 0 1 0 011 0
DQ
TD201401.eps
Figure 3. Typical Communication With the bq2014
9
bq2014
Where CHGS is:
bq2014 Registers
The bq2014 command and status registers are listed in
Table 6 and described below.
Command Register (CMDR)
W/R bit
n
Command address
Either discharge activity detected or VSRO <
VSRQ
1
VSRO > VSRQ
The battery replaced flag (BRP) is asserted whenever
the potential on the SB pin (relative to VSS), VSB, falls
from above the maximum cell voltage, MCV (2.25V), or
rises above 0.1V. The BRP flag is also set when the
bq2014 is reset (see the RST register description). BRP
is reset when either a valid charge action increments
NAC to be equal to LMD, or a valid charge action is detected after the EDV1 flag is asserted. BRP = 1 signifies
that the device has been reset.
The write-only CMDR register is accessed when eight
valid command bits have been received by the bq2014.
The CMDR register contains two fields:
n
0
The W/R bit of the command register is used to select
whether the received command is for a read or a write
function.
The BRP values are:
The W/R values are:
FLGS1 Bits
CMDR Bits
7
6
5
4
3
2
1
0
W/R
-
-
-
-
-
-
-
The bq2014 outputs the requested register
contents specified by the address portion of
CMDR.
1
The following eight bits should be written
to the register specified by the address portion of CMDR.
CMDR Bits
-
6
5
AD6 AD5
5
4
3
2
1
0
-
BRP
-
-
-
-
-
-
0
Battery is charged until NAC = LMD or discharged until the EDV1 flag is asserted
1
VSB dropping from above MCV, VSB rising
from below 0.1V, or a serial port initiated
reset has occurred
The battery removed flag (BRM) is asserted whenever
the potential on the SB pin (relative to VSS) rises above
MCV or falls below 0.1V. The BRM flag is asserted until
the condition causing BRM is removed. Because of signal filtering, 30 seconds may have to transpire for BRM
to react to battery insertion or removal.
The lower seven-bit field of CMDR contains the address
portion of the register to be accessed. Attempts to write
to invalid addresses are ignored.
7
6
Where BRP is:
Where W/R is:
0
7
The BRM values are:
4
3
2
1
0
AD4
AD3
AD2
AD1
AD0
(LSB)
FLGS1 Bits
Primary Status Flags Register (FLGS1)
The charge status flag (CHGS) is asserted when a
valid charge rate is detected. Charge rate is deemed
valid when VSRO > VSRQ. A VSRO of less than VSRQ or
discharge activity clears CHGS.
FLGS1 Bits
6
5
4
3
2
1
0
-
-
-
-
-
-
-
5
4
3
2
1
0
-
-
BRM
-
-
-
-
-
0
0.1V < VSB < 2.25V
1
0.1V > VSB or VSB > 2.25V
The capacity inaccurate flag (CI) is used to warn the
user that the battery has been charged a substantial
number of times since LMD has been updated. The CI
flag is asserted on the 64th charge after the last LMD
update or when the bq2014 is reset. The flag is cleared
after an LMD update.
The CHGS values are:
7
6
Where BRM is:
The read-only FLGS1 register (address=01h) contains
the primary bq2014 flags.
CHGS
7
10
bq2014
Table 6. bq2014 Command and Status Registers
Symbol
Register
Name
Command
CMDR
register
Primary
FLGS1 status flags
register
Temperature
TMPGG and gas gauge
register
Nominal
available
NACH
charge high
byte register
Nominal
available
NACL
charge low
byte register
Battery
BATID identification
register
Last measured disLMD
charge register
Secondary
FLGS2 status flags
register
Program pin
PPD
pull-down
register
Program pin
PPU
pull-up register
Capacity
CPI
inaccurate
count register
Digital magDMF
nitude filter
register
Battery
VSB
voltage
End-ofdischarge
VTS
threshold select
RST
Reset register
Note:
Control Field
4
3
Loc.
