CPH6002 Ordering number : ENA0262 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6002 High-Frequency Medium-Power Amplifier Applications Features • • • High fT (fT=3.0GHz typ). Large current (IC=200mA). Large collector dissipation (800mW max). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 Collector-to-Emitter Voltage VCEO 30 V Emitter-to-Base Voltage VEBO 2 V Collector Current Junction Temperature IC PC Tj Storage Temperature Tstg Collector Dissipation Mounted on a ceramic board (900mm2✕0.8mm) V 200 mA 800 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Reverse Transfer Capacitance Conditions VCB=20V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA Ratings min typ max 100 Unit 1.0 µA 5.0 µA 200 3.0 GHz Cob VCE=5V, IC=50mA VCB=5V, f=1MHz 2.7 pF Cre VCB=5V, f=1MHz 1.9 pF Marking : GB Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806AB MS IM TB-00002247 No. A0262-1/3 CPH6002 Package Dimensions unit : mm 7018-002 0.4 5 0.15 4 0.2 2.8 0.05 0.6 1.6 0.6 6 1 2 3 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector 0.95 0.7 0.9 0.2 2.9 SANYO : CPH6 IC -- VCE 90 140 400µ A 70 60 DC Current Gain, hFE Collector Current, IC -- mA VCE=5V µA 500 80 hFE -- IC 160 300µA 50 40 200µA 30 20 120 100 80 60 40 100µA 20 10 IB=0µA 0 5 0 10 15 20 0 1.0 25 Collector-to-Emitter Voltage, VCE -- V 3 5 7 10 2 3 5 7 100 2 S21e2 -- IC 25 Forward Transfer Gain, S21e2 -- dB Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 400 300 200 100 0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT10486 5 7 1000 IT10485 VCE=5V IC / IB=10 500 3 Collector Current, IC -- mA VCE(sat) -- IC 600 2 IT10484 Hz f=200M 20 15 500MHz 10 5 0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 IT10487 No. A0262-2/3 f T -- IC 7 VCE=5V Gain-Bandwidth Product, f T -- GHz 5 3 2 1.0 7 5 3 2 0 1.0 2 3 5 7 2 10 3 5 7 100 2 Collector Current, IC -- mA IT10488 PC -- Ta 1.2 Collector Dissipation, PC -- W 3 0.8 Output Capacitance, Reverse Transfer Capacitance, Cob, Cre -- pF CPH6002 Cob, Cre -- VCB 6 f=1MHz 5 4 3 Cob 2 Cre 1 0 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT10489 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 2 ✕0 .8m 0.2 m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10490 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No. A0262-3/3