STMICROELECTRONICS STU95N2LH5

STD95N2LH5
STU95N2LH5
N-channel 25 V - 0.0038 Ω - 80 A - DPAK - IPAK
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STD95N2LH5
25 V
<0.0045 Ω
80 A
STU95N2LH5
25 V
<0.0049 Ω
80 A
3
3
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
2
1
1
DPAK
IPAK
Application
Switching applications
Figure 1.
Description
Internal schematic diagram
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD95N2LH5
95N2LH5
DPAK
Tape and reel
STU95N2LH5
95N2LH5
IPAK
Tube
February 2008
Rev 2
1/15
www.st.com
15
Contents
STD95N2LH5 - STU95N2LH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
................................................ 8
STD95N2LH5 - STU95N2LH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
25
V
± 20
V
VDS
Drain-source voltage (VGS=0)
VGS
Gate-Source voltage
ID (1)
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
67
A
IDM (2)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
70
W
Derating factor
0.47
W/°C
EAS (3)
Single pulse avalanche energy
165
mJ
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.14
°C/W
Rthj-amb
Thermal resistance junction-case max
100
°C/W
Maximum lead temperature for soldering purpose
275
°C
Tj
3/15
Electrical characteristics
2
STD95N2LH5 - STU95N2LH5
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
Static
Parameter
Drain-source breakdown
Voltage
Test conditions
ID = 250 µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
Gate threshold voltage
VDS= VGS, ID = 250 µA
VGS= 5 V, ID= 40 A
SMD version
VGS= 5 V, ID= 40 A
Table 5.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
RG
4/15
1
10
µA
µA
±100
nA
1
VGS= 10 V, ID= 40 A
Unit
V
VDS = 25 V,Tc = 125°C
SMD version
Static drain-source on
resistance
Max.
25
VGS= 10 V, ID= 40 A
RDS(on)
Typ.
VDS = 25 V
IDSS
VGS(th)
Min.
V
0.0038 0.0045
Ω
0.0044 0.0049
Ω
0.005
0.006
Ω
0.006
0.007
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
Total gate charge
Gate-source charge
Gate-drain charge
VGS =5 V
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
Gate input resistance
VDD=13 V, ID = 80 A
(see Figure 16)
VDD=13 V, ID = 80 A
(see Figure 19)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
Min
1817
420
67
pF
pF
pF
13.4
6.7
4.1
nC
nC
nC
3.5
nC
3.2
nC
1.1
Ω
STD95N2LH5 - STU95N2LH5
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISD
ISDM
(1)
VSD(2)
trr
Qrr
IRRM
Electrical characteristics
Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
VDD=12.5 V, ID= 40 A,
RG= 4.7 Ω, VGS= 10 V
(see Figure 15)
VDD=12.5 V, ID= 40 A,
RG= 4.7 Ω, VGS= 10 V
(see Figure 15)
Typ.
Max.
Unit
7
38
ns
ns
22
7
ns
ns
Source drain diode
Parameter
Test conditions
Min.
Typ.
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 35 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, VDD= 20 V
di/dt =100 A/µs,
(see Figure 17)
32.4
27.1
1.7
Max.
Unit
80
320
A
A
1.1
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/15
Electrical characteristics
STD95N2LH5 - STU95N2LH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
6/15
STD95N2LH5 - STU95N2LH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
7/15
Test circuit
3
STD95N2LH5 - STU95N2LH5
Test circuit
Figure 13. Unclamped inductive load test
circuit
Figure 14. Unclamped inductive waveform
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
Figure 18. Switching time waveform
switching and diode recovery times
8/15
STD95N2LH5 - STU95N2LH5
Test circuit
Figure 19. Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
9/15
Package mechanical data
4
STD95N2LH5 - STU95N2LH5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/15
STD95N2LH5 - STU95N2LH5
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
TYP
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
MAX.
MIN.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
6.6
0.252
5.1
6.4
0.260
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
1
0.023
0.2
0°
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.185
0.090
4.6
10.1
0.6
MAX.
0.200
4.7
2.28
4.4
9.35
1
TYP.
0.039
0.008
8°
0°
8°
0068772-F
11/15
Package mechanical data
STD95N2LH5 - STU95N2LH5
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
2.4
0.086
TYP.
MAX.
A
2.2
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.094
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
12/15
STD95N2LH5 - STU95N2LH5
5
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
inch
MAX.
MIN.
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
D
1.5
D1
1.5
E
1.65
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
A0
B1
inch
MAX.
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
R
40
W
15.7
0.075 0.082
1.574
16.3
0.618
0.641
13/15
Revision history
6
STD95N2LH5 - STU95N2LH5
Revision history
29-
Table 8.
14/15
Document revision history
Date
Revision
Changes
16-Oct-2007
1
First release
20-Feb-2008
2
Modified Table 4.: Static
STD95N2LH5 - STU95N2LH5
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15/15