SLUS607 − MAY 2004
FEATURES
D Communicates Directly With the Integrated
D
D
D
D
D
D
D
D
D
D
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D
D
DESCRIPTION
HDQ Engine in TI OMAP Processor
Multifunction Monitoring Integrated Circuit
Designed to Work With an Intelligent Host
Controller :
− Provides State of Charge Information for
Rechargeable Batteries
− Provides Accurate Battery Voltage and
Temperature Measurement
High Accuracy Coulometric Charge and
Discharge Current Integration With
Automatic Offset Compensation
11-Bit Analog-to-Digital Converter Reports
Battery Voltage With Gain and Offset
Correction
Differential Current Sense
32 Bytes of General Purpose RAM
96 Bytes of Flash (Including 32 Bytes of
Shadow Flash)
8 Bytes of ID ROM
Internal Temperature Sensor Eliminates the
Need for an External Thermistor
Programmable Digital Input/Output Port
High-Accuracy Internal Timebase Eliminates
External Crystal Oscillator
Low Power Consumption:
− Operating : 30 µA
− Sleep: 1 µA
− Hibernate: 600 nA
Single-Wire HDQ Serial Interface
Packaging: 8-LEAD TSSOP
The bq26221 is an advanced battery monitoring
device designed to accurately measure the
charge and discharge currents in rechargeable
battery packs. Intended for pack integration, the
bq26221 contains all the necessary functions to
form the basis of a comprehensive battery
capacity management system in portable
applications such as cellular phones, PDAs, or
other portable products.
The bq26221 works with the host controller in the
portable system to implement the battery
management system. The host controller is
responsible for interpreting the bq26221 data and
communicating meaningful battery data to the
end-user or power management system.
This device provides 64 bytes of general-purpose
flash memory, 8 bytes of ID ROM and 32 bytes of
flash-backed RAM for data storage. The
nonvolatile memory can maintain formatted
battery monitor information, identification codes,
warranty information, or other critical battery
parameters during periods when the battery is
temporarily shorted or deeply discharged.
PW PACKAGE
(TOP VIEW)
RBI
VCC
VSS
HDQ
1
2
3
4
8
7
6
5
GPIO
SRP
SRN
BAT
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
!"#$%! & '("")% $& ! *(+'$%! ,$%)
"!,('%& '!!"# %! &*)''$%!& *)" %.) %)"#& ! )/$& &%"(#)%&
&%$,$", 0$""$%1- "!,('%! *"!')&&2 ,!)& !% )')&&$"+1 '+(,)
%)&%2 ! $++ *$"$#)%)"&-
Copyright 2004, Texas Instruments Incorporated
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1
SLUS607 − MAY 2004
ORDERING INFORMATION{
TA
−20_C to 70_C
PACKAGE
PART NUMBER
TSSOP
bq26221PW
TOP MARKING
26221
† PW (TSSOP−8) package is available taped and reeled. Add R suffix to device type (e.g. bq26221PWR) to
order quantities of 2000 devices per reel for TSSOP-8.
ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted)(1)
bq26221
Supply voltage (VCC with respect to GND)
UNIT
−0.3 to +7.0
Input voltage, SRP and SRN, RBI, GPIO and BAT (all with respect to GND)
−0.3 V to VCC + 0.3 V
Input voltage, HDQ (with respect to GND)
V
−0.3 to +7.0
Output current (GPIO)
5
Output current (HDQ)
5
Operating free-air temperature range, TA
mA
−20°C to 70°C
Storage temperature range, Tstg
°C
C
− 65°C to 150°C
Lead temperature (soldering, 10 s)
300
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only,
and operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
RECOMMENDED OPERATING CONDITIONS
PARAMETER
MIN
MAX
UNIT
VCC
V(POR)
Supply voltage
2.8
4.5
V
Power-on reset voltage
1.9
2.45
V
TA
Operating ambient temperature
−20
70
_C
2
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SLUS607 − MAY 2004
dc electrical characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
ICC(OP)
I(SLEEP)
TEST CONDITIONS
Supply current
Sleep current
I(HIBERNATE) Hibernate current
ICC(PROG) Flash programming supply current
ICC(ERASE) Flash erase supply current
I(RBI)
Register back-up current
