APM4427K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4A, D RDS(ON) = 85mΩ(typ.) @ VGS = -10V RDS(ON) = 140mΩ(typ.) @ VGS = -4.5V • • • • D D D S Super High Density Cell Design S S Reliable and Rugged G Top View of SOP − 8 SOP-8 Package ( 1, 2, 3 ) S S S Lead Free Available (RoHS Compliant) Applications • (4) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems DDDD (5,6,7,8) P-Channel MOSFET Ordering and Marking Information Package Code K : SO P-8 O perating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4427 Lead Free Code Handling Code Tem p. Range Package Code APM4427 K : APM4427 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4427K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID* Continuous Drain Current IDM* IS* Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V -4 VGS=-10V A -16 A -2 150 °C -55 to 150 TA=25°C TA=100°C Thermal Resistance-Junction to Ambient 2 0.8 W 62.5 °C/W Note: 2 *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=-250µA Typ. Gate Leakage Current VGS=±20V, VDS=0V Max. -30 -1 -30 -1 Unit V TJ=85°C VDS=VGS, IDS=-250µA Diode Forward Voltage Min. VDS=-24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4427K -1.5 µA -2 V ±100 nA VGS=-10V, IDS=-4A 85 115 VGS=-4.5V, IDS=-2.3A 140 180 ISD=-1.25A, VGS=0V -0.7 -1.3 VGS=0V,VDS=0V,F=1MHz 13.5 VGS=0V, VDS=-25V, Frequency=1.0MHz 550 mΩ V b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Ω pF 120 80 10 20 10 25 25 55 5 15 ns www.anpec.com.tw APM4427K Electrical Characteristics (Cont.) Symbol Parameter Gate Charge Characteristics Qg Total Gate Charge Test Condition APM4427K Min. Typ. Max. 12.3 16 Unit b Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: (TA = 25°C unless otherwise noted) VDS=-15V, VGS=-10V, IDS=-4A 3.5 nC 1.1 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4427K Typical Characteristics Drain Current 2.5 5 2.0 4 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 0.5 3 2 1 o TA=25 C,VG=-10V o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 s Rd ( )L on im Normalized Transient Thermal Resistance 50 -ID - Drain Current (A) 0 it 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4427K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 240 16 VGS= -6,-7,-8,-9,-10V 210 -5V 12 10 8 -4V 6 4 2 0 -3V 0 1 2 3 4 5 6 7 8 9 120 VGS= -10V 90 60 30 6 8 10 12 14 Gate Threshold Voltage 1.4 10 8 o Tj=125 C o Tj=-55 C o Tj=25 C 2 0 4 Transfer Characteristics 14 0 2 -ID - Drain Current (A) 1.6 4 0 -VDS - Drain - Source Voltage (V) 12 -ID - Drain Current (A) 150 16 6 VGS= -4.5V 180 0 10 Normalized Threshold Voltage -ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ) 14 1 2 3 4 5 6 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 IDS = -250µA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 7 16 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4427K Typical Characteristics (Cont.) Drain-Source On Resistance 1.6 Source-Drain Diode Forward 20 IDS = -250µA 10 1.2 o -IS - Source Current (A) Normalized On Resistance 1.4 1.0 0.8 0.6 0.4 Tj=150 C o Tj=25 C 1 0.2 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 1.2 1.4 1.6 Gate Charge 10 VDS= -15V 9 I = -4A D -VGS - Gate - source Voltage (V) 600 C - Capacitance (pF) 1.0 Capacitance Frequency=1MHz Ciss 500 400 300 200 Coss Crss 0 0.8 -VSD - Source - Drain Voltage (V) 700 0 0.6 Tj - Junction Temperature (°C) 800 100 0.2 0.4 5 10 15 20 25 7 6 5 4 3 2 1 0 30 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 6 www.anpec.com.tw APM4427K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A A1 D E Min. 1. 35 0. 10 4. 80 3. 80 Max . 1. 75 0. 25 5. 00 4. 00 Min. 0. 053 0. 004 0. 189 0. 150 Max . 0. 069 0. 010 0. 197 0. 157 H L e1 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 e2 1. 27B S C 0. 50B S C φ 1 8° 8° Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM4427K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM4427K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM4427K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 .3±0.013 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw