TSC TSM5NS50CP

TSM2N7002
60V N-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
Pin Definition:
1. Gate
2. Source
3. Drain
60
Features
ID (mA)
7.5 @ VGS = 10V
300
7.5 @ VGS = 4.5V
200
Block Diagram
●
Fast Switching Speed
●
Low Input and Output Leakage
Application
●
Direct Logic-Level Interface: TTL/CMOS
●
Solid-State Relays
Ordering Information
Part No.
Package
Packing
TSM2N7002CX RF
SOT-23
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
300
mA
IDM
800
mA
IS
300
mA
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
220
mW
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
Unit
TL
5
S
RӨJA
357
TJ
Operating Junction and Storage Temperature Range
350
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
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Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 10µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.0
--
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
1.0
µA
--
--
7.5
--
--
7.5
Drain-Source On-State Resistance
VGS = 10V, ID = 300mA
VGS = 4.5V, ID = 200mA
RDS(ON)
Ω
Forward Transconductance
VDS = 15V, ID = 300mA
gfs
--
320
--
mS
Diode Forward Voltage
IS = 300mA, VGS = 0V
VSD
--
0.9
1.2
V
Qg
--
0.4
0.6
Qgs
--
0.06
--
Qgd
--
0.06
--
Ciss
--
50
--
Coss
--
25
--
Crss
--
5
--
td(on)
--
7.5
20
tr
--
6
--
td(off)
--
7.5
20
--
3
--
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V, ID = 250mA,
VGS = 4.5V
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 30V,
ID = 100mA, VGEN = 10V,
RG = 10Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
2N = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: A07
TSM2N7002
60V N-Channel MOSFET
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: A07