IOL
VIL
MIN
VCC = 4.3 V, flash programming not active
VCC = 4.3 V, flash programming not active
Digital output low sink current, GPIO
and HDQ pins
TYP
1
5
600
VCC = 5.5
VCC = 5.5
21
30
21
30
1.2 V< VCC < V(POR)
Digital input high, GPIO and HDQ pins
RBAT
BAT input impedance
RSR
SRP, SRN input impedance
µA
A
nA
mA
25
nA
1
mA
VOL = 0.4 V
Digital input low, GPIO and HDQ pins
VIH
UNIT
37
0 < VCC < VPOR
RBI pin only,
MAX
30
0.7
VCC < 4.2 V
VCC > 4.2 V
1.7
V
1.9
10
M
MΩ
10
0.2 V < (V(SRP) − V(SRN)) < VCC
timer characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
E(TMR)
TEST CONDITIONS
Timer accuracy error
MIN
TYP
−4%
MAX
UNIT
4%
temperature register characteristics over recommended operating temperature and supply
voltage (unless otherwise noted)
PARAMETER
T(RES)
E(T)
TEST CONDITIONS
MIN
Reported temperature resolution
Reported temperature
accuracy
BQ26221PW
TYP
MAX
UNIT
0.25
TSSOP package
−4
4
_K
voltage ADC specification, over recommended operating temperature and supply voltage, (unless
otherwise noted)
PARAMETER
Least significant bit (LSB)(1)
TEST CONDITIONS
MIN
2.6 V ≤ VBAT ≤ 4.5 V
Integral nonlinearity (INL)
2.6 V ≤ VBAT ≤ 4.5 V, Vcc=VBAT
−4
Differential nonlinearity (DNL)
2.6 V ≤ VBAT ≤ 4.5 V, Vcc=VBAT
Offset error
2.6 V ≤ VBAT ≤ 4.5 V, Vcc=VBAT
Maximum error
2.6 V ≤ VBAT ≤ 4.5 V, Vcc=VBAT
TYP
MAX
UNIT
+4
LSB
−1
+1
LSB
−3
+14
LSB
−9
+15
LSB
2.44
mV
NOTE 1. For a more detailed explantion of parameters refer to the application note, Understanding Data Converters, TI Literature No. SLAA013.
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3
SLUS607 − MAY 2004
VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
VI(SR)
G(VFC)
Input voltage VSRP − VSRN
G(VCC)
Supply voltage gain coefficient
G(TCO)
Temperature gain coefficient
INL
Integrated nonlinearity
−100 mV < (V(SRP) − V(SRN)) < 100 mV
V(COS)
Auto compensated offset
2.8 V ≤ VCC ≤ 4.2 V
Charge/discharge gain
MIN
TYP
−100
Temperature = 25 _C,
VCC = 3.6
−100 mV < (V(SRP) − V(SRN)) < 100 mV
90.0
−20
93.5
MAX
UNIT
100
mV
97.0
Hz/V
0.5
%/V
0.005
%/_C
0.2%
0.5%
−1
20
µV
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
Data retention
5
Flash programming write-cycles
t(BYTEPROG) Byte programming time
RAM-to-flash block programming
t(BLCKPROG)
time
t(BLKERASE) Block-erase time
UNIT
10,000
Years
Cycles
90
60 µs + 30 µs/byte
1020
60 µs + 30 µs/byte
1020
µs
standard serial communication (HDQ) timing specification over recommended operating
temperature and supply voltage (unless otherwise noted). See Figures 1 and 2.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
T(B)
T(BR)
Break timing
Break recovery
40
T(CYCH)
T(HW1)
Host bit window
190
Host sends 1
0.5
50
T(HW0)
T(RSPS)
Host sends 0
92
145
190
320
190
250
bq26221 to host response
T(CYCB)
bq26221 bit window
T(start−detect) (1)
T(DW1)
T(DW0)
UNIT
190
5
µs
ns
bq26221, sends 1
32
50
bq26221, sends 0
80
145
µss
NOTE 1. The HDQ engine of the bq26221 interpret a 5 ns or longer glitch on HDQ as a bit start. A sufficient number of glitches at 5 ns or longer
could result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur.
4
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SLUS607 − MAY 2004
PARAMETER MEASUREMENT INFORMATION
T(B)
T(BR)
T(CYCH)
T(HW1)
T(HW0)
T(CYCB)
T(DW1)
T(DW0)
Figure 1. HDQ Timing Diagram
COMMAND BYTE
(Written by Host to bq26221)
BREAK
DATA BYTE
(Received by Host From bq26221)
REGISTER ADDRESS
0
(LSB)
1
2
3
4
5
6
0
(LSB)
7
(MSB)
1
2
3
4
5
6
7
(MSB)
t(RSPS)
Figure 2. Typical Communication with the bq26221
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SLUS607 − MAY 2004
FUNCTIONAL BLOCK DIAGRAM
Bandgap,
Reference and
Bias
VCC
SRP
Temperature
Compensated
Precision
Oscillator
Autocalibrating
VFC
SRN
Timer
System I/O
and Control
User
Registers
RAM
GPIO
HDQ
RBI
Temperature
Sensor
Flash
Multiplexer
ADC
BAT
ID
VSS
UDG−02050
TERMINAL FUNCTIONS
TERMINAL
DESCRIPTION
No.
