APM4548K Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features • N-Channel 30V/7A, RDS(ON) = 18mΩ (typ.) @ VGS = 10V RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -30V/-6A, RDS(ON) = 32mΩ (typ.) @ VGS =-10V RDS(ON) = 42mΩ (typ.) @ VGS =-4.5V • • • (8) D1 Super High Dense Cell Design Reliable and Rugged (4) G2 Lead Free Available (RoHS Compliant) (2) G1 Applications • (3) S2 (7) D1 Power Management in Notebook Computer, S1 (1) Portable Equipment and Battery Powered D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Systems Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4548 Lead Free Code Handling Code Temp. Range Package Code APM4548 K : APM4548 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 1 www.anpec.com.tw APM4548K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 7 -6 30 -20 1.2 -1 ID* Continuous Drain Current IDM* Pulsed Drain Current I S* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* VGS=10V (N) VGS=-10V (P) Unit V A A 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: 2 *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4548K Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA N-Ch 30 VGS=0V, IDS=-250µA P-Ch -30 VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) a Gate Leakage Current Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 V 1 N-Ch 30 -1 P-Ch -30 VDS=VGS, IDS=250µA N-Ch 1 1.5 2 VDS=VGS, IDS=-250µA P-Ch -1 -1.5 -2 VGS=±20V, VDS=0V N-Ch ±100 P-Ch ±100 VGS=10V, IDS=7A N-Ch 18 24 VGS=-10V, IDS=-6A P-Ch 32 42 VGS=4.5V, IDS=5A N-Ch 23 30 VGS=-4.5V, IDS=-5A P-Ch 42 55 2 µA V nA mΩ www.anpec.com.tw APM4548K Electrical Characteristics (Cont.) Symbol Parameter (T A = 25°C unless otherwise noted) APM4548K Test Condition Min. Typ. Max. Unit Diode Characteristics VSD a Diode Forward Voltage ISD =2A, V GS=0V N-Ch 0.8 1.3 ISD =-2.3A, V GS=0V P-Ch -0.8 -1.3 N-Ch 2.5 P-Ch 11 N-Ch 960 P-Ch 980 N-Ch 180 P-Ch 155 N-Ch 100 P-Ch 120 N-Ch 7 14 P-Ch 7 14 N-Ch 9 17 P-Ch 10 20 N-Ch 34 62 P-Ch 38 70 N-Ch 12 23 P-Ch 14 26 N-Ch 5 P-Ch 3 N-Ch 19 25 P-Ch 24 30 N-Ch 2 P-Ch 2 N-Ch 3.6 P-Ch 3.7 V Dynamic Characteristics b RG Gate Resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time V GS=0V,V DS=0V,F=1MHz N-Channel V GS=0V, V DS=15V, Frequency=1.0MHz P-Channel V GS=0V, V DS=-15V, Frequency=1.0MHz N-Channel V DD=15V, R L=15Ω, IDS =1A, V GEN =10V, R G =6Ω P-Channel V DD=-15V, R L=15Ω, IDS =-1A, V GEN =-10V, R G =6Ω Tf Turn-off Fall Time Q rr N-Channel ISD =7A, dISD /dt =100A/µs Reverse Recovery Charge P-Channel ISD =-6A, dISD /dt =100A/µs Ω pF ns nC Gate Charge Characteristics b Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge N-Channel V DS=15V, VGS=10V, IDS =7A P-Channel V DS=-15V, VGS=-10V, IDS =-6A nC Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 3 www.anpec.com.tw APM4548K Typical Characteristics N-Channel Drain Current Power Dissipation 8 2.5 7 ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 6 5 4 3 2 0.5 1 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10 TA=25 C,VG=10V 1ms 10ms 1 100ms 1s 0.1 DC O T =25 C 0.01 A 0.01 0.1 1 10 Rev. B.1 - Sep., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4548K Typical Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 30 40 VGS= 4, 5, 6, 7, 8, 9, 10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 25 20 15 3V 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 25 20 VGS=10V 15 10 5 3.0 0 5 10 15 20 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 Normalized Threshold Voltage 20 15 o Tj=125 C 10 o Tj=-55 C o Tj=25 C 5 0 25 VDS - Drain-Source Voltage (V) 25 ID - Drain Current (A) VGS=4.5V 30 2V 30 0 35 1 2 3 4 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 5 30 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4548K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.8 30 1.6 IDS = 7A 10 o 1.4 IS - Source Current (A) Normalized On Resistance VGS = 10V 1.2 1.0 0.8 Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 18mΩ 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 1500 Frequency=1MHz VDS= 15V VGS - Gate - source Voltage (V) ID= 7A C - Capacitance (pF) 1200 Ciss 900 600 300 0 Coss Crss 8 6 4 2 0 0 5 10 15 20 25 Rev. B.1 - Sep., 2005 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 6 www.anpec.com.tw APM4548K Typical Characteristics (Cont.) P-Channel Power Dissipation Drain Current 7 2.5 6 5 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 4 3 2 0.5 1 o o 0.0 TA=25 C 0 20 40 0 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10 TA=25 C,VG=-10V 300us 1ms 1 10ms 100ms 1s 0.1 DC O T =25 C 0.01 A 0.01 0.1 1 10 Rev. B.1 - Sep., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4548K Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 20 80 18 VGS= -4,-5,-6,-7,-8,-9,-10V RDS(ON) - On - Resistance (mΩ) 70 -ID - Drain Current (A) 16 14 12 10 8 -3V 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 40 VGS= -10V 30 20 10 0 4 8 12 16 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 18 20 IDS = -250µA Normalized Threshold Voltage 1.4 16 -ID - Drain Current (A) VGS= -4.5V 50 0 3.0 20 14 12 10 8 o Tj=125 C 6 o Tj=-55 C 4 o Tj=25 C 2 0 60 0 1 2 3 4 Rev. B.1 - Sep., 2005 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 5 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM4548K Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Drain-Source On Resistance 20 1.8 VGS = -10V IDS = -6A 10 o Tj=150 C 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 0.2 o RON@Tj=25 C: 32mΩ 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1400 10 Frequency=1MHz VDS= -15V -VGS - Gate - source Voltage (V) C - Capacitance (pF) 1200 Ciss 1000 800 600 400 Coss 200 ID= -6A 8 6 4 2 Crss 0 0 0 4 8 12 16 20 Rev. B.1 - Sep., 2005 5 10 15 20 25 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 9 www.anpec.com.tw APM4548K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Millimeters Inches Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ1 8° 8° Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 10 www.anpec.com.tw APM4548K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 11 www.anpec.com.tw APM4548K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 D1 12 Ko www.anpec.com.tw APM4548K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 Carrier Width 12 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 P 8± 0.1 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 13 www.anpec.com.tw