TSC TSM10N06CPRO

TSM10N06
60V N-Channel MOSFET
TO-252
(DPAK)
PRODUCT SUMMARY
VDS (V)
RDSON (mΩ)
Pin Definition:
1. Gate
2. Drain
3. Source
60
Features
ID (A)
65 @ VGS = 10V
10
80 @ VGS = 5V
10
110 @ VGS = 4V
9
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM10N06CP RO
TO-252
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
10
A
IDM
50
A
IS
10
A
PDTOT
45
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Total Power Dissipation @ TC=25C
Operating Junction Temperature
+150
TJ, TSTG
- 55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
W
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/6
RӨJA
Unit
2.78
o
50
o
C/W
C/W
Version: A10
TSM10N06
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
--
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
2
µA
--
--
65
RDS(ON)
--
--
80
--
--
110
VGS = 10V, ID = 10A
Drain-Source On-State Resistance
VGS = 5V, ID = 10A
VGS = 4V, ID = 9A
mΩ
Forward Transconductance
VDS = 25V, ID = 6A
gfs
--
13
--
S
Diode Forward Voltage
2
Dynamic
IS = 2A, VGS = 0V
VSD
--
0.9
1.2
V
Qg
--
10.5
16
Qgs
--
3.5
--
Qgd
--
4.2
--
Ciss
--
1100
--
Coss
--
90
--
Crss
--
55
--
td(on)
--
10
15
tr
--
15
25
td(off)
--
25
40
--
10
15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 30V, ID = 9A,
VGS = 4.5V
VDS = 30V, VGS = 0V,
f = 1.0MHz
nC
pF
2,3
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 30V, RL = 5.4Ω,
ID = 9A, VGEN = 10V,
RG = 1Ω
Turn-Off Fall Time
tf
Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: For DESIGN AID ONLY, not subject to production testing.
Notes 3: Switching time is essentially independent of operating temperature.
2/6
nS
Version: A10
TSM10N06
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A10
TSM10N06
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
4/6
Version: A10
TSM10N06
60V N-Channel MOSFET
TO-252 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.3BSC
0.09BSC
4.6BSC
0.18BSC
6.80
7.20
0.268
0.283
5.40
5.60
0.213
0.220
6.40
6.65
0.252
0.262
2.20
2.40
0.087
0.094
0.00
0.20
0.000
0.008
5.20
5.40
0.205
0.213
0.61
0.78
0.024
0.030
0.51
0.71
0.020
0.028
0.35
0.65
0.014
0.026
0.90
1.50
0.035
0.059
2.20
2.80
0.087
0.110
0.50
1.10
0.020
0.043
0.90
1.50
0.035
0.059
1.30
1.70
0.051
0.67
Marking Diagram
Y
M
L
= Year Code
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Lot Code
5/6
Version: A10
TSM10N06
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: A10