(hex)
Read/
Write
7(MSB)
6
5
00h
Write
W/R
AD6
AD5
AD4
01h
Read
CHGS
BRP
BRM
02h
Read
TMP3
TMP2
TMP1
03h
R/W
NACH7 NACH6 NACH5 NACH4 NACH3 NACH2 NACH1 NACH0
17h
Read
NACL7 NACL6 NACL5 NACL4 NACL3 NACL2 NACL1 NACL0
04h
R/W
BATID7 BATID6 BATID5 BATID4 BATID3 BATID2 BATID1 BATID0
05h
R/W
LMD7
LMD6
LMD5
LMD4
LMD3
LMD2
LMD1
LMD0
06h
Read
CR
DR2
DR1
DR0
n/u
n/u
n/u
OVLD
07h
Read
n/u
n/u
PPD6
PPD5
PPD4
PPD3
PPD2
PPD1
08h
Read
n/u
n/u
PPU6
PPU5
PPU4
PPU3
PPU2
PPU1
09h
Read
CPI7
CPI6
CPI5
CPI4
CPI3
CPI2
CPI1
CPI0
0Ah
R/W
DMF7
DMF6
DMF5
DMF4
DMF3
DMF2
DMF1
DMF0
0Bh
Read
VSB7
VSB6
VSB5
VSB4
VSB3
VSB2
VSB1
VSB0
0Ch
R/W
VTS7
VTS6
VTS5
VTS4
VTS3
VTS2
VTS1
VTS0
39h
Write
RST
0
0
0
0
0
0
0
n/u = not used
11
2
1
0(LSB)
AD3
AD2
AD1
AD0
CI
VDQ
n/u
EDV1
EDVF
TMP0
GG3
GG2
GG1
GG0
bq2014
Where EDV1 is:
The CI values are:
FLGS1 Bits
7
6
5
4
3
2
1
0
-
-
-
CI
-
-
-
-
When LMD is updated with a valid full discharge
1
After the 64th valid charge action with no
LMD updates or when the device is reset
The valid discharge flag (VDQ) is asserted when the
bq2014 is discharged from NAC = LMD or DONE is
valid. The flag remains set until either LMD is updated
or one of three actions that can clear VDQ occurs:
n
n
n
Valid charge action detected,VSB ≥ VTS
1
VSB < VTS providing that OVLD=0 (see
FLGS2 register description)
The final end-of-discharge warning flag (EDVF) flag
is used to warn that battery power is at a failure condition. All segment drivers are turned off. The EDVF flag
is latched until a valid charge has been detected. The
EMPTY pin is also forced to a high-impedance state on
assertion of EDVF. The host system may pull EMPTY
high, which may be used to disable circuitry to prevent
deep-discharge of the battery. The EDVF threshold is
set 100mV below the EDV1 threshold.
Where CI is:
0
0
The EDVF values are:
FLGS1 Bits
The self-discharge count register (SDCR) has
exceeded the maximum acceptable value (4096
counts) for an LMD update.
A valid charge action sustained at VSRO > VSRQ for at
least 256 NAC counts.
7
6
5
4
3
2
1
0
-
-
-
-
-
-
-
EDVF
Where EDVF is:
The EDV flag was set at a temperature below 0°C
0
Valid charge action detected,
VSB ≥ VTS - 100mV
1
VSB < VTS - 100mV providing that OVLD=0
(see FLGS2 register description)
The VDQ values are:
FLGS1 Bits
7
6
5
4
3
2
1
0
-
-
-
-
VDQ
-
-
-
Voltage Threshold Register (VTS)
The end-of-discharge threshold voltages (EDV1 and
EDVF) can be set using the VTS register (address=0ch).
The read/write VTS register sets the EDV1 trip point.
EDVF is set 100mV below EDV1. The default value in
the VTS register is 70h, representing EDV1 = 1.05V and
EDVF = 0.95V. EDV1 = 2.4V ∗ (VTS/256).
