BULB49DT4 High voltage fast-switching NPN power transistor General features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ ■ Surface mounting TO-263 (D2PAK) power package 1 3 TO-263 D2PAK In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Internal schematic diagrams The device is designed for use in electronic transformer for halogen lamps. Applications ■ Electronic transformers for halogen lamps ■ Flyback and forward single transistor low power converters Order codes Part Number Marking Package Packing BULB49DT4 BULB49D D 2PAK Tape & reel July 2006 Rev 2 1/11 www.st.com 11 BULB49DT4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 BULB49DT4 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (V BE =0) 850 V VCEO Collector-emitter voltage (IB =0) 450 V VEBO Emitter-base voltage (IC =0, IB <2A, tP < 10ms) V(BR)EBO V Collector current 5 A Collector peak current (tP < 5ms) 10 A Base current 2 A IBM Base peak current (tP < 5ms) 4 A Ptot Total dissipation at T c ≤ 25°C 80 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 1.56 62.5 °C/W °C/W IC ICM IB TJ Table 2. Symbol Rthj-case Rthj-amb Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max 3/11 Electrical characteristics 2 BULB49DT4 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test Conditions Collector cut-off current (VBE =0) IEBO Emitter cut-off current (IC =0) VEB = 9V Emitter-base brakdown voltage (IC = 0) IE =10mA 10 Collector-emitter VCEO(sus)(1) sustaining voltage (I = 0) IC =10mA B 450 VCE(sat) (1) VBE(sat) (1) hFE (1) VCEW ts tf ts tf VF (1) Collector-emitter saturation voltage VCE = 850V IC =1A Tj = 125°C IC =2A _ _ IB =0.2A _ _ IB =0.4A IC =4A IC =1A Unit 100 500 µA µA 100 µA 18 V V __ _ IB =0.8A V V V _ _ IB =0.2A _ _ IB =0.8A 1 1.3 V V IC =4A IC =10mA V CE =5V DC current gain IC =500mA V CE =5V IC =7A VCE =10V Resistive load Storage time Fall time Max. 0.3 0.6 1.2 Base-emitter saturation voltage Maximum collectoremitter voltage without snubber Typ. VCE = 850V ICES V(BR)EBO IC =8A VBB= -2.5V L =50µH R BB =0 0.1 10 60 4 10 450 V tp =10µs VCC =250V IC =2A IB1=-IB2 =400mA tp =30µs 3 µs 0.8 µs 0.5 1.3 µs 50 100 ns 1.5 V 2 (see figure 11) Inductive load Storage time Fall time VCL =300V IC =4A IB(on) =800mA RBB(off) =0 VBE(off) =-5V L =1mH Diode forward voltage IC = 3A (see figure 12) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 4/11 Min. BULB49DT4 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Derating current Figure 3. Output characteristics Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. DC current gain 5/11 Electrical characteristics 6/11 BULB49DT4 Figure 7. DC current gain Figure 8. Inductive load storage time Figure 9. Inductive load fall time Figure 10. Reverse biased safe operating area BULB49DT4 2.2 Electrical characteristics Test circuits Figure 11. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Figure 12. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 7/11 Package mechanical data 3 BULB49DT4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 BULB49DT4 Package mechanical data TO-263 (D2PAK) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.036 B2 1.14 1.70 0.044 0.067 C 0.45 0.60 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8.00 10.00 E1 0.368 0.315 10.40 0.393 8.50 0.409 0.334 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.40 1.75 0.055 0.068 M 2.40 3.2 0.094 R V2 0.40 0o - Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 µm 0.126 0.016 8o 0o 8o P011P6/G 9/11 Revision history 4 BULB49DT4 Revision history Table 4. 10/11 Revision history Date Revision Changes 10-Sep-2003 1 First release. 21-Jul-2006 2 New template BULB49DT4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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