HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wide range of optimum drive conditions ■ Stable performance versus operating temperature variation Applications ■ 1 High-definition and slim CRT TV and monitors 3 TO-264 Description The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1. 2 Internal schematic diagram Device summary Part number Marking Package Packaging HD1760JL HD1760JL TO-264 Tube June 2007 Rev 3 1/10 www.st.com 10 Electrical ratings 1 HD1760JL Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1700 V VCEO Collector-emitter voltage (IB = 0) 800 V VEBO Emitte-base voltage (IC = 0) 10 V Collector current 36 A Collector peak current (tP < 5ms) 54 A Base current 18 A IBM Base peak current (tP < 5ms) 27 A PTOT Total dissipation at Tc = 25°C 200 W TSTG Storage temperature -55 to 150 °C 150 °C Value Unit 0.625 °C/W IC ICM IB TJ Table 3. Symbol RthJC 2/10 Max. operating junction temperature Thermal data Parameter Thermal resistance junction case______________Max HD1760JL 2 Electrical characteristics Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1700V VCE = 1700V___TC = 125°C 0.2 2 mA mA IEBO Emitter cut-off current (IC = 0) VEB = 5V 10 µA VCEO(sus)(1) Collector-emitter sustaining voltage (IB = 0) IC = 10mA 800 V VEBO Emitter-base voltage (IC = 0) IE = 10mA 10 V VCE(sat) (1) Collector-emitter saturation IC = 18A _____ voltage IB = 4.5A 2 V VBE(sat) (1) Base-emitter saturation voltage IC = 18A _____ IB = 4.5A 1.5 V DC current gain IC = 2A ____ IC = 18A ____ ts tf Inductive load Storage time Fall time IC = 12A _ __ fh = 32 KHz _IB(off) = -6.9A IB(on) = 1A VCE(fly) = 1340V VBE(off) = -2.7V LBB(on) = 0.8µH 2.6 300 µs ns ts tf Inductive load Storage time Fall time ___ fh = 100kHz IC = 8A IB(on) = 1.3A IB(off) = -5.8A VCE(fly) = 1300V VBE(off) = -2.7V LBB(on) = 0.25µH 2 110 µs ns hFE _ VCE = 5V VCE = 5V 30 5 8.5 1. Pulsed duration = 300 ms, duty cycle £1.5%. 3/10 Electrical characteristics 2.1 4/10 HD1760JL Electrical characteristics (curve) Figure 1. Safe operating area Figure 2. Derating curve Figure 3. Output characteristics Figure 4. Reverse biased SOA Figure 5. DC current gain Figure 6. DC current gain HD1760JL Electrical characteristics Figure 7. Collector-emitter saturation voltage Figure 8. Base-emitter saturation voltage Figure 9. Power losses Figure 10. Power losses Figure 11. Inductive load switching time Figure 12. Inductive load switching time 5/10 Test circuit 3 HD1760JL Test circuit Figure 13. Power losses and inductive load switching test circuit Figure 14. Reverse biased safe operating area test circuit 6/10 HD1760JL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data Table 5. TO-264 mechanical data Figure 15. TO-264 drawing 8/10 HD1760JL HD1760JL 5 Revision history Revision history Table 6. Revision history Date Revision Changes 17-Oct-2005 1 Initial release. 03-Nov-2005 2 hFE value has been changed on Table 4 14-Jun-2007 3 Complete version: new Section 2.1 inserted 9/10 HD1760JL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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