STMICROELECTRONICS THD215HI

THD215HI

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS
■
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
DESCRIPTION
This device is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhance switching speeds.
The THD series is designed for use in horizontal
deflection circuits in televisions and monitors.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (IE = 0)
1500
V
V CEO
Collector-Emitter Voltage (I B = 0)
700
V
V EBO
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
10
A
Collector Peak Current (tp < 5 ms)
20
A
5
A
10
A
IC
I CM
IB
I BM
Parameter
Base Current
Base Peak Current (t p < 5 ms)
o
P t ot
Total Dissipation at T c = 25 C
T stg
St orage Temperature
Tj
Max. Operating Junction Temperature
December 1999
57
W
-65 to 150
o
C
150
o
C
1/6
THD215HI
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
2.2
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
I CEO
Collector Cut-off
Current (IB = 0)
V CE = 700 V
10
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
10
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
100
µA
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
700
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 6 A
I B = 1.2 A
1.3
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 6 A
I B = 1.2 A
1.3
V
DC Current G ain
I C = 10 mA
IC = 6 A
IC = 6 A
h FE∗
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
V CE = 5 V
V CE = 5 V
V CE = 5 V
o
Tj = 125 C
I C = 4.5 A
I B1 = 1.5 A
f = 64 KHz
I B2 = -2.4 A
 π 6
V c eflybac k = 1100 sin 10  t V
5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/6
Thermal Impedance
10
6
4
13
3.3
160
µs
ns
THD215HI
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 64 KHz
Switching Time Inductive Load at 64 KHz
3/6
THD215HI
Reverse Biased SOA
4/6
THD215HI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
3.7
0.138
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
0.146
P025C/A
5/6
THD215HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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