BAT
5
I
Battery voltage sense input. This pin is used for sensing and measuring the battery voltage.
RBI
1
I
Register backup input. The RBI input pin is used with a storage capacitor or external supply to
provide backup potential to the internal RAM and registers while VCC is < V(POR).
GPIO
8
I/O
General-purpose input/output pin. GPIO is a general-purpose programmable input or output port
whose state is controlled via the HDQ serial communications interface.
HDQ
4
I/O
Single-wire HDQ interface. HDQ is a single-wire serial communications interface port. This
bidirectional input/output communicates the register information to the host.
SRN
6
I/O
NAME
6
I
Current sense input 2. The bq26221 interprets charge and discharge activity by monitoring and
integrating the voltage drop, VSR, across pins SRP and SRN. The SRN input connects to the
sense resistor and the negative terminal of the pack. VSRP < VSRN indicates discharge, and
VSRP > VSRN indicates charge.
I
Current sense input 1. The bq26221 interprets charge and discharge activity by monitoring and
integrating the voltage drop, VSR, across pins SRP and SRN. The SRP input connects to the
sense resistor and the negative terminal of the battery. VSRP < VSRN indicates discharge, and
VSRP > VSRN indicates charge.
SRP
7
VCC
2
I
Supply voltage
VSS
3
−
Ground
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SLUS607 − MAY 2004
APPLICATION INFORMATION
PACK+
U1
C4
0.1 µF
C3
0.1 µF
+
bq26221PW
1
RBI
GPIO 8
R2
100 kΩ
Additional ESD
Protection
R5
R4
100 Ω
100 Ω
HDQ
2
VCC
SRP 7
3
VSS
SRN 6
4
HDQ
BAT 5
D1
5.6 V
C1
0.1 µF
R3
100 kΩ
R1
0.02 Ω
C2
0.1 µF
Protection Controller
PACK−
UDG−04012
Figure 3. Typical Application Circuit for a Single-Cell Li-Ion Application
functional description
The bq26221 measures the voltage drop across a low-value series current-sense resistor between the SRP
and SRN pins using a voltage-to-frequency converter. The cell voltage is sensed between the BAT and VSS
pins. All data is placed into various internal counter and timer registers. Using information from the bq26221,
the system host can determine the battery state-of-charge, estimate self discharge, and calculate the average
charge and discharge currents. During pack storage periods, the use of an internal temperature sensor doubles
the self-discharge count rate every 10°C above 25°C. The VFC offset is automatically compensated for in the
charge and discharge counter registers.
Access to the registers and control of the bq26221 is accomplished through a single-wire interface through a
register mapped command protocol. This protocol includes placing the device in the low-power mode,
hardware-register reset, programming flash from RAM, and transferring flash data to RAM.
The bq26221 can operate directly from a single Li-Ion cell as long as VCC is between 2.8 V and 4.5 V.
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7
SLUS607 − MAY 2004
APPLICATION INFORMATION
charge and discharge count operation
Table 1 shows the main counters and registers of the bq26221.
The bq26221 accumulates charge and discharge counts into two count registers, the charge count register
(CCR) and the discharge count register (DCR). Charge and discharge counts are generated by sensing the
voltage difference between SRP and SRN. The CCR or DCR independently counts, depending on the signal
between pins SRP and SRN.
During discharge, the DCR and the discharge time counter (DTC) are active. If (V(SRP) − V(SRN)) is less than
0, (indicating a discharge activity), the DCR counts at a rate equivalent to one count per 3.0 µVH, and the DTC
counts at a rate of 1.138 counts per second (4096 counts = 1 hour). For example, if no rollover of the DTC
register is incipient, a negative 24.42-mV signal produces 8000 DCR counts and 4096 DTC counts each hour.
The amount of charge removed from the battery is easily calculated.
During charge, the CCR and the charge time counter (CTC) are active. If (V(SRP) − V(SRN)) is greater than 0,
(indicating a charge), the CCR counts at a rate equivalent to one count per 3.0 µVH, and the CTC counts at a
rate of 1.138 counts per seconds. In this case a 24.42-mV signal produces 8000 CCR counts and 4096 CTC
counts (assuming no rollover) each hour.
The DTC and the CTC are 16-bit registers, with roll over beyond FFFFH. If a rollover occurs, the corresponding
bit in the MODE register is set, and the counter increments at 1/256 of the normal rate (16 counts per hour).
While in normal operation, the internal RAM and flash registers of the bq26221 may be accessed over the HDQ
pin.
For self-discharge calculation, the self-discharge count register (SCR) counts at a rate of one count every hour
at a nominal 25°C. The SCR count rate doubles approximately every 10°C up to 60°C. The SCR count rate is
halved every 10°C below 25°C down to 0°C. The value in SCR is useful in estimating the battery self-discharge
based on capacity and storage temperature conditions.
