PROCESS CPD24 Fast Recovery Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 11 MILS Anode Bonding Pad Area 35 x 35 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES 1N4933 thru 1N4937 1N4942 thru 1N4948 1N5615 thru 1N5623 CMR1F-02M Series BACKSIDE CATHODE R1 R3 (29-April 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD24 Typical Electrical Characteristics R3 (29-April 2010) w w w. c e n t r a l s e m i . c o m