SANYO SBE818

SBE818
Ordering number : ENA1379
SANYO Semiconductors
DATA SHEET
SBE818
Low IR Schottky Barrier Diode
30V, 2.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting.
Small switching noise.
Low forward voltage (IF=2.0A, VF max=0.62V).
Low reverse current (VR=15V, IR max=7.5μA).
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm).
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
V
When mounted on ceramic substrate, Rectangular wave 180°C
2.0
A
When mounted on glass epoxy substrate
1.5
A
50Hz sine wave, 1 cycle
20
A
Average Output Current
IO
Surge Forward Current
IFSM
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : SC
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),
and between Terminal 3 and Terminal 5 (or 6).
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
D0308SB MS IM TC-00001737 No. A1379-1/4
SBE818
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Symbol
Reverse Voltage
Ratings
Conditions
min
VR
VF1
IR=1mA
IF=1.0A
VF2
VF3
IF=1.5A
IF=2.0A
Interterminal Capacitance
IR
C
VR=15V
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
When mounted in Cu-foiled area of
Forward Voltage
Reverse Current
Rth(j-a)1
Thermal Resistance
8
7
6
5
1
2
3
4
0.2
0.125
2.1
1.7
0.58
V
0.57
0.62
V
7.5
μA
pF
ns
100
°C / W
65
°C / W
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Top view
0.2
4
0.5
V
0.53
Electrical Connection
5
1
0.53
10
unit : mm (typ)
7045-004
0.2
V
0.48
30
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
Unit
max
30
0.96mm2×0.03mm on glass epoxy substrate
Rth(j-a)2
8
typ
0.05
0.75
2.0
*: Terminal 4 is used for the purposes such as
test. Although it is connected to Anode 2,
please handle it as NC Terminal
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
trr Test Circuit
100Ω
10μs
10Ω
10mA
50Ω
100mA 100mA
Duty≤10%
--5V
trr
No. A1379-2/4
SBE818
IF -- VF
3
2
Reverse Current, IR -- μA
Forward Current, IF -- μA
3
2
Ta
=1
100 25°C
°C
75°
C
50°
C
25 °
C
0°C
--25
°C
1E-01
7
5
3
2
1E-02
7
5
75°C
1E+01
50°C
0.2
0.3
0.4
0.5
1E-02
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
1.6
1.4
1.2
(3)
(4)
10
Rectangular
wave
3.0E--05
Rectangular
wave
Sine wave
0.4
0.2
360°
1.0
1.5
2.0
2.5
0.0E+00
Rectangular
wave
75
50
θ
360°
25
(3)
Sine
wave
(1)
180°
(2)
0.2
0.6
0.4
0.8
1.0
1.2
(5)
(4)
1.4
1.8
1.6
Average Output Current, IO -- A
7
5
3
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT13217
30
35
IT14259
Rectangular
wave
75
θ
360°
50
Sine
wave
25
(1)
(2)
(4)
360°
0
1.0
0.5
1.5
(3) (5)
2.5
2.0
Average Output Current, IO -- A
Surge Forward Current, IFSM(Peak) -- A
100
2
100
IT14261
IFSM -- t
24
2
25
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
IT14260
f=1MHz
20
Ta -- IO
125
0
2.0
3
10
0.1
15
180°
C -- VR
5
10
Average Reverse Voltage, VR -- V
360°
0
5
0
150
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
100
(4)
IT14258
Ta -- IO
125
360°
180°
5.0E--06
180°
0.5
(3)
1.0E--05
Sine wave
0
(2)
VR
1.5E--05
360°
(1)
VR
2.5E--05
θ
30
IT14257
360°
θ
2.0E--05
0.6
25
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
3.5E--05
1.0
20
PR(AV) -- VR
4.5E--05
(5)
15
Reverse Voltage, VR -- V
4.0E--05
0.8
5
0
5.0E--05
(2)
(1)
1E-04
Ambient Temperature, Ta -- °C
Average Forward Power Dissipation, PF(AV) -- W
--25°C
IT14256
PF(AV) -- IO
1.8
150
Ambient Temperature, Ta -- °C
0°C
1E-01
0.6
Average Reverse Power Dissipation, PR(AV) -- W
0.1
0
Average Output Current, IO -- A
Interterminal Capacitance, C -- pF
25°C
1E+00
1E-03
Forward Voltage, VF -- V
0
100°C
1E+02
3
2
0
Ta=125°C
1E+03
1E+00
7
5
1E-03
IR -- VR
1E+04
Current waveform 50Hz sine wave
20
IS
20ms
t
16
12
8
4
0
0.01
2
3
5
7 0.1
2
3
Time, t -- s
5
7 1.0
2
3
IT13214
No. A1379-3/4
SBE818
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1379-4/4