Where VDQ is:
0
SDCR ≥ 4096, subsequent valid charge action detected, or EDV1 is asserted with the
temperature less than 0°C
1
On first discharge after NAC = LMD or
DONE is valid
VTS Register Bits
7
The first end-of-discharge warning flag (EDV1)
warns the user that the battery is almost empty. The
first segment pin, SEG1, is modulated at a 4Hz rate if
the display is enabled once EDV1 is asserted, which
should warn the user that loss of battery power is imminent. The EDV1 flag is latched until a valid charge has
been detected. The EDV1 threshold is externally controlled via the VTS register (see Voltage Threshold Register on this page).
6
5
4
3
2
1
0
VTS7 VTS6 VTS5 VTS4 VTS3 VTS2 VTS1 VTS0
Battery Voltage Register (VSB)
The read-only battery voltage register is used to read
the single-cell battery voltage on the SB pin. The VSB
register is updated approximately once per second with
the present value of the battery voltage.
VSB = 2.4V ∗ (VSB/256)
The EDV1 values are:
FLGS1 Bits
VSB Register Bits
7
6
5
4
3
2
1
0
-
-
-
-
-
-
EDV1
-
7
6
5
4
3
2
1
0
VSB7 VSB6 VSB5 VSB4 VSB3 VSB2 VSB1 VSB0
12
bq2014
Temperature and Gas Gauge Register
(TMPGG)
Table 7. Temperature Register Translation
The read-only TMPGG register (address=02h) contains
two data fields. The first field contains the battery temperature. The second field contains the available charge
from the battery.
TMPGG Temperature Bits
7
6
5
TMP3 TMP2
4
TMP1 TMP0
3
2
1
-
-
-
0
The bq2014 contains an internal temperature sensor.
The temperature is used to set charge and discharge efficiency factors as well as to adjust the self-discharge coefficient. The temperature register contents may be
translated as shown in Table 7.
The bq2014 calculates the available charge as a function
of NAC, temperature, and LMD. The results of the calculation are available via the display port or the gas
gauge field of the TMPGG register. The register is used
to give available capacity in 116 increments from 0 to 1516.
6
5
4
3
2
1
0
-
-
-
-
GG3
GG2
GG1
GG0
TMP2
TMP1
TMP0
Temperature
0
0
0
0
T < -30°C
0
0
0
1
-30°C < T < -20°C
0
0
1
0
-20°C < T < -10°C
0
0
1
1
-10°C < T < 0°C
0
1
0
0
0°C < T < 10°C
0
1
0
1
10°C < T < 20°C
0
1
1
0
20°C < T < 30°C
0
1
1
1
30°C < T < 40°C
1
0
0
0
40°C < T < 50°C
1
0
0
1
50°C < T < 60°C
1
0
1
0
60°C < T < 70°C
1
0
1
1
70°C < T < 80°C
1
1
0
0
T > 80°C
On reset, NACH and NACL are cleared to 0. When the
bq2014 detects a charge, NACL resets to 0. NACH and
NACL are reset to 0 on the first valid charge after VSB =
EDV1. Writing to the NAC registers affects the available
charge counts and, therefore, affects the bq2014 gas
gauge operation. Do not write the NAC registers to a
value greater than LMD.
TMPGG Gas Gauge Bits
7
TMP3
Battery Identification Register (BATID)
The gas gauge display and the gas gauge portion of the
TMPGG register are adjusted for cold temperature dependencies. A piece-wise correction is performed as follows:
The read/write BATID register (address=04h) is available for use by the system to determine the type of battery pack. The BATID contents are retained as long as
VCC is greater than 2V. The contents of BATID have no
effect on the operation of the bq2014. There is no default setting for this register.
Temperature
Available Capacity Calculation
> 0°C
NAC / “Full Reference”
-20°C < T < 0°C
0.75 * NAC / “Full Reference”
Last Measured Discharge Register (LMD)
< -20°C
0.5 * NAC / “Full Reference”
LMD is a read/write register (address=05h) that the
bq2014 uses as a measured full reference. The bq2014
adjusts LMD based on the measured discharge capacity
of the battery from full to empty. In this way the bq2014
updates the capacity of the battery. LMD is set to PFC
during a bq2014 reset.