Table 4 shows the bq26221 register memory map. The remaining memory can store user-specific information
such as chemistry, serial number, and manufacturing date.
sleep mode operation
The bq26221 begins low-power operation in response to the host issuing the sleep command. Before entering
the low-power state, the host processor writes the command to transfer the registers to flash. After the sleep
command is sent and the charge/discharge activity is less than the value indicated by the WOE bits shown in
Table 2, the chip clock is powered down and data acquisitions functions cease except for self-discharge
detection. During device sleep the bq26221 periodically wakes briefly to maintain the self-discharge registers.
The bq26221 wakes on either a low-to-high or high-to-low transition on the HDQ pin.
Table 3 shows which registers are active during normal operation, sleep, and hibernate.
Table 1. bq26221 Counters
NAME
8
DESCRIPTION
RANGE
RAM SIZE
(BITS)
16
Charge count register
(V(SRP) − V(SRN)) < VSS (Max. =−100 mV) 3.0 µV/LSB
(V(SRP) − V(SRN)) > VSS (Max. = 100 mV) 3.0 µV/LSB
Self-discharge count register
1 count/hour at 25°C
16
DCR
Discharge count register
CCR
SCR
DTC
Discharge time counter
CTC
Charge time counter
1 count/0.8789 s (default)
1 count/225 s if STD is set
1 count/0.8789 s (default)
1 count/225 s if STC is set
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16
16
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SLUS607 − MAY 2004
APPLICATION INFORMATION
Table 2. WOE Thresholds
WOE3–1 (HEX)
0h
VWOE (mV)
n/a
1h
3.516
2h
1.758
3h
1.172
4h
0.879
5h
0.703
6h
0.586
7h
0.502
Table 3. Operational States
MODE
ACTIVE REGISTERS
Normal
CCR, DCR, CTC, DTC, SDR
Sleep
SDR
Hibernate
No active registers
hibernate mode operation
The bq26221 enters hibernate mode when Vcc drops below the POR threshold, V(POR). In this mode, the
bq26221 draws current from the RBI pin to maintain RAM data. The bq26221 exits hibernate mode only when
Vcc is raised above the POR threshold.
current sense offset calibration and compensation
The bq26221 automatically and continuously compensates for V(SRP) − V(SRN) offset. No host calibration or
compensation is required.
gas gauge control registers
The host maintains the charge and discharge and the self-discharge count registers (CCR, CTC, DCR, DTC,
and SCR). To facilitate this maintenance, the bq26221 CLR register resets the specific counter or register pair
to zero. The host system clears a register by writing the corresponding register bit to 1. When the bq26221
completes the reset, the corresponding bit in the CLR register is automatically reset to 0. Clearing the DTC or
CTC registers clears the MODE register bits STC/STD and sets the CTC/DTC count rates to the default value
of 1.138 counts per second.
device temperature measurement
The bq26221 reports die temperature in units of oK through register pair TMPH−TMPL. Refer to the TMP
register description for more details.
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9
SLUS607 − MAY 2004
APPLICATION INFORMATION
battery voltage measurement
The bq26221 senses the battery voltage on the BAT pin and reports it through register pair BATH−BATL. The
BATH (address = 0x72 – bits 0 through 2) and the BATL low-byte register (address = 0x71) contain the result
of ADC conversion on the battery voltage. The voltage is expressed in an 11-bit binary format with an LSB step
size of 2.44 mV. Bit 2 of BATH register represents the MSB and bit 0 of the BATL represent the LSB. The
full-scale voltage for this measurement is 5 V and is optimized for direct sensing in single-cell Li-Ion or Li-pol
applications (see Figure 3).
Note that Bits 3 through 7 of the BATH register store the offset information for the voltage ADC. The most
significant bit is the sign-bit followed by 4 bits of offset data.
Also note that LSB gain correction factor, in µV, is stored in address 0x79 (byte 1 of the ID ROM) in 2’s
complement. The host is responsible for applying the LSB gain correction factor and offset to the ADC
measurements.
