ETC ST1802FH

ST1802FH

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
NEW SERIES, ENHANCED PERFORMANCE
EASY MOUNTING
HIGH VOLTAGE CAPABILITY ( > 1500 V )
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS
FULLY MOLDED INSULATED PACKAGE
(U.L. COMPLIANT) FOR EASY MOUNTING
CREEPAGE DISTANCE PATH > 4 mm
APPLICATIONS:
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HORIZONTAL DEFLECTION FOR COLOR
TVs UP TO 21 INCHES
DESCRIPTION
The device is manufactured using Diffused
Collector Technology for more stable operation
Vs base drive circuit variations resulting in very
low worst case dissipation.
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (I E = 0)
1500
V
V CEO
Collector-Emitter Voltage (IB = 0)
600
V
V EBO
Emitter-Base Voltage (IC = 0)
IC
I CM
IB
Parameter
7
V
Collector Current
10
A
Collector Peak Current (tp < 5 ms)
15
A
4
A
40
W
2500
V
Base Current
o
P t ot
Total Dissipation at Tc = 25 C
V i so l
Insulation W ithstand Voltage (RMS) from All
Three Leads to External Heatsink
St orage Temperature
T stg
Tj
Max. Operating Junction Temperature
December 2002
-65 to 150
o
C
150
o
C
1/6
ST1802FH
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
3.125
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I EBO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut-off Current
(I C = 0)
V EB = 7 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
o
T C = 125 C
I C = 100 mA
L = 25 mH
Max.
Un it
1
2
mA
mA
1
mA
600
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 4 A
IB = 0.8 A
IB = 1.2 A
5
1.5
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
I C = 4.5 A
IB = 1 A
1.2
V
DC Current Gain
IC = 1 A
IC = 5 A
IC = 5 A
V CE = 5 V
V CE = 1 V
V CE = 5 V
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 4 A
L B = 5 µH
f = 16 KHz
IBon (END) = 1 A
V BB(o ff) = -2.5 V
(see figure 1)
h F E∗
ts
tf
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/6
Thermal Impedance
25
4.5
4
9
2.6
0.2
4
0.6
µs
µs
ST1802FH
Derating Curve
Output Characteristics
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DC Current Gain
3/6
ST1802FH
Power Losses At 16 KHz
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
4/6
Switching Time Inductive Load
ST1802FH
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.3
1.8
0.051
0.070
F2
1.3
1.8
0.051
0.070
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
16
L3
28.6
L4
9.8
L5
0.409
0.630
30.6
1.126
10.6
0.385
3.4
1.204
0.417
0.134
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
L8
14.5
15
0.570
L9
2.4
0.590
0.094
P011W
5/6
ST1802FH
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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