TSM10N06 60V N-Channel MOSFET TO-252 (DPAK) PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM10N06CP RO TO-252 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 10 A IDM 50 A IS 10 A PDTOT 45 Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Total Power Dissipation @ TC=25C Operating Junction Temperature +150 TJ, TSTG - 55 to +150 o Symbol Limit TJ Operating Junction and Storage Temperature Range W o C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. 1/6 RӨJA Unit 2.78 o 50 o C/W C/W Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 -- 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 2 µA -- -- 65 RDS(ON) -- -- 80 -- -- 110 VGS = 10V, ID = 10A Drain-Source On-State Resistance VGS = 5V, ID = 10A VGS = 4V, ID = 9A mΩ Forward Transconductance VDS = 25V, ID = 6A gfs -- 13 -- S Diode Forward Voltage 2 Dynamic IS = 2A, VGS = 0V VSD -- 0.9 1.2 V Qg -- 10.5 16 Qgs -- 3.5 -- Qgd -- 4.2 -- Ciss -- 1100 -- Coss -- 90 -- Crss -- 55 -- td(on) -- 10 15 tr -- 15 25 td(off) -- 25 40 -- 10 15 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 30V, ID = 9A, VGS = 4.5V VDS = 30V, VGS = 0V, f = 1.0MHz nC pF 2,3 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 30V, RL = 5.4Ω, ID = 9A, VGEN = 10V, RG = 1Ω Turn-Off Fall Time tf Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2% Notes 2: For DESIGN AID ONLY, not subject to production testing. Notes 3: Switching time is essentially independent of operating temperature. 2/6 nS Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area 4/6 Version: A10 TSM10N06 60V N-Channel MOSFET TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.61 0.78 0.024 0.030 0.51 0.71 0.020 0.028 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 5/6 Version: A10 TSM10N06 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A10