Correct VBAT = VBAT × (2.44 + LSB correction factor) − offset
example 1: (If real LSB = + 2.45mV and offset = +80 mV)
in address 0x79 ⇒ 0000 1010 (in binary) 2’s complement
in BATH (0x72) ⇒ 0101 0XXX (in binary) signed magnitude
To calculate the correct VBAT:
LSB correction factor = +10 µV = +0.01 mV
offset = +10 × 8 mV = 80 mV
Correct VBAT (in mV) = VBAT × (2.44 + 0.01) − 80
example 2: (If real LSB = +2.43 mV and offset = −80 mV
in address 0x79 ⇒ 1111 0110 (in binary), 2’s complement
in BATH (0x72) ⇒ 1101 0XXX (in binary), signed magnitude
To calculate the correct VBAT:
LSB correction factor = −10 µV= −0.01 mV
offset = −10 × 8 mV = −80 mV
Correct VBAT (in mV) = VBAT × (2.44 − 0.01) − (−80)
10
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SLUS607 − MAY 2004
APPLICATION INFORMATION
register interface
Information is exchanged between host system and the bq26221 through the data-register interface. See
Table 4 below. The register set consists of a 122-location address space of 8-bit bytes segmented into
•
•
•
•
8 bytes of factory programmed ID ROM
32 bytes of flash shadowed RAM
64 bytes of general purpose flash
18 special function registers
Table 4. Memory Map
HDQ
ADDRESS
NAME
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
0x78−0x7F
IDROM
8 bytes of factory-programmed ROM and gain correction factor for BATH and BATL
0x73−0x77
−
Reserved
0x72
BATH
BV−SIGN
0x71
BATL
Battery voltage (bits 0 through 7)
0x70
FPA
Flash program address byte
0x6F
FPD
Flash program data byte
0x6E
DCRH
Discharge count register-high byte
0x6D
DCRL
Discharge count register-low byte
0x6C
CCRH
Charge count register-high byte
0x6B
CCRL
Charge count register-low byte
0x6A
SCRH
Self-discharge count register-high byte
0x69
SCRL
Self−discharge count register-low byte
0x68
DTCH
Discharge timer counter register-high byte
0x67
DTCL
Discharge timer count register-low byte
0x66
CTCH
Charge timer counter register-high byte
0x65
CTCL
Charge timer counter register-low byte
0x64
MODE
GPIEN
STAT
STC
STD
WOE2
WOE1
WOE0
POR
0x63
CLR
RSVD
RSVD
RSVD
CTC
DTC
SCR
CCR
DCR
0x62
FCMD
Flash/control command register
0x61
TEMPH
Temperature-high byte (bits 0 through 2 only, other bits are reserved)
0x60
TEMPL
Temperature-low byte
0x40−0x5F
Flash
Page 2, 32 bytes of flash
0x20−0x3F
Flash
Page 1, 32 bytes of flash
0x00−0x1F
RAM/flash
Page 0, 32 bytes of flash shadowed RAM
BVOS3
BVOS2
BVOS1
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BVOS0
Battery voltage (bits 8 through 10)
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SLUS607 − MAY 2004
APPLICATION INFORMATION
memory
ID ROM
Locations 0x7F through 0x78 contain the factory programmed ID ROM and also the LSB gain correction factor
for the voltage analog to digital converter. The format for this register is described in Table 5.
Table 5. ID ROM Command Code Summary
BYTE
RAM LOCATION
INFORMATION
7
0x7F
Device code 0x22
6
0x7E
0x00
5
0x7D
Random
4
0x7C
Random
3
0x7B
Random
2
0x7A
Random
1
0x79
Gain correction factor
0
0x78
Random
NOTE:For additional information please contact Texas Instruments.
flash-shadowed RAM
The host system has direct access to read and modify 32 bytes of RAM. These 32 bytes are shadowed by 32
bytes of flash to provide nonvolatile storage of battery conditions. The information stored in RAM is transferred
to flash, and the information stored in flash is transferred to RAM by writing a single command into the flash
command register (FCMD). When a power-on-reset occurs, page 0 of flash is transferred to RAM. For more
details, refer to the flash command register section.
user-flash memory
In addition to the flash-shadowed RAM, the bq26221 has 64 bytes of user-flash. The user-flash can store
specific battery pack parameters, such as charge per VFC pulse, battery chemistry, and self-discharge rates.
flash programming
The two banks of direct user-flash are programmed one byte at a time, but the single bank of flash-shadowed
RAM can be programmed one page at a time or by writing the RAM-to-flash transfer code into the flash
command register (FCMD). This programming is performed by writing the desired code into the flash command
register, FCMD (address 0x62), the host may transfer data between flash and RAM, page erase the flash or
place the device into the low power mode. For more details, refer to the flash command register section.
Summaries of the flash command codes are shown in Table 6.
Table 6. Flash Command Code Summary
COMMAND CODE
(HEX)
12
DESCRIPTION
0x0F
Program byte
0x40
Erase page 0 flash
0x41
Erase page 1 flash
0x42
Erase page 2 flash
0x45
Transfer page 0 RAM to page 0 flash
0x48
Transfer page 0 flash to page 0 RAM
0xF6
Power down
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APPLICATION INFORMATION
single-byte programming
To program an individual byte in flash, the byte of data is first written into the FPD register while the address
to be programmed is written into the FPA register. The program byte command, 0x0F, is then written to the
FCMD. The result of this sequence is that the contents of the FPD register is logically ANDed with the contents
of the flash address pointed to by the FPA register.
