SGSD100 SGSD200 Complementary power Darlington transistors Features ■ Complementary NPN - PNP transistors ■ Monolithic Darlington configuration Applications ■ Audio power amplifier ■ DC-AC converter ■ Easy driver for low voltage DC motor ■ General purpose switching applications 3 2 1 TO-247 Description The SGSD100 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-247 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. Table 1. Internal schematic diagrams Device summary Order code Marking SGSD100 SGSD100 SGSD200 SGSD200 January 2008 . Figure 1. Rev 4 Package Packaging TO-247 Tube 1/10 www.st.com 10 SGSD100 SGSD200 Absolute maximun rating 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value NPN SGSD100 PNP SGSD200 Unit VCBO Collector-emitter voltage (IE = 0) 80 V VCEO Collector-emitter voltage (IB = 0) 80 V Collector current 25 A Collector peak current (tP < 5ms) 40 A Base current 6 A IBM Base peak current (tP < 5ms) 10 A PTOT Total dissipation at Tc ≤ 25°C 130 W Tstg Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ Note: Table 3. Symbol Rthj-case 2/10 Max. operating junction temperature For PNP type voltage and current values are negative Thermal data Parameter Thermal resistance junction-case max Value Unit 0.96 °C/W SGSD100 SGSD200 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions ICBO Collector cut-off current (IE = 0) VCE = 80 V ICEV Collector cut-off current (V BE = -0.3V) VCE = 80 V ICEO Collector cut-off current (IB = 0) IEBO Emitter cut-off current (IC = 0) Collector-emitter sustaining VCEO(sus)(1) voltage (I = 0) B VCE(sat)(1) VBE(sat)(1) VBE(1) hFE(1) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage DC current gain VCE = 80 V VCE = 80 V Max. Unit o T C = 100 C 0.5 1.5 mA mA oC 0.1 2 mA mA T C = 100 oC 0.5 1.5 mA mA 2 mA T C = 100 VCE = 60 V VEB = 5 V IC = 50 mA 80 V IC = 5 A IB = 20 mA 0.95 IC = 5 A 0.8 IC = 10 A IB = 20 mA TC = 100 oC IB = 40 mA IC = 10 A IB = 40 mA TC = 100 oC IC = 20 A IB = 80 mA IB = 80 mA TC = 100 IC = 20 A IB = 80 mA IC = 20 A IB = 80 mA TC = 100 IC = 10 A VCE = 3 V IC = 10 A VCE = 3 V IC = 5 A VCE = 3 V IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V IC = 20 A VCE = 3 V TC = 100 T C = 100 IF = 20 A TC = 100 V 3.5 V 2.6 2.5 3.3 V V 1 1.8 1.6 3 V V 600 5000 15000 oC TC = 100 oC V 8000 4000 12000 8000 300 oC V oC TC = 100 C IF = 20 A V 1.75 2.3 500 TC = 100 oC V oC o oC 1.2 1.3 TC = 100 oC IF = 10 A IF = 10 A 1.2 2 IC = 20 A IF = 5 A Diode forward voltage Typ. VCE = 60 V IF = 5 A VF(1) Min. 2000 6000 2000 1.2 V 0.85 V 1.6 V 1.4 V 2.3 V 1.3 V 3/10 SGSD100 SGSD200 Electrical characteristics Symbol Parameter Es/b Second breakdown energy Is/b Second breakdown current Test conditions VCC = 30 V L = 3 mH VCC = 30 V L = 3 mH T C = 100 oC VCE = 25 V t = 500 ms 1. Pulsed : Pulse duration = 300 µs, duty cycle ≤1.5% Note: 4/10 For PNP type voltage and current values are negative Min. Typ. Max. Unit 250 250 mJ 6 A mJ SGSD100 SGSD200 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. DC current gain (NPN type) Figure 4. DC current gain (PNP type) Figure 5. DC current gain (NPN type) Figure 6. DC current gain (PNP type) Figure 7. Collector-emitter saturation voltage (NPN type) 5/10 Electrical characteristics Figure 8. 6/10 Base-emitter saturation voltage (PNP type) SGSD100 SGSD200 SGSD100 SGSD200 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 SGSD100 SGSD200 Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 15.75 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 8/10 Typ 5.50 SGSD100 SGSD200 4 Revision history Revision history Table 5. Document revision history Date Revision 11-Oct-2003 3 24-Jan-2007 4 Changes Package change from TO-218 to TO-247. 9/10 SGSD100 SGSD200 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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