The adjustment between > 0°C and -20°C < T < 0°C has a
10°C hysteresis.
Nominal Available Charge Register
(NACH/NACL)
Secondary Status Flags Register (FLGS2)
The read-only FLGS2 register (address=06h) contains
the secondary bq2014 flags.
The read/write NACH register (address=03h) and the
read-only NACL low-byte register (address=17h) are the
main gas gauging registers for the bq2014. The NAC
registers are incremented during charge actions and
decremented during discharge and self-discharge actions. The correction factors for charge/discharge efficiency are applied automatically to NAC.
The charge rate flag (CR) is used to denote the fast
charge regime. Fast charge is assumed whenever a
charge action is initiated. The CR flag remains asserted
if the charge rate does not fall below 2 counts/sec.
13
bq2014
The CR values are:
pull-down resistors, the contents of PPD are xx101001.
(Note: DONE must be pulled down for proper operation.)
FLGS2 Bits
7
6
5
4
3
2
1
0
Program Pin Pull-Up Register (PPU)
CR
-
-
-
-
-
-
-
The read-only PPU register (address=08h) contains the
rest of the programming pin information for the bq2014.
The segment drivers, SEG1–5 and DONE, have corresponding PPU register locations, PPU1–6. A given location is set if a pull-up resistor has been detected on its
corresponding segment driver. For example, if SEG3 and
DONE have pull-up resistors, the contents of PPU are
xx100100.
Where CR is:
0
When charge rate falls below 2 counts/sec
1
When charge rate is above 2 counts/sec
The fast charge regime efficiency factors are used when
CR = 1. When CR = 0, the trickle charge efficiency factors are used. The time to change CR varies due to the
user-selectable count rates.
PPD/PPU Bits
The discharge rate flags, DR2–0, are bits 6–4.
FLGS2 Bits
7
6
5
4
3
2
1
-
DR2
DR1
DR0
-
-
-
0
DR1
DR0
VSR (V)
0
0
0
VSR > -150mV
0
0
1
VSR < -150mV
5
4
3
2
1
0
-
-
-
-
-
-
-
OVLD
PPU6 PPU5 PPU4 PPU3 PPU2 PPU1
6
5
4
3
2
1
-
-
PPD6 PPD5 PPD4 PPD3 PPD2 PPD1
The CPI register is incremented every time a valid
charge is detected. When NAC > 0.94 ∗ LMD, however,
the CPI register increments on the first valid charge;
CPI does not increment again for a valid charge until
NAC < 0.94 ∗ LMD. This prevents continuous trickle
charging from incrementing CPI if self-discharge decrements NAC. The CPI register increments to 255 without rolling over. When the contents of CPI are incremented to 64, the capacity inaccurate flag, CI, is asserted in the FLGS1 register. The CPI register is reset
whenever an update of the LMD register is performed,
and the CI flag is also cleared.
FLGS2 Bits
6
-
The read-only CPI register (address=09h) is used to indicate the number of times a battery has been charged
without an LMD update. Because the capacity of a rechargeable battery varies with age and operating conditions, the bq2014 adapts to the changing capacity over
time. A complete discharge from full (NAC=LMD) to
empty (EDV1=1) is required to perform an LMD update
assuming there have been no intervening valid charges,
the temperature is greater than or equal to 0°C, and the
self-discharge counter is less than 4096 counts.
The overload flag (OVLD) is asserted when a discharge
overload is detected, VSR < -250mV. OVLD remains asserted as long as the condition persists and is cleared after VSR > -150mV. The overload condition is used to stop
sampling of the battery terminal characteristics for
end-of-discharge determination when excessive discharges occur.
7
7
-
Capacity Inaccurate Count Register (CPI)
They are used to determine the current discharge regime as follows:
DR2
8
DR2–0 and OVLD are set based on the measurement of the
voltage at the SR pin relative to VSS. The rate at which
this measurement is made varies with device activity.