RAM-to-flash transfer
The content of the flash that shadows the user RAM is logically ANDed to the RAM contents when the
RAM-to-flash transfer command is sent. If new data is to be written over old data, then it is necessary to first
erase the flash page that is being updated and restore all necessary data.
communicating with the bq26221
The bq26221 includes a single-wire HDQ serial data interface. Host processors, configured for either polled or
interrupt processing, use the interface to access various bq26221 registers. The HDQ pin requires an external
pull-up resistor. The interface uses a command-based protocol, where the host processor sends a command
byte to the bq26221. The command directs the bq26221 either to store the next eight bits of data received to
a register specified by the command byte, or, to output the eight bits of data from a register specified by the
command byte.
The communication protocol is asynchronous return-to-one and is referenced to VSS. Command and data
bytes consist of a stream of eight bits that have a maximum transmission rate of 5 Kbits/s. The least-significant
bit of a command or data byte is transmitted first. Data input from the bq26221 may be sampled using the
pulse-width capture timers available on some microcontrollers. A UART, (universal asynchronous receiver
transmitter), also communicates with the bq26221.
If a communication time out occurs (for example, if the host waits longer than t(CYCB) for the bq26221 to respond
or if this is the first access command), then a BREAK should be sent by the host. The host may then resend
the command. The bq26221 detects a BREAK when the HDQ pin is driven to a logic-low state for a time t(B)
or greater. The HDQ pin then returns to its normal ready-high logic state for a time t(BR).The bq26221 is then
ready for a command from the host processor.
The return-to-one data-bit frame consists of three distinct sections:
1. The first section starts the transmission by either the host or the bq26221 taking the HDQ pin to a logic-low
state for a period equal to t(HW1) or t(DW1).
2. The next section is the actual data transmission, where the data should be valid by a period equal to t(HW1)
or t(DW1), after the negative edge that starts communication. The data should be held for t(HW0) and t(DW0)
periods to allow the host or bq26221 to sample the data bit.
3. The final section stops the transmission by returning the HDQ pin to a logic-high state by at least a period
equal to t(DW0) or t(HW0) after the negative edge used to start communication. The final logic-high state
should be held until a period equal to t(CYCH) or t(CYCB), to allow time to ensure that the bit transmission
ceased properly.
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13
SLUS607 − MAY 2004
APPLICATION INFORMATION
The serial communication timing specification and illustration sections give the timings for data and break
communication. Communication with the bq26221 always occurs with the least significant bit being transmitted
first. Figure 4 shows an example of a communication sequence to read the bq26221 DCRH register.
COMMAND BYTE
(Written by Host to bq26221)
BREAK
DATA BYTE (DCRH) = 64h
(Received by Host From bq26221)
CMDR=6Eh
0
(LSB)
0
1
2
3
4
5
1
1
1
0
1
6
1
0
(LSB)
7
(MSB)
0
0
1
2
3
4
5
6
0
1
0
0
1
1
7
(MSB)
0
MSB
LSB
64h=0 1 1 0 0 1 0 0
MSB
LSB
6Eh=0 1 1 0 1 1 1 0
Figure 4. bq26221 Communication Sequence
command byte
The command byte of the bq26221 consists of eight contiguous valid command bits. The command byte
contains two fields: W/R Command and address. The W/R bit of the command register determines whether the
command is a read or a write command while the address field containing bit AD6−AD0 indicates the address
to be read or written. The command byte values are shown in Table 7.
Table 7. Command Byte Values
COMMAND BYTE
7
6
5
4
3
2
1
0
W/R
AD6
AD5
AD4
AD3
AD2
AD1
AD0
Table 8. Command Byte Definitions
Indicates whether the command byte is a read or write command. A 1 indicates a write command and that the
following eight bits should be written to the register specified by the address field of the command byte, while a
0 indicates that the command is a read. On a read command, the bq26221 outputs the requested register
contents specified by the address field portion of the command byte.
W/R
AD6−AD0
The seven bits labeled AD6−AD0 containing the address portion of the register to be accessed.
bq26221 registers
register maintenance
The host system is responsible for register maintenance. (See Table 4.) To facilitate this maintenance, the
bq26221 clear register (CLR) resets the specific counter or register pair to zero. The host system clears a
register by writing the corresponding register bit to 1. When the bq26221 completes the reset, the corresponding
bit in the CLR register automatically resets to 0, saving the host an extra write/read cycle. Clearing the DTC
register clears the STD bit and sets the DTC count rate to the default value of one count per 0.8789 s. Clearing
the CTC register clears the STC bit and sets the CTC count rate to the default value of one count per 0.8789 s.
