TSC TSC5327

Engineer Specification
TSC5327
High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
800V
BVCBO
1200V
IC
VCE(SAT)
Features
4A
3V @ IC / IB = 2.5A / 0.5A
Block Diagram
●
High Voltage
●
High Speed Switching
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TO-220
50pcs / Tube
TSC5327CZ C0
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
1200V
V
Collector-Emitter Voltage
VCEO
800V
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
Base Current
DC
IC
Pulse
DC
IB
Pulse
Total Power Dissipation
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: Single Pulse. PW = 300uS, Duty ≤2%
TSTG
1/4
4
10
2
5
50
A
A
W
+150
o
- 55 to +150
o
C
C
Version: Engineer Specification A
Engineer Specification
TSC5327
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
1200
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA, IE =0
BVCEO
800
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
7
--
--
V
Collector Cutoff Current
VCE =800V, IB=0
ICEO
--
--
10
uA
Collector Cutoff Current
VCB =1200V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 7V, IC =0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC=1.5A, IB =0.3A
VCE(SAT)1
---
--
0.6
V
Collector-Emitter Saturation Voltage
IC=2.5A, IB =0.5A
VCE(SAT)2
---
--
2.0
V
Base-Emitter Saturation Voltage
IC=1.5A, IB =0.3A
VBE(SAT)
--
--
1.5
V
20
--
40
10
--
--
5
--
--
VCE =5V, IC = 0.2A
DC Current Gain
VCE =5V, IC = 1A
hFE
VCE =5V, IC = 2.5A
Dynamic
Frequency
VCE =10V, IC =0.2A
fT
--
15
--
MHz
Output Capacitance
VCB =10V, f =1MHz
Cob
--
60
--
pF
1.4
2
uS
Resistive Load Switching Time (Ratings)
Rise Time
VCC =250V, IC =1.5A,
Storage Time
IB1=0.3, -IB2=-0.6A,
Fall Time
tP =25uS
tr
tSTG
--
3
5
uS
tf
--
0.2
0.4
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%
2/4
Version: Engineer Specification A
Engineer Specification
TSC5327
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
3/4
Version: Engineer Specification A
Engineer Specification
TSC5327
High Voltage NPN Transistor
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
4/4
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
6.350
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
Version: Engineer Specification A