TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ● Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk TSM2N7000KCT A3 TO-92 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous @ TA=25ºC ID 300 Pulsed IDM 700 Continuous @ TA=25ºC IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 Operating Junction Temperature TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Unit TL 10 S RӨJA 357 ºC/W Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA mW Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. 1/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.0 -- 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 uA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1.0 uA Drain-Source On-State Resistance VGS = 10V, ID = 100mA VGS = 5V, ID = 100mA RDS(ON) -- 3 5 -- 3.6 5.5 Ω Forward Transconductance VDS = 10V, ID = 200mA gfs 100 -- -- mS Diode Forward Voltage IS = 300mA, VGS = 0V VSD -- 0.9 1.2 V Qg -- 0.4 -- nC Ciss -- 7.32 -- Coss -- 3.42 -- Crss -- 7.63 -- td(on) -- 25 -- ID = 100mA, VGEN = 10V, Turn-Off Delay Time td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. -- 35 -- Dynamic b Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 250mA, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0MHz pF c Turn-On Delay Time VDD = 30V, RG = 10Ω 2/5 nS Version: A09 TSM2N7000K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Forward Transfer Admittance vs. Drain Current On-Resistance vs. Gate-Source Voltage Power Derating Curve 3/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H 4/5 TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Version: A09 TSM2N7000K 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A09