14
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SLUS607 − MAY 2004
APPLICATION INFORMATION
register descriptions
battery voltage offset registers (BATH)
Bits 3 through 7 of the BATH register (address = 0x72) store the offset information for the voltage ADC. The most
significant bit is the sign bit followed by 4 bits of offset data. Each count of offset represents 8 mV. The host is
responsible for subtracting the offset for the measurement from the uncorrected value found in BATH and BATL
registers. This is a signed magnitude number with Bit 7 being the sign bit. A 1 in Bit 7 means that the number
is negative.
battery voltage registers (BATH/BATL)
The BATH (address = 0x72 – bits 0 through 2) and the BATL low-byte register (address = 0x71) contain the result
of ADC conversion on the battery voltage. The voltage is expressed in an 11-bit binary format with an LSB step
size of 2.44 mV. Bit 3 of BATH register represents the MSB and bit 0 of the BATL represent the LSB.
flash program address register (FPA)
The FPA byte register (address = 0x70) points to the flash address location that is programmed when the
program flash command is issued. This byte is used with the FPD and FCMD register to program an individual
byte in flash memory.
flash program data register (FPD)
The FPD byte register (address = 0x6F) contains the data to be programmed into the flash address location
pointed to by the contents of the FPA register. When the program flash command is issued, the contents of the
FPD register are ANDed with the contents of the byte pointed to by the FPA and then stored into that location.
discharge count registers (DCRH/DCRL)
The DCRH high-byte register (address = 0x6E) and the DCRL low-byte register (address = 0x6D) contain the
count of the discharge, and are incremented whenever VSR < VSS These registers continue to count beyond
FFFFH, so proper register maintenance by the host system is necessary. The CLR register forces the reset of
both the DCRH and DCRL to zero.
charge count registers (CCRH/CCRL)
The CCRH high-byte register (address = 0x6C) and the CCRL low-byte register (address = 0x6B) contain the
count of the charge, and are incremented whenever VSR > VSS. These registers continue to count beyond
FFFFH, so proper register maintenance should be done by the host system. The CLR register forces the reset
of both the CCRH and CCRL to zero.
self-discharge count registers (SCRH/SCRL)
The SCRH high-byte register (address = 0x6A) and the SCRL low-byte register (address = 0x69) contain the
self-discharge count. This register is continually updated in both the normal operating and sleep modes of the
bq26221. The counts in these registers are incremented based on time and temperature. The SCR counts at
a rate of one count per hour at 20°C to 30°C. The count rate doubles every 10°C up to a maximum of 16
counts/hour at temperatures above 60°C. The count rate halves every 10°C below 20°C to 30°C to a minimum
of one count/8 hours at temperature below 0°C. These registers continue to count beyond FFFFH, so proper
register maintenance should be done by the host system. The CLR register forces the reset of both the SCRH
and SCRL to zero. During device sleep the bq26221 periodically wake for a brief amount of time to maintain
the self-discharge registers.
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15
SLUS607 − MAY 2004
APPLICATION INFORMATION
discharge time count registers (DTCH/DTCL)
The DTCH high-byte register (address = 0x68) and the DTCL low-byte register (address = 0x67) determine the
length of time the VSR < VSS indicating a discharge. The counts in these registers are incremented at a rate of
4096 counts per hour. If the DTCH/DTCL register continues to count beyond FFFFH, the STD bit is set in the
MODE/WOE register, indicating a rollover. Once set, DTCH and DTCL increment at a rate of 16 counts per hour.
Note: If a second rollover occurs, STD is cleared. Access to the bq26221 should be timed to clear DTCH/DTCL
more often than every 170 days. The CLR register forces the reset of both the DTCH and DTCL to zero.
charge-time count registers (CTCH/CTCL)
The CTCH high-byte register (address = 0x66) and the CTCL low-byte register (address = 0x65) determine the
length of time the VSR >VSS, indicating a charge activity. The counts in these registers are incremented at a rate
of 4096 counts per hour. If the CTCH/CTCL registers continue to count beyond FFFFH, the STC bit is set in the
MODE/WOE register indicating a rollover. Once set, DTCH and DTCL increment at a rate of 16 counts per hour.
Note: If a second rollover occurs, STC is cleared. Access to the bq26221 should be timed to clear CTCH/CTCL
more often than every 170 days. The CLR register forces the reset of both the CTCH and CTCL to zero.
mode register (MODE)
The MODE register (address 0x64) contains the GPIEN, STAT, STC, STD, POR and wake-up enable
information as described in Table 9.
Table 9. MODE Register Values
MODE BITS
7
6
5
4
3
2
1
(MSB)
GPIEN
0
(LSB)
STAT
STC
STD
WOE2
WOE1
WOE0
POR
Table 10. MODE Register Definitions
GPIEN
GPIEN bit (bit 7) sets the state of the GPIO pin. A 1 configures the GPIO pin as input, while a 0 configures the
GPIO pin as open-drain output. This bit is set to 0 on power-on-reset.
