BUV48A High voltage fast switching NPN power transistor Features ■ NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power convertes 1 TO-247 Figure 1. Description Internal schematic diagram The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains. Table 1. Device summary Order code Marking Package Packaging BUV48A BUV48A TO-247 Tube October 2007 Rev 8 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCER Collector-emitter voltage (RBE = 10Ω) 1000 V VCES Collector-emitter voltage (VBE = 0) 1000 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 15 A ICM Collector peak current 30 A ICP Collector peak current non repetitive (tp < 20µs) 55 A IB Base current 4 A Base peak current 20 A PTOT Total dissipation at Tcase = 25°C 125 W Tstg Storage temperature -65 to 150 °C 150 °C IC IBM TJ Table 3. Symbol Rthj-case 2/8 BUV48A Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max Value Unit 1 °C/W BUV48A 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Collector cut-off current VCE = 1000 V (V BE = 0) VCE = 1000 V ICER Collector cut-off current (R BE = 10Ω) VCE = 1000 V IEBO Emitter cut-off current (IC = 0) ICES Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) VCE = 1000 V Min. Typ. Max. Unit 200 µA Tc = 125°C 2 mA 500 4 µA Tc = 125°C mA 1 mA VEB = 5V IC = 200mA 450 IE = 50mA V 7 30 V V V VCE(sat)(1) Collector-emitter saturation voltage IC = 8A IB = 1.6A IC = 12A IB = 2.4A 1.5 5 VBE(sat)(1) Base-emitter saturation voltage IC = 8A IB = 1.6A 1.6 V 1 µs 3 µs 0.8 µs ton ts tf ts tf ts tf Resistive load Turn-on time Storage time Fall time VCC = 150V IC = 8A IB1 = -IB2 = 1.6A Inductive load Storage time Fall time VCC = 300 V IC = 8A VBE = -5V IB1 = 1.6A Inductive load Storage time Fall time VCC = 300 V IC = 8A VBE = -5V IB1 = 1.6A 5 µs LB = 3µH T C = 125oC 0.4 µs LB = 3µH 3 µs 0.13 µs 1. Pulsed duration = 300 ms, duty cycle ≤2%. 3/8 Electrical characteristics 2.1 Test circuit Figure 2. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Figure 3. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 4/8 BUV48A BUV48A Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data BUV48A TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 6/8 Typ 3.65 5.50 5.50 BUV48A Revision history 4 Revision history Table 5. Document revision history Date Revision 02-Jan-2000 7 29-Oct-2007 8 Changes Package change from TO-218 to TO-247. 7/8 BUV48A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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