Digital Magnitude Filter (DMF)
The read-write DMF register (address=0Ah) provides
the system with a means to change the default settings
of the digital magnitude filter. By writing different values into this register, the limits of VSRD and VSRQ can be
adjusted.
Program Pin Pull-Down Register (PPD)
The read-only PPD register (address=07h) contains some
of the programming pin information for the bq2014. The
segment drivers, SEG1–5 and DONE, have corresponding
PPD register locations, PPD1–6. A given location is set if a
pull-down resistor has been detected on its corresponding
segment driver. For example, if SEG1 and SEG4 have
Note: Care should be taken when writing to this register. A VSRD and VSRQ below the specified VOS may adversely affect the accuracy of the bq2014. Refer to Table
4 for recommended settings for the DMF register.
14
bq2014
When DISP is tied to VCC, the SEG1–5 outputs are inactive. Note: DISP must be tied to VCC if the LEDs
are not used. When DISP is left floating, the display
becomes active whenever the NAC registers are counting at a rate equivalent to VSRO < -4mV or charge current is detected, VSRO > VSRQ. When pulled low, the segment outputs become active immediately. A capacitor
tied to DISP allows the display to remain active for a
short period of time after activation by a push-button
switch.
Reset Register (RST)
The reset register (address=39h) provides the means to
perform a software-controlled reset of the device. By
writing the RST register contents from 00h to 80h, a
bq2014 reset is performed. Setting any bit other than
the most-significant bit of the RST register is not allowed, and results in improper operation of the bq2014.
Resetting the bq2014 sets the following:
n
LMD = PFC
n
CPI, VDQ, NAC, and NACL = 0
n
CI and BRP = 1
The segment outputs are modulated as two banks of
three, with segments 1, 3, and 5 alternating with segments 2 and 4. The segment outputs are modulated at
approximately 100Hz, with each segment bank active
for 30% of the period.
Note: Self-discharge is disabled when PROG5 = H.
SEG1 blinks at a 4Hz rate whenever VSB has been detected to be below VEDV1 (EDV1 = 1), indicating a lowbattery condition. VSB below VEDVF (EDVF = 1) disables
the display output.
Display
The bq2014 can directly display capacity information using low-power LEDs. If LEDs are used, the program
pins should be resistively tied to VCC or VSS for a program high or program low, respectively..
Microregulator
The bq2014 can operate directly from 3 or 4 cells. To facilitate the power supply requirements of the bq2014, an REF
output is provided to regulate an external low-threshold nFET. A micropower source for the bq2014 can be inexpensively built using the FET and an external resistor; see
Figure 1.
The bq2014 displays the battery charge state in relative
mode. In relative mode, the battery charge is represented as a percentage of the LMD. Each LED segment
represents 20% of the LMD.
The capacity display is also adjusted for the present battery temperature. The temperature adjustment reflects
the available capacity at a given temperature but does
not affect the NAC register. The temperature adjustments are detailed in the TMPGG register description.
15
bq2014
Absolute Maximum Ratings
Minimum
Maximum
Unit
VCC
Symbol
Relative to VSS
Parameter
-0.3
7.0
V
All other pins
Relative to VSS
-0.3
7.0
V
REF
Relative to VSS
-0.3
8.5
V
Current limited by R1 (see Figure 1)
VSR
Relative to VSS
TOPR
Operating temperature
Note:
Notes
-0.3
7.0
V
Minimum 100Ω series resistor should
be used to protect SR in case of a
shorted battery (see the bq2014 application note for details).
