SANYO 2MP03SF

2MP03SF
Ordering number : EN8379A
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
2MP03SF
High-Frequency General-Purpose
Amplifier Applications
Features
•
•
•
•
High fT : fT=230MHz (typ).
Small reverse transfer capacitance : Cre=0.9pF (typ).
Low NF : (2.5dB typ)
Small package permitting 2MP03SF applied sets to made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
Collector-to-Emitter Voltage
VCEO
--20
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
Junction Temperature
IC
PC
Tj
Storage Temperature
Tstg
Collector Dissipation
V
--30
mA
150
mW
150
°C
--55 to +150
°C
Mounted on a ceramic board (600mm2✕0.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=--10V, IE=0A
VEB=--4V, IC=0A
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VCE=--6V, IC=--1mA
VCE=--6V, IC=--1mA
Reverse Transfer Capacitance
Cre
Noise Figure
NF
VCB=--6V, IC=1MHz
VCE=--6V, IC=--1mA, f=100MHz
Ratings
min
typ
60
150
max
Unit
--0.1
µA
--0.1
µA
200
230
0.9
MHz
1.7
2.5
pF
dB
Marking : WC
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406 MS IM TB-00002140 / 70505AA MS IM TB-00001576 No.8379-1/4
2MP03SF
Package Dimensions
unit : mm
7029-002
Top View
0.3
1.4
0.25
0.8
1.4
3
2
1
0.1
0.3
0.2
0.07
0.6
0.45
1 : Base
2 : Emitter
3 : Collector
0.07
2
1
3
SANYO : SSFP
Bottom View
IC -- VCE
--10
IC -- VBE
--40
VCE= --6V
Collector Current, IC -- mA
Collector Current, IC -- mA
--70µA
--8
--60µA
--50µA
--6
--40µA
--30µA
--4
--20µA
--2
IB=0µA
--2
--4
--6
--8
--10
0
--10
Collector-to-Emitter Voltage, VCE -- V
0
--0.2
7
5
--0.8
--1.0
--1.2
IT09533
f=100MHz
7
5
V
CE =
3
2
--12
V
--6
V
100
7
5
V
--3
Gain-Bandwidth Product, f T -- MHz
100
--0.6
fT -- IC
1000
VCE= --6V
2
--0.4
Base-to-Emitter Voltage, VBE -- V
IT09532
hFE -- IC
3
DC Current Gain, hFE
--20
--10µA
0
0
3
--0.1
--30
3
2
10
2
3
5
7 --1.0
2
3
5
7 --10
Collector Current, IC -- mA
2
3
5
IT09921
--1.0
2
2
3
5
7
--10
Collector Current, IC -- mA
3
5
IT09540
No.8379-2/4
2MP03SF
Cob -- VCB
5
Reverse Transfer Capacitance, Cre -- pF
Output Capacitance, Cob -- pF
Cre -- VCB
3
f=1MHz
3
2
1.0
7
f=1MHz
2
1.0
7
5
3
5
7
2
--1.0
3
5
7
2
--10
3
Collector-to-Base Voltage, VCB -- V
5
7
VCE(sat) -- IC
--1.0
2
3
5
7 --10
2
Collector-to-Base Voltage, VCB -- V
--1.0
IT09541
VCE= --6V
f=100MHz
Power Gain, PG -- dB
Noise Figure, NF -- dB
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
14
5
3
2
--0.1
12
PG
10
8
6
4
NF
2
7
5
--1.0
2
3
5
7
2
--10
3
5
Collector Current, IC -- mA
IT09922
PC -- Ta
200
Collector Dissipation, PC -- mW
5
IT09542
PG, NF -- IC
16
IC / IB=10
7
3
150
0
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Collector Current, IC -- mA
2
3
IT09923
M
ou
nte
do
na
ce
ram
100
ic
bo
ard
(6
00
mm
50
2
✕0
.8
mm
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT09807
No.8379-3/4
2MP03SF
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
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This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
PS No.8379-4/4