BUF410A High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Very high switching speed ■ Minimum lot-to-lot spread for reliable operation ■ Low base-drive requirements Applications 3 2 ■ Switch mode power supplies ■ Motor control 1 TO-247 Description The BUF410A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BUF410A BUF410A TO-247 Tube March 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 1 BUF410A Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCEV Collector-emitter voltage (V BE = -1.5 V) 1000 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 15 A Collector peak current (tP < 5 ms) 30 A Base current 3 A IC ICM IB IBM Base peak current (tP < 5 ms) 4.5 A Ptot Total dissipation at Tc = 25 °C 125 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 1 °C/W TJ Table 3. Symbol Rthj-case 2/9 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max BUF410A 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions ICER Collector cut-off current (RBE = 10 Ω) ICEV Collector cut-off current (VBE = -1.5 V) IEBO Emitter cut-off current VEB = 5 V (IC = 0) Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO VCE(sat) (1) Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Max. Unit VCE = 1000 V TC = 100 °C 0.2 1 mA mA TC = 100 °C 0.2 1 mA mA 1 mA VCE = 1000 V VCE = 1000 V IC = 200 mA IE = 50 mA IC = 5 A IB = 0.5 A IC = 5 A IB = 0.5 A TC = 100 °C VCE(dyn) VCE(dyn) ts tf tc Rate of rise on-state collector current V 7 V 0.8 V 2.8 0.5 TC = 100 °C IB = 0.5 A 0.9 IB = 0.5 A TC = 100 °C IC = 10 A IB = 2 A 1.5 V V 1.5 VCC = 300 V R C = 0 tp = 3 µs IB1 = 0.75 A TC = 25 °C V V 1.1 TC = 100 °C V V 2 IC = 5 A IC = 10 A IB = 2 A dic / dt 450 IC = 10 A IB = 2 A IC = 5 A Base-emitter saturation voltage Typ. VCE = 1000 V IC = 10 A IB = 2 A VBE(sat) (1) Min. 60 V A/µs IB1 = 0.75 A TC = 100 °C 45 A/µs IB1 = 3 A TC = 100 °C 100 A/µs Collector-emitter dynamic voltage (3 µs) VCC = 300 V R C = 60 Ω IB1 = 0.75 A TC = 25 °C IB1 = 0.75 A TC = 100 °C Collector-emitter dynamic voltage (5 µs) VCC = 300 V R C = 60 Ω IB1 = 0.75 A TC = 25 °C IB1 = 0.75 A TC = 100 °C Inductive load Storage time Fall time Cross over time IC = 5 A VCC = 50 V VBB = -5 V RBB = 1.2 Ω 0.8 µs VClamp = 400 V IB1 = 0.5 A 0.05 µs 0.08 µs L = 0.5 mH 2.1 V 8 1.1 V V 4 V 3/9 Electrical characteristics Table 4. Symbol ts tf tc VCEW BUF410A Electrical characteristics (continued) Parameter Inductive load Storage time Fall time Cross over time Maximum collector emitter voltage without snubber Test conditions Min. Typ. Max. Unit IC = 5 A VCC = 50 V VBB = -5 V RBB = 1.2 Ω 1.8 µs VClamp = 400 V IB1 = 0.5 A 0.1 µs L = 0.5 mH TC = 100 °C 0.18 µs IC = 5 A VCC = 50 V VBB = -5 V RBB = 1.2 Ω IB1 = 0.5 A L = 0.5 mH 500 V TC = 125 °C ts tf tc ts tf tc VCEW Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time Maximum collector emitter voltage without snubber IC = 5 A VCC = 50 V VBB = 0 RBB = 0.3 Ω 1.5 µs VClamp = 400 V IB1 = 0.5 A 0.04 µs 0.07 µs L = 0.5 mH IC = 5 A VCC = 50 V VBB = 0 RBB = 0.3 Ω 3 µs VClamp = 400 V IB1 = 0.5 A 0.15 µs L = 0.5 mH TC = 100 °C 0.25 µs IC = 5 A VCC = 50 V VBB = 0 RBB = 0.3 Ω IB1 = 0.5 A L = 0.5 mH 500 V TC = 125 °C ts tf tc ts tf tc VCEW Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time Maximum collector emitter voltage without snubber IC = 10 A V CC = 50 V VBB = -5 V RBB = 1.2 Ω 1.9 µs IB1 = 2 A 0.06 µs 0.12 µs VClamp = 400 V L = 0.25 mH IC = 10 A V CC = 50 V VBB = -5 V RBB = 1.2 Ω 3.2 µs VClamp = 400 V IB1 = 2 A 0.12 µs L = 0.25 mH TC = 100 °C 0.3 µs IC = 15 A V CC = 50 V VBB = -5 V RBB = 1.2 Ω IB1 = 3 A L = 0.1 mH TC = 125 °C 1. Pulse duration = 300 µs, duty cycle ≤ 1.5% 4/9 400 V BUF410A 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. 2.2 Forward biased safe operating area Figure 3. Reverse biased safe operating area Test circuit Figure 4. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data 3 BUF410A Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 BUF410A Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ Max. 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 L1 3.70 L2 4.30 18.50 øP 3.55 øR 4.50 S 14.80 3.65 5.50 5.50 7/9 Revision history 4 BUF410A Revision history Table 5. 8/9 Document revision history Date Revision 18-Mar-2002 2 13-Mar-2008 3 Changes Package change from TO-218 to TO-247. BUF410A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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