PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES UES1001 thru UES1003 UF4001 thru UF4007 CMR1U-01 Series CMR1U-01M Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) Central Semiconductor Corp. CPD16 PROCESS TM Typical Electrical Characteristics 100000 10000 T A = 125°C 1000 T A = 75°C 100 T A = 25°C 10 1 0.1 0 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com 200 400 600 800 1000 R2 (19-September 2003)