BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 2 3 3 2 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P tot V isol T stg Tj April 2002 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature BU208A TO - 3 150 Value 1500 700 10 8 15 BU508A BU508AFI TO - 218 ISOWATT218 125 50 2500 -65 to 175 -65 to 150 175 150 -65 to 150 150 Unit V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA R thj-case Thermal Resistance Junction-case TO-3 TO-218 ISOWATT218 1 1 2.5 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ. T C = 125 o C I C = 100 mA Max. Unit 1 2 mA mA 100 µA 700 V 10 V Emitter Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1.3 V ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 4.5 A h FE = 2.5 V CC = 140 V L C = 0.9 mH L B = 3 µH fT Transition Frequency I C = 0.1 A V EBO V CE = 5 V f = 5 MHz 7 550 µs ns 7 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area (TO-3) 2/8 Safe Operating Areas (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218) DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure 1: Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 5/8 BU208A / BU508A / BU508AFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 31 0.163 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 6/8 1 2 3 P025A BU208A / BU508A / BU508AFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 7/8 BU208A / BU508A / BU508AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8