BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA UNITS V V 32 32 5.0 100 350 V mA mW -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICES ICES BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) Cob NF ton ton hFE hFE hFE hfe TEST CONDITIONS MIN VCE=32V VCE=32V, TA=150°C IC=2.0mA 32 IE=1.0µA 5.0 IC=10mA, IB=250µA IC=50mA, IB=1.25mA IC=10mA, IB=250µA 0.60 IC=50mA, IB=1.25mA 0.68 VCE=5.0V, IC=2.0mA 0.60 VCB=10V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCE=5.0V, VCE=5.0V, VCE=1.0V, VCE=5.0V, IC=10µA IC=2.0mA IC=50mA IC=2.0mA, f=1.0kHz BCW61B MIN MAX 30 140 310 80 175 350 MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800 BCW61C MIN MAX 40 250 460 100 250 500 UNITS nA µA V V V V V V V pF ns ns BCW61D MIN MAX 100 380 630 100 350 700 R1 (20-February 2003) Central TM BCW61B BCW61C BCW61D Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD R1 (20-February 2003)