Engineer Specification TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE(SAT) Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSC5327CZ C0 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 1200V V Collector-Emitter Voltage VCEO 800V V Emitter-Base Voltage VEBO 7 V Collector Current Base Current DC IC Pulse DC IB Pulse Total Power Dissipation PD Operating Junction Temperature TJ Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% TSTG 1/4 4 10 2 5 50 A A W +150 o - 55 to +150 o C C Version: Engineer Specification A Engineer Specification TSC5327 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 1200 -- -- V Collector-Emitter Breakdown Voltage IC =5mA, IE =0 BVCEO 800 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 7 -- -- V Collector Cutoff Current VCE =800V, IB=0 ICEO -- -- 10 uA Collector Cutoff Current VCB =1200V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 7V, IC =0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC=1.5A, IB =0.3A VCE(SAT)1 --- -- 0.6 V Collector-Emitter Saturation Voltage IC=2.5A, IB =0.5A VCE(SAT)2 --- -- 2.0 V Base-Emitter Saturation Voltage IC=1.5A, IB =0.3A VBE(SAT) -- -- 1.5 V 20 -- 40 10 -- -- 5 -- -- VCE =5V, IC = 0.2A DC Current Gain VCE =5V, IC = 1A hFE VCE =5V, IC = 2.5A Dynamic Frequency VCE =10V, IC =0.2A fT -- 15 -- MHz Output Capacitance VCB =10V, f =1MHz Cob -- 60 -- pF 1.4 2 uS Resistive Load Switching Time (Ratings) Rise Time VCC =250V, IC =1.5A, Storage Time IB1=0.3, -IB2=-0.6A, Fall Time tP =25uS tr tSTG -- 3 5 uS tf -- 0.2 0.4 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/4 Version: Engineer Specification A Engineer Specification TSC5327 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 3/4 Version: Engineer Specification A Engineer Specification TSC5327 High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 4/4 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: Engineer Specification A