TSC TSB772CK

TSB772
Low Vce(sat) PNP Transistor
TO-126
Pin assignment:
BVCEO = - 50V
Ic = - 3A
VCE (SAT), = - 0.5V(typ.) @Ic / Ib = - 2A / - 0.1A
TO-126
1. Emitter
2. Collector
3. Base
Features
Ordering Information
Low VCE (SAT).
Part No.
Excellent DC current gain characteristics
Packing
TSB772CK
Structure
Package
Bulk Pack
TO-126
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
- 50V
V
Collector-Emitter Voltage
VCEO
- 50V
V
Emitter-Base Voltage
VEBO
-6
V
-3
A
Collector Current
DC
IC
Pulse
Collector Power Dissipation
TO-126
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
- 7 (note 1)
PD
1.0
W
TJ
+150
o
TSTG
- 55 to +150
o
C
C
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = - 50uA, IE = 0
BVCBO
- 50
--
--
V
Collector-Emitter Breakdown Voltage
IC = - 1mA, IB = 0
BVCEO
- 50
--
--
V
Emitter-Base Breakdown Voltage
IE = - 50uA, IC = 0
BVEBO
-6
--
--
V
Collector Cutoff Current
VCB = - 40V, IE = 0
ICBO
--
--
-1
uA
Emitter Cutoff Current
VEB = - 4V, IC = 0
IEBO
--
--
-1
uA
Collector-Emitter Saturation Voltage
IC / IB = - 2.0A / - 0.2A
VCE(SAT)
--
- 0.3
- 0.5
V
DC Current Transfer Ratio
VCE = - 2V, IC = - 1A
hFE
160
--
350
Transition Frequency
VCE = - 5V, IC = - 100mA,
fT
--
80
--
MHz
55
--
pF
f = 100MHz
Output Capacitance
VCB = - 10V, f=1MHz
Cob
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSB772
1-1
2003/12 rev. B
Electrical Characteristics Curve
TSB772
2-2
2003/12 rev. B
TO-126 Mechanical Drawing
A
I
B
DIM
D
A
B
C
D
E
F
G
H
I
MIN
MAX
8.00 (typ)
4.20 (typ)
10.58
11.00
2.00 (typ)
12.00(typ)
2.50(typ)
0.74
0.78
0.8 (typ)
2.56
3.00
MIN
MAX
0.315(typ)
0.165 (typ)
0.417
0.433
0.079 (typ)
0.472(typ)
0.098 (typ)
0.029
0.031
0.031(typ)
0.101
0.118
J
K
0.38
0.50
1.1 (typ)
0.015
0.020
0.043 (typ)
C
H
1mm
E
G
F
TO-126 DIMENSION
MILLIMETERS
INCHES
J
K
TSB772
3-3
2003/12 rev. B