1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123F B Features C A Fast switching device(T rr<4.0nS) Surface device type mounting D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Flat lead SOD-123 small outline plastic package A 1.5 1.7 0.059 0.067 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 3.3 3.7 0.130 0.146 C 0.5 0.7 0.020 0.028 High temperature soldering guaranteed: 260°C/10s D 2.5 2.7 0.098 0.106 Polarity : Indicated by cathode band E 0.8 1.0 0.031 0.039 Weight : 8.85±0.5 mg F 0.05 0.2 0.002 0.008 Ordering Information Part No. Package Packing 1NxxxxW RH SOD-123F 3Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units PD 400 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA Type Number Power Dissipation Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range IO 150 mA RθJA 450 °C/W TJ, TSTG -65 to + 150 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Symbol IR=100uA IR=5uA V(BR) Min Max 100 Units V 75 Forward Voltage 1N4448W, 1N914BW IF=5.0mA 1N4148W IF=10.0mA 1N4448W, 1N914BW IF=100.0mA Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) VR=20V VR=75V VR=0, f=1.0MHz VF 0.62 0.72 1.0 V 1.0 25 nA 5.0 μA CJ 4.0 pF Trr 4.0 ns IR Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: I F=10mA, IR=60mA, RL=100Ω, IRR=1mA Version : C09 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (A) 100 100 Reverse Current (uA) 10 1 Ta=25°C 0.1 Ta=25°C 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 Instantaneous Forward Volatge (V) 1.4 1.6 0.01 0 40 60 80 Reverse Volatge (V) 100 120 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 6 Junction Capacitance (pF) 500 Power Dissipation (mW) 20 400 300 200 100 0 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 Reverse Voltage (V) Ambient Temperature (°C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance (Ώ) 10000 1000 100 10 1 0 0 1 Forward Current (mA) 10 100 Version : C09