0
70
°C
Commercial
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Voltage Thresholds (TA = TOPR; V = 3.0 to 6.5V)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
0.92
0.95
0.98
V
SB
VEDVF
Final empty warning, default
VEDV1
First empty warning, default
1.02
1.05
1.08
V
SB
VSR1
Discharge compensation threshold
-120
-150
-180
mV
SR
VSRO
SR sense range
-300
-
2000
mV
SR
VOVLD
Overload threshold
-220
-250
-280
mV
SR
VSRQ
Valid charge
375
-
-
µV
VSR + VOS (see note 1)
VSRD
Valid discharge
-
-
-300
µV
VSR + VOS (see note 1)
VMCV
Maximum single-cell voltage
2.20
2.25
2.30
V
SB
-
0.1
0.25
V
SB pulled low
2.20
2.25
2.30
V
SB pulled high
VBR
Battery removed/replaced
Notes:
1. Default value; value set in DMF register. VOS is affected by PC board layout. Proper layout guide
lines should be followed for optimal performance.
2. To ensure correct threshold determination and proper operation, VCC > VSB + 1.5V
16
bq2014
DC Electrical Characteristics (TA = TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
VCC
Supply voltage
3.0
4.25
6.5
V
VOS
Offset referred to VSR
±50
6.0
5.0
90
120
170
-
±150
6.3
7.5
135
180
250
2.4
5
0.2
-
µV
V
V
MΩ
µA
µA
µA
V
MΩ
µA
µA
KΩ
Notes
VCC excursion from < 2.0V to ≥
3.0V initializes the unit.
DISP = VCC
RREF
Reference at 25°C
Reference at -40°C to +85°C
Reference input impedance
ICC
Normal operation
VSB
RSBmax
IDISP
ILCOM
RDQ
Battery input
SB input impedance
DISP input leakage
LCOM input leakage
Internal pulldown
5.7
4.5
2.0
10
-0.2
500
VSR
Sense resistor input
-0.3
-
2.0
V
RSR
VIH
VIL
VIZ
SR input impedance
Logic input high
Logic input low
Logic input Z
10
VCC - 0.2
float
-
VSS + 0.2
float
MΩ
V
V
V
VOLSL
SEGX output low, low VCC
-
0.1
-
V
VOLSH
SEGX output low, high VCC
-
0.4
-
V
VOHLCL
VOHLCH
IIH
IIL
IOHLCOM
IOLS
LCOM output high, low VCC
LCOM output high, high VCC
PROG1-5 input high current
PROG1-5 input low current
LCOM source current
SEGX sink current
VCC - 0.3
VCC - 0.6
-33
-
1.2
1.2
-
11.0
V
V
µA
µA
mA
mA
IOL
Open-drain sink current
-
-
5.0
mA
VOL
VIHDQ
VILDQ
2.5
-
-
0.5
0.8
V
V
V
-
-
200
KΩ
PROG1–PROG5
RFLOAT
Open-drain output low
DQ input high
DQ input low
Soft pull-up or pull-down resistor value (for programming)
Float state external impedance
-
5
-
MΩ
PROG1–PROG5
Notes:
1. All voltages relative to VSS.
VREF
RPROG
2. DONE must be pulled low for proper operation.
17
IREF = 5µA
IREF = 5µA
VREF = 3V
VCC = 3.0V
VCC = 4.25V
VCC = 6.5V
0 < VSB < VCC
VDISP = VSS
DISP = VCC
VSR < VSS = discharge;
VSR > VSS = charge
-200mV < VSR < VCC
PROG1–PROG5
PROG1–PROG5; note 2
PROG1–PROG5
VCC = 3V, IOLS ≤ 1.75mA
SEG1–SEG5
VCC = 6.5V, IOLS ≤ 11.0mA
SEG1–SEG5
VCC = 3V, IOHLCOM = -5.25mA
VCC = 6.5V, IOHLCOM = -33.0mA
VPROG = VCC/2
VPROG = VCC/2
At VOHLCH = VCC - 0.6V
At VOLSH = 0.4V
At VOL = VSS + 0.3V
DQ, EMPTY, CHG
IOL ≤ 5mA, DQ, EMPTY
DQ
DQ
bq2014
Serial Communication Timing Specification
Symbol
Parameter
Minimum
Typical
Maximum
Unit
tCYCH
Cycle time, host to bq2014
3
-
-
ms
tCYCB
Cycle time, bq2014 to host
3
-
6
ms
tSTRH
Start hold, host to bq2014
5
-
-
ns
tSTRB
Start hold, bq2014 to host
500
-
-
µs
tDSU
Data setup
-
-
750
µs
tDH
Data hold
750
-
-
µs
tDV
Data valid
1.50
-
-
ms
tSSU
Stop setup
-
-
2.25
ms
tSH
Stop hold
700
-
-
µs
tSV
Stop valid
2.95
-
-
ms
tB
Break
3
-
-
ms
tBR
Break recovery
1
-
-
ms
Note:
Notes
See note
The open-drain DQ pin should be pulled to at least VCC by the host system for proper DQ operation.
