STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features Type VDSSS RDS(on) ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A ■ Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD12NF06T4 D12NF06 DPAK Tape & reel STD12NF06-1 D12NF06 IPAK Tube February 2007 Rev 5 1/14 www.st.com 14 Contents STD12NF06 - STD12NF06-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STD12NF06 - STD12NF06-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 60 V Drain-gate voltage (RGS = 20KΩ) 60 V ± 20 V Gate-source voltage ID Drain current (continuous) at TC = 25°C 12 A ID Drain current (continuous) at TC=100°C 8.5 A Drain current (pulsed) 48 A Total dissipation at TC = 25°C 30 W Derating factor 0.2 W/°C Peak diode recovery voltage slope 15 V/ns Single pulse avalanche energy 140 mJ -55 to 175 °C Value Unit 5 °C/W IDM (1) PTOT (2) dv/dt EAS (3) Tstg TJ Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤12A, di/dt ≤200A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX 3. Starting TJ = 25 oC, ID = 6A, VDD = 30V Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 275 °C 3/14 Electrical characteristics 2 STD12NF06 - STD12NF06-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 25mA, VGS = 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 6A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. Unit 60 V VDS = Max rating IDSS Table 4. Min. 1 10 µA µA ±100 nA 3 4 V 0.08 0.1 Ω Typ. Max. Unit VDS = Max rating, TC = 125°C 2 Dynamic Parameter Test conditions Forward transconductance VDS = 15V, ID = 6A Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 Total gate charge Gate-source charge Gate-drain charge Min. 5 S 315 70 30 pF pF pF 10 3.0 3.5 VDD = 48V, ID = 12A VGS = 10V 12 nC nC nC Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 30V, ID = 6A, RG = 4.7Ω, VGS = 10V Figure 13 on page 8 Min. Typ. 7 18 17 6 ns ns ns ns STD12NF06 - STD12NF06-1 Table 6. Symbol ISD ISDM VSD(1) trr Qrr IRRM Electrical characteristics Source drain diode Parameter Max Unit Source-drain current 12 A Source-drain current (pulsed) 48 A 1.3 V Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD = 12A, VGS = 0 ISD = 12A, di/dt = 100A/µs, VDD = 30V, TJ = 150°C Figure 15 on page 8 50 65 3.5 ns µC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/14 Electrical characteristics STD12NF06 - STD12NF06-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STD12NF06 - STD12NF06-1 Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage vs. temperature 7/14 Test circuit 3 STD12NF06 - STD12NF06-1 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 STD12NF06 - STD12NF06-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD12NF06 - STD12NF06-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 10/14 STD12NF06 - STD12NF06-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/14 Packaging mechanical data 5 STD12NF06 - STD12NF06-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12/14 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD12NF06 - STD12NF06-1 6 Revision history Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 3 Complete document 07-Aug-2006 4 The document has been reformatted 19-Feb-2007 5 Typo mistake on page 1 13/14 STD12NF06 - STD12NF06-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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