STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 3 3 2 1 1 IPAK DPAK 3 1 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description $4!"OR This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD150N3LLH6 150N3LLH6 DPAK Tape and reel STP150N3LLH6 150N3LLH6 TO-220 Tube STU150N3LLH6 150N3LLH6 IPAK Tube September 2009 Doc ID 15227 Rev 3 1/16 www.st.com 16 Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 8 Doc ID 15227 Rev 3 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 80 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C Single pulse avalanche energy 525 mJ -55 to 175 °C 175 °C Value Unit EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj Doc ID 15227 Rev 3 3/16 Electrical characteristics 2 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V Gate threshold voltage VDS = VGS, ID = 250 µA 1 VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A SMD version VGS = 4.5 V, ID = 40 A Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd RG 4/16 Unit V VDS = 30 V,Tc = 125 °C SMD version Static drain-source on resistance Max. 30 VGS = 10 V, ID = 40 A RDS(on) Typ. VDS = 30 V IDSS VGS(th) Min. 1 10 µA µA ±100 nA 2.5 V 0.0024 0.0028 Ω 0.0029 0.0033 Ω 0.0034 0.0045 Ω 0.0039 0.0049 Ω Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 Min Typ. Max. Unit - 4040 740 425 - pF pF pF - 40 16.3 15.8 - nC nC nC - 1.4 - Ω VDD = 15 V, ID = 80 A Total gate charge Gate-source charge Gate-drain charge VGS = 4.5 V Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain (see Figure 14) Doc ID 15227 Rev 3 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD Switching on/off (inductive load) Parameter RG = 4.7 Ω, VGS = 10 V Typ. Max. Unit - 17 18 - ns ns - 75 46 - ns ns Min. Typ. Max. Unit - 80 320 A A - 1.1 V VDD = 15 V, ID = 40 A, Turn-off delay time Fall time RG = 4.7 Ω, VGS = 10 V (see Figure 15) Source drain diode Parameter VSD(2) Forward on voltage IRRM Min. (see Figure 15) Source-drain current Source-drain current (pulsed) Qrr Test conditions VDD = 15 V, ID = 40 A, Turn-on delay time Rise time ISDM(1) trr Electrical characteristics Test conditions ISD = 40 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 17) - 34 35 2.1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15227 Rev 3 5/16 Electrical characteristics STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03997v1 ID (A) s ai e ar (on) his DS nt xR i on ma y ati er d b p e O it Lim 100 10 100µs 1ms 10ms Tj=150°C Tc=25°C 1 Sinlge pulse 0.1 0.1 Figure 4. ID (A) 350 10 1 VDS(V) Output characteristics AM03998v1 VGS=10V 300 300 AM03999v1 ID (A) VDS=1V 250 5V 250 200 4V 200 150 150 100 100 3V 50 50 0 0 Figure 6. 4 2 Normalized BVDSS vs temperature AM04903v1 BVDSS (norm) 0 0 VDS(V) 1.06 Figure 7. 2 4 6 8 10 VGS(V) Static drain-source on resistance AM04905v1 RDS(on) (Ω) 4.5 VGS=10V 4.0 ID=250µA 1.04 3.5 3.0 1.02 2.5 1.00 2.0 1.5 0.98 1.0 0.96 0.94 -50 6/16 0.5 0 50 100 150 TJ(°C) 0.0 0 Doc ID 15227 Rev 3 20 40 60 80 ID(A) STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM04000v1 VGS (V) VDD=15V 12 Capacitance variations AM00893v1 C (pF) f=1MHz ID=80A 6100 10 4600 8 6 Ciss 3100 4 1600 Coss 2 Crss 0 0 Figure 10. 40 20 60 80 100 Qg(nC) 100 0 5 15 10 20 25 VDS(V) Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature AM04901v1 VGS(th) (norm) ID=250µA 1.1 AM04902v1 RDS(on) (norm) 1.6 ID=40A VGS=10V 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 -50 0 50 150 TJ(°C) 100 0 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04906v1 VSD (V) TJ=-50°C 1.0 0.9 0.8 TJ=25°C 0.7 TJ=175°C 0.6 0.5 0.4 0 20 40 60 80 ISD(A) Doc ID 15227 Rev 3 7/16 Test circuit 3 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 Doc ID 15227 Rev 3 10% AM01473v1 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 15227 Rev 3 9/16 Package mechanical data 4 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 15227 Rev 3 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A min. typ max. 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 15227 Rev 3 11/16 Package mechanical data STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/16 Doc ID 15227 Rev 3 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 15227 Rev 3 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 13/16 Packaging mechanical data 5 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 14/16 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 0.059 0.065 0.073 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 15227 Rev 3 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 01-Dec-2008 1 First release 20-Jul-2009 2 – Document status promoted from preliminary data to datasheet – Added new package, mechanical data: TO-220 10-Sep-2009 3 Qgs and Qgd values have been modified on Table 5: Dynamic Doc ID 15227 Rev 3 15/16 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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