DQ may be left floating if the serial interface is not used.
Serial Communication Timing Illustration
DQ
(R/W "1")
DQ
(R/W "0")
tSTRH
tSTRB
tDH
tDSU
tDV
tSH
tSSU
DQ
tSV
(BREAK)
tCYCH, tCYCB, tB
tBR
TD201002.eps
18
bq2014
16-Pin SOIC Narrow (SN)
16-Pin SN (SOIC Narrow)
D
e
Dimension
Minimum
A
0.060
A1
0.004
B
0.013
C
0.007
D
0.385
E
0.150
e
0.045
H
0.225
L
0.015
All dimensions are in inches.
B
E
H
A
C
A1
Maximum
0.070
0.010
0.020
0.010
0.400
0.160
0.055
0.245
0.035
.004
L
Data Sheet Revision History
ChangeNo.
Page No.
1
1, 3, 5, 6, 7, 13, 15
1
Notes:
Description
Nature of Change
Changed display mode
Relative display mode only
1, 17
DONE pin
Removed PROG6
1
2, 17
DONE pin
Added: DONE pin must be pulled to VSS
with a 200KΩ resistor
1
6
Table 1
Removed PROG6
1
7
DONE input
Was: NAC is set to 90%...
Is: NAC is set to 94%...
1
8, Table 3
PROG5 = Z
Was: PROG5 = Z or H
Is: PROG5 = Z
2
8
Temperature Compensation table
Replaced
2
6
Table 2
Added VSR definition
2
6
Valid charge definition
Added definition
2
14
Overload flag
Was: 0.5sec. after VSR> -250mV
Is: after VSR = -150mV
Change 1 = Dec. 1994 B “Final” changes from Aug. 1994 A “Preliminary.”
Change 2 = Dec. 1995 C from Dec. 1994 B.
19
bq2014
Ordering Information
bq2014
Temperature Range:
blank = Commercial (0 to +70°C)
Package Option:
SN = 16-pin narrow SOIC
Device:
bq2014 Gas Gauge IC
17919 Waterview Parkway
Dallas, Texas 75252
Fax: (972) 437-9198
Tel: (972) 437-9195
www.benchmarq.com or www.unitrode.com
Copyright © 1995, Unitrode Corporation. All rights reserved. No part of this data sheet may be reproduced in any
form or means, without express permission from Unitrode. Unitrode reserves the right to make changes in its products without notice.
Unitrode assumes no responsibility for use of any products or circuitry described within. No license for use of intellectual property (patents, copyrights, or other rights) owned by Unitrode or other parties is granted or implied.
Unitrode does not authorize the use of its components in life-support systems where failure or malfunction may
cause injury to the user. If Unitrode components are used in life-support systems, the user assumes all responsibilities and indemnifies Unitrode from all liability or damages.
Benchmarq is a registered trademark of Unitrode Corporation
20
Printed in U.S.A.
PACKAGE OPTION ADDENDUM
www.ti.com
8-Mar-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
BQ2014SN-D120
ACTIVE
SOIC
D
16
40
None
CU NIPDAU
Level-1-220C-UNLIM
BQ2014SN-D120TR
ACTIVE
SOIC
D
16
2500
None
CU NIPDAU
Level-1-220C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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