SBR250-10JS Ordering number : ENA1658 SANYO Semiconductors DATA SHEET SBR250-10JS Schottky Barrier Diode (Twin Type • Cathode Common) 100V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low reverse current. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Symbol Conditions Ratings VRRM VRSM Unit 100 V 105 V 25 A 50Hz resistive load, sine wave Tc=59°C Surge Forward Current IO IFSM 120 A Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C 50Hz sine wave, 1 cycle Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Symbol Conditions VR VF IR IR=5mA, Tj=25°C * IF=12.5A, Tj=25°C * Interterminal Capacitance C Thermal Resistance Rth(j-c) VR=10V, Tj=25°C * Junction-Case : Smoothed DC Forward Voltage Reverse Current Ratings min typ max 100 Unit V VR=50V, Tj=25°C * 0.85 V 300 μA 3.0 °C / W 450 pF Note) * : Value per element Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710SD TK IM TC-00002262 No. A1658-1/3 SBR250-10JS Package Dimensions Electrical Connection unit : mm (typ) 7525-001 1 10.0 3 1 : Anode 2 : Cathode 3 : Anode 4.5 3.2 Top view 2 3.6 16.0 7.2 3.5 2.8 1.6 14.0 1.2 0.75 1 2 3 0.7 2.4 1 : Anode 2 : Cathode 3 : Anode 2.55 SANYO : TO-220ML(LS) 2.55 IF -- VF Reverse Current, IR -- mA 3 2 10 7 5 3 2 1.0 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V PF(AV) -- IO 35 30 25 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ =180° Rectangular wave 1.4 (3) (2) (4) (1) 20 θ 360° 15 10 Sine wave 5 180° 0 0 2 4 6 8 100 7 5 3 2 typ 50°C Tj=1 10 7 5 3 2 125° 0.1 7 5 3 2 0.01 360° 10 12 14 16 18 20 22 24 26 28 30 Average Output Current, IO -- A IT06346 p C ty C typ 100° 1.0 7 5 3 2 75°C 0 20 typ 40 60 80 IT06345 PR(AV) -- VRM 25 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 20 PR max at Tj=150°C (1) 360° θ Rectangular wave 15 120 100 Reverse Voltage, VR -- V IT06344 Average Reverse Power Dissipation, PR(AV) -- W 0.1 IR -- VR 2 Tj =1 5 25 °C 0°C typ typ Forward Current, IF -- A 100 7 5 (2) VR (3) Sine wave 180° 10 360° VR 5 0 (4) 0 10 20 30 40 50 60 70 80 Peak Reverse Voltage, VRM -- V 90 100 110 IT06347 No. A1658-2/3 SBR250-10JS Tc -- IO Rectangular wave θ 360° 90 (4) 60 Sine wave 180° 30 (1) 360° 0 10 5 (2) (3) 20 15 25 Average Output Current, IO -- A IFSM -- t 140 Surge Forward Current, IFSM(Peak) -- A f=100kHz Interterminal Capacitance, C -- pF 120 20ms t 80 60 40 20 0 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 7 5 3 2 100 2 3 IT06350 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT06349 2 3 5 7 10 2 3 IT06351 Reverse Voltage, VR -- V IT06348 IS 100 1000 7 30 Current waveform 50Hz sine wave Tj=150°C 120 C -- VR 2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Transient Thermal Resistance Rth(j - c) -- °C / W Case Temperature, Tc -- °C 150 5 Rth(j - c) -- t 3 2 1.0 7 5 3 2 0.1 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1658-3/3