STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET Features Type VDSS RDS(on) ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W ■ Standard threshold drive ■ 100% avalanche tested 3 3 1 1 TO-220 DPAK 3 2 2 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application – Automotive Order codes Part number Marking Package Packaging STD95N4F3 95N4F3 DPAK Tape & reel STP95N4F3 95N4F3 TO-220 Tube STU95N4F3 95N4F3 IPAK Tube May 2007 Rev 2 1/14 www.st.com 14 Contents STD95N4F3 - STP95N4F3 - STU95N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STD95N4F3 - STP95N4F3 - STU95N4F3 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25°C 80 A ID Drain current (continuous) at TC = 100°C 65 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C 8 V/ns dv/dt (3) Peak diode recovery voltage slope EAS (4) Single pulse avalanche energy 400 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax 4. Starting Tj = 25°C, ID = 40A, VDD = 30V Table 2. Thermal resistance Value Symbol Parameter Unit TO-220 Rthj-case Rthj-a Thermal resistance junction-case max Thermal resistance junction-ambient max Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose IPAK DPAK 1.36 °C/W 62.5 100 -- °C/W -- -- 50 °C/W 300 275 -- °C 1. When mounted on 1inch² FR-4 2Oz Cu board 3/14 Electrical characteristics 2 STD95N4F3 - STP95N4F3 - STU95N4F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS Static Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 40 V VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 6.5 mΩ IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 2 5.4 Dynamic Parameter Test conditions Min Typ. Max. Unit Forward transconductance VDS =25V, ID=40A 100 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2200 580 40 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 80A VGS =10V (see Figure 13) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 Min. Typ. Max. Unit 40 11 8 54 nC nC nC STD95N4F3 - STP95N4F3 - STU95N4F3 Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD=20V, ID= 40A, RG=4.7Ω, VGS=10V (see Figure 15) VDD=20V, ID= 40A, RG=4.7Ω, VGS=10V (see Figure 15) Typ. Max. Unit 15 50 ns ns 40 15 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/µs, VDD=30V, Tj=150°C (see Figure 14) 45 60 2.8 Max. Unit 80 320 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/14 Electrical characteristics STD95N4F3 - STP95N4F3 - STU95N4F3 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature 6/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuit 3 STD95N4F3 - STP95N4F3 - STU95N4F3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/14 Figure 17. Switching time waveform STD95N4F3 - STP95N4F3 - STU95N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD95N4F3 - STP95N4F3 - STU95N4F3 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 Packaging mechanical data 5 STD95N4F3 - STP95N4F3 - STU95N4F3 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD95N4F3 - STP95N4F3 - STU95N4F3 6 Revision history Revision history Table 7. Revision history Date Revision Changes 22-Feb-2007 1 First release 15-May-2007 2 Changes on applications 13/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14