STAT
STAT bit (bit 6) sets the state of the open drain output of the GPIO pin (when configured as output by bit 7). A 1
turns off the open drain output while a 0 turns the output on. This bit is set to 1 on power-on-reset.
STC & STD
WOE[2.0]
POR
16
The slow time charge (STC) and slow time discharge (STD) flags indicate if the CTC or DTC registers have
rolled over beyond FFFFH. STC set to 1 indicates a CTC rollover; STD set to 1 indicates a DTC rollover.
The wake-up output enable (WOE) bits (bits 3, 2 and 1) indicate the voltage level required between SRP and
SRN so that the bq26221 enters sleep mode after a power down command is issued. Whenever |VSRP − VSRN|
< VWOE, the bq26221 enters sleep mode after the power down command has been issued. On bq26221
power-on-reset these bits are set to 1. Setting all of these bits to zero is valid, but result in immediate sleep.
Refer to Table 3 for the various WOE values.
POR bit (bit 0) indicates a power-on-reset has occurred. This bit is set when VCC has gone below the POR
level. This bit can be also set and cleared by the host, but has no functionality if set by host.
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APPLICATION INFORMATION
clear register (CLR)
The bits in the CLR register (address 0x63) clear the DCR, CCR, SCR, DTC, and CTC registers, reset the
bq26221 by forcing a power-on-reset and setting the state of the STAT pin as described in Table 11.
Table 11. CLR Register
CLR BITS
7
6
5
4
3
2
1
(MSB)
RSVD
0
(LSB)
RSVD
RSVD
CTC
DTC
SCR
CCR
DCR
Table 12. CLR Register Definitions
RSVD
RSVD bits (bits 5, 6 and 7) are reserved for future use and should be written to 0 by the host.
CTC
CTC bit (bit 4) clears the CTCH and CTCL registers and the STC bit. A 1 clears the corresponding registers and
bit. After the registers are cleared, the CTC bit is cleared. This bit is cleared on power-on-reset.
DTC
DTC bit (bit 3) clears the DTCH and DTCL registers and the STD bit. A 1 clears the corresponding registers and
bit. After the registers are cleared, the DTC bit is cleared. This bit is cleared on power-on-reset.
SCR
SCR bit (bit 2) clears both the SCRH and SCRL registers. Writing a 1 to this bit clears the SCRH and SCRL
register. After these registers are cleared, the SCR bit is cleared. This bit is cleared on power-on-reset.
CCR
CCR bit (bit 1) clears both the CCRH and CCRL registers. Writing a 1 to this bit clears the CCRH and CCRL
registers. After these registers are cleared, the CCR bit is cleared. This bit is cleared on power-on-reset.
DCR
DCR bit (bit 0) clears both the DCRH and DCRL registers. Writing a 1 to this bit clears the DCRH and DCRL
registers. After these registers are cleared, the DCR bit is cleared. This bit is cleared on power-on-reset.
flash command register (FCMD)
The FCMD register (address 0x62) is the flash command register and programs a single flash byte-location,
perform flash page erase, transfer RAM to flash and flash to RAM, enter sleep mode, and power-down. These
functions are performed by writing the desired command code to the FCMD register. After the bq26221 has
finished executing the issued command, the flash command register is cleared.
Table 13. FCMD Register Definitions
0x0F
Program byte command code. This code ANDs the contents of the FPD register with the contents of flash byte
location pointed to by the contents of the FPA register.
0x40
Erase page 0 command code. This code erases all the bytes of flash from address 0x00 to 0x1F.
0x41
Erase page 1 command code. This code erases all the bytes of flash from address 0x20 to 0x3F.
0x42
Erase page 2 command code. This code erases all the bytes of flash from address 0x40 to 0x5F.
0x45
RAM-to-flash transfer code. This code programs the contents of the RAM into Page 0 flash, addresses 0x00
though 0x1F.
0x48
Flash-to-RAM transfer code. This code copies the contents of the page 0 flash into RAM.
0xF6
Power-down code. This code places the bq26221 into the sleep mode when the conditions are met as indicated
by the WOE bits in the MODE/WOE register. The part remains in sleep mode until a high-to-low or low-to-high
transition occurs on the HDQ pin.
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SLUS607 − MAY 2004
APPLICATION INFORMATION
temperature registers (TMPH, TMPL)
The TMPH (address 0x61) and the TMPL registers (address 0x60) reports die temperature in hex format in units
of 0.25_K.The temperature is reported as 11 bits of data, using all 8 bits of the TMPL low register and the 3 bits
of the TMPH register. The temperature should be read as the concatenation of TMPH [2:0] and TMPL [7:0],
0.25_K/LSB. The 5 MSBs of TMPH, TMPH [7:3], are cleared on POR and are reserved. The 5 bits should also
be masked off when reading the temperature, to ensure that incorrect data is not used when calculating the
